A method of fabricating semi-polar gallium nitride includes providing a silicon-on-insulator (SOI) substrate. The SOI substrate includes a substrate, a silicon oxide layer and a silicon substrate. The silicon substrate has (1,0,0) facets. The silicon oxide layer is disposed between the substrate and the silicon substrate. Later, a vapor etching process is performed to etch the (1,0,0) facets to form (1,1,1) facets. The vapor etching process is performed by disposing a nebulizer under the SOI substrate. The top surface of the silicon substrate faces the nebulizer. Later, the nebulizer turns etchant into mist to etch the (1,0,0) facets by the mist to form (1,1,1) facets. Finally, an epitaxial process is performed to grow a semi-polar gallium nitride layer on the (1,1,1) facets.

Provided is a method of manufacturing a silicon carbide epitaxial wafer appropriate for suppressing an occurrence of a triangular defect. A method of manufacturing a silicon carbide epitaxial wafer includes: an etching process of etching a surface of a silicon carbide substrate at a first temperature using etching gas including H.sub.2; a process of flattening processing of flattening the surface etched in the etching process, at a second temperature using gas including H.sub.2 gas, first Si supply gas, and first C supply gas; and an epitaxial layer growth process of performing an epitaxial growth on the surface flattened in the process of flattening processing, at a third temperature using gas including second Si supply gas and second C supply gas, wherein the first temperature T.sub.1, the second temperature T.sub.2, and the third temperature T.sub.3 satisfy T.sub.1>T.sub.2>T.sub.3.

Disclosed are apparatuses and methods for providing a substrate onto a substrate support in a processing chamber, generating an inert plasma in the processing chamber, and maintaining the inert plasma to heat the substrate to a steady state temperature, suitable for conducting plasma-enhanced chemical vapor deposition (PECVD), in less than 30 seconds from providing the substrate onto the substrate support. An apparatus may include a processing chamber, a process station that includes a substrate support, a process gas unit configured to flow an inert gas onto a substrate supported by the substrate support, a plasma source configured to generate an inert plasma in the process station, and a controller with instructions configured to flow the inert gas onto the substrate, generate the inert plasma in the first process station, and maintain the inert plasma to thereby heat the substrate.

In a substrate processing method, a cleaning process is performed at a first temperature to remove a portion of a cumulative layer that is deposited within a chamber by deposition processes (step 1). The deposition processes are performed at the first temperature on a plurality of substrates within the chamber respectively (step 2). The step 1 and the step 2 are performed alternately and repeatedly.

Disclosed herein is a system and method for transistor pathogen virus detector in which one embodiment may include a substrate layer, a silicon dioxide layer on the substrate layer, a nanocrystalline diamond layer on the silicon dioxide layer, a graphene oxide layer on the nanocrystalline diamond layer, fluorinated graphene oxide portions; and a linker layer, the linker layer including a plurality of pathogen receptors.

A transparent wear-resistant film layer, a plastic substrate modification method, and a product are provided, the plastic substrate modification method includes the following steps: bombarding with at least one plastic substrate positioned in a chamber of a PECVD coating device with plasma to clean and activate the at least one plastic substrate, and forming a transparent wear-resistant film layer on the at least one surface of the activated plastic substrate by a plasma enhanced chemical vapor deposition using a siloxane monomer as a reaction raw material.

A processing chamber such as a plasma etch chamber can perform deposition and etch operations, where byproducts of the deposition and etch operations can build up in a vacuum pump system fluidly coupled to the processing chamber. A vacuum pump system may have multiple roughing pumps so that etch gases can be diverted a roughing pump and deposition precursors can be diverted to another roughing pump. A divert line may route unused deposition precursors through a separate roughing pump. Deposition byproducts can be prevented from forming by incorporating one or more gas ejectors or venturi pumps at an outlet of a primary pump in a vacuum pump system. Cleaning operations, such as waferless automated cleaning operations, using certain clean chemistries may remove deposition byproducts before or after etch operations.

Methods are provided for selective film deposition. One method includes providing a substrate containing a dielectric material and a metal layer, the metal layer having an oxidized metal layer thereon, coating the substrate with a metal-containing catalyst layer, treating the substrate with an alcohol solution that removes the oxidized metal layer from the metal layer along with the metal-containing catalyst layer on the oxidized metal layer, and exposing the substrate to a process gas containing a silanol gas for a time period that selectively deposits a SiO.sub.2 film on the metal-containing catalyst layer on the dielectric material.

There is provided a technique that includes: (a) forming a film formation suppression layer on a surface of a first material of a concave portion of the substrate, by supplying a precursor to the substrate provided with the concave portion on a surface of the substrate to adsorb at least a portion of a molecular structure of molecules constituting the precursor on the surface of the first material of the concave portion, the concave portion having a top surface and a side surface composed of the first material containing a first element and a bottom surface composed of a second material containing a second element; and (b) growing a film on a surface of the second material of the concave portion by supplying a film-forming material to the substrate having the film formation suppression layer formed on the surface of the first material.

The present invention provides various passive electronic components comprising a layer of coated particles, and methods for producing and using the same. Some of the passive electronic components of the invention include, but are not limited to conductors, resistors, current collectors, capacitors, piezoelectronic devices, inductors and transformers. The present invention also provides energy storage devices and electrode layers for such energy storage devices having passive, electrically-conductive particles coated with one or more thin film materials.