Described herein is a technique capable of selectively forming a thin film on a substrate while suppressing damage to other films of the substrate. According to the technique, there is provided a method of manufacturing a semiconductor device, including: (a) removing a natural oxide film from a surface of a substrate by supplying a first inorganic material to the substrate wherein a first film and a second film different from the first film are exposed on the surface of the substrate; (b) forming an oxide film by oxidizing a surface of the first film by supplying an oxidizing agent to the substrate; (c) modifying the surface of the first film by supplying a second inorganic material to the substrate; and (d) selectively growing a thin film on a surface of the second film by supplying a deposition gas to the substrate, wherein (a) through (d) are sequentially performed.

An apparatus for growing semiconductor wafers, in particular of silicon carbide, wherein a chamber houses a collection container and a support or susceptor arranged over the container. The support is formed by a frame surrounding an opening accommodating a plurality of arms and a seat. The frame has a first a second surface, opposite to each other, with the first surface of the frame facing the support. The arms are formed by cantilever bars extending from the frame into the opening, having a maximum height smaller than the frame, and having at the top a resting edge. The resting edges of the arms define a resting surface that is at a lower level than the second surface of the frame. The seat has a bottom formed by the resting surface.

A reactor system and related methods are provided which may include a heating element in a wafer tray. The heating element may be used to heat the wafer tray and a substrate or wafer seated on the wafer tray within a reaction chamber assembly, and may be used to cause sublimation of a native oxide of the wafer.

The present invention relates to a new process for manufacturing a silicon carbide (SiC) coated body by depositing SiC in a chemical vapor deposition method using dimethyldichlorosilane (DMS) as the silane source on a graphite substrate. A further aspect of the present invention relates to the new silicon carbide coated body, which can be obtained by the new process of the present invention, and to the use thereof for manufacturing articles for high temperature applications, susceptors and reactors, semiconductor materials, and wafer.

The present invention discloses a two-dimensional AlN material and its preparation method and application, wherein the preparation method comprises the following steps: (1) selecting a substrate and its crystal orientation; (2) cleaning the surface of the substrate; (3) transferring a graphene layer to the substrate layer; (4) annealing the substrate; (5) using the MOCVD process to introduce H.sub.2 to open the graphene layer and passivate the surface of the substrate; and (6) using the MOCVD process to grow a two-dimensional AlN layer. The preparation method of the present invention has the advantages that the process is simple, time saving and efficient. Besides, the two-dimensional AlN material prepared by the present invention can be widely used in HEMT devices, deep ultraviolet detectors or deep ultraviolet LEDs, and other fields.

There is provided a technique that includes: forming an initial oxide layer on a surface of a substrate by performing a set m times (where m is an integer equal to or greater than 1), the set including non-simultaneously performing: (a) oxidizing the surface of the substrate under a condition that an oxidation amount of the substrate increases from an upstream side to a downstream side of a gas flow by supplying an oxygen-containing gas and a hydrogen-containing gas to the substrate; and (b) oxidizing the surface of the substrate under a condition that the oxidation amount of the substrate decreases from the upstream side to the downstream side of the gas flow by supplying the oxygen-containing gas and the hydrogen-containing gas to the substrate; and forming a film on the initial oxide layer by supplying a precursor gas to the substrate.

A method of forming a metal oxide is disclosed herein. The methods are performed by atomic layer deposition without the use of plasma. The methods utilize a heated substrate exposed to a co-flow of H.sub.2 and O.sub.2 to form radical species which react with metal precursors to form metal oxides.

Disclosed herein are structures comprising a titanium, zirconium, or hafnium powder particle with titanium carbide, zirconium carbide, or hafnium carbide (respectively) nano-whiskers grown directly from and anchored to the powder particle. Also disclosed are methods for fabrication of such structures, involving heating the powder particles and exposing the particles to an organic gas.

A coated cutting tool comprising a substrate and a coating layer formed on a surface of the substrate, wherein the coating layer includes a predetermined lower layer, an intermediate layer comprising -Al.sub.2O.sub.3, and an upper layer comprising TiCN; the lower layer, intermediate layer, and upper layer have predetermined average thicknesses; a condition represented by formula (1) [RSA40 (1)] is satisfied; the interface of the intermediate layer on the upper layer side has a kurtosis roughness (S.sub.ku) of more than 3.0; the interface of the intermediate layer on the upper layer side has a skewness roughness (S.sub.sk) of less than 0; and a condition represented by formula (2) [RSB40 (2)] is satisfied.

The present invention relates to a new process for manufacturing a silicon carbide (SiC) coated body by depositing SiC in a chemical vapor deposition method using dimethyldichlorosilane (DMS) as the silane source on a graphite substrate. A further aspect of the present invention relates to the new silicon carbide coated body, which can be obtained by the new process of the present invention, and to the use thereof for manufacturing articles for high temperature applications, susceptors and reactors, semiconductor materials, and wafer.