One embodiment of the disclosure provides a method of fabricating a chamber component with a coating layer disposed on an interface layer with desired film properties. In one embodiment, a method of fabricating a coating material includes providing a base structure comprising an aluminum or silicon containing material, forming an interface layer on the base structure, wherein the interface layer comprises one or more elements from at least one of Ta, Al, Si, Mg, Y, or combinations thereof, and forming a coating layer on the interface layer, wherein the coating layer has a molecular structure of Si.sub.vY.sub.wMg.sub.xAl.sub.yO.sub.z. In another embodiment, a chamber component includes an interface layer disposed on a base structure, wherein the interface layer is selected from at least one of Ta, Al, Si, Mg, Y, or combinations thereof, and a coating layer disposed on the interface layer, wherein the coating layer has a molecular structure of Si.sub.vY.sub.wMg.sub.xAl.sub.yO.sub.z.

Disclosed are rare earth metal containing silicate coatings, coated articles (e.g., heaters and susceptors) or bodies of articles and methods of coating such articles with a rare earth metal containing silicate coating.

A method of forming a plurality of diamonds provides a base, epitaxially forms a first sacrificial layer on the base, and then epitaxially forms a first diamond layer on the first sacrificial layer. The first sacrificial layer has a first material composition, and the first diamond layer is a material that is different from the first material composition. The method then epitaxially forms a second sacrificial layer on the first diamond layer, and epitaxially forms a second diamond layer on the second sacrificial layer. The second sacrificial layer has the first material composition. The base, first and second sacrificial layers, and first and second diamond layers form a heteroepitaxial super-lattice.

The present application discloses a manufacturing method for a graphene film, a porous silica powder and a transparent conductive layer. The manufacturing method for a graphene film includes steps of: providing a porous material powder; placing the porous material powder in an atomic layer deposition device; forming a porous material template having a metal catalyst layer in pores; and preparing the graphene film on the porous material template.

A method of manufacturing a semiconductor device includes: forming an amorphous metal film on a substrate by time-divisionally conducting a cycle a predetermined number of times, the cycle including: (a) simultaneously supplying a metal-containing gas and a first reducing gas to the substrate to form a first amorphous metal layer on the substrate, and (b) forming a second amorphous metal layer on the first amorphous metal layer by time-divisionally supplying, a predetermined number of times, the metal-containing gas and a second reducing gas to the substrate on which the first amorphous metal layer is formed; and forming a crystallized metal layer on the substrate by simultaneously supplying the metal-containing gas and the first reducing gas to the substrate on which the amorphous metal film is formed.

A method of forming a tungsten film including disposing a substrate inside a process chamber; performing a tungsten nucleation layer forming operation for forming a tungsten nucleation layer on the substrate, performing a first operation for forming a portion of a tungsten bulk layer on the tungsten nucleation layer by alternately supplying a tungsten-containing gas and a reducing gas into the process chamber, and performing a second operation for stopping the supply of the tungsten-containing gas and the reducing gas and removing a remaining gas in the process chamber may be provided. The first operation and the second operation may be repeated at least twice until the tungsten bulk layer reaches a desired thickness.

A gasification component for use in a gasification environment includes a metal-based substrate and a coating deposited on the metal-based substrate. The coating includes at least about 51% by weight of chromium in the alpha phase at an operating temperature of gasification.

The present invention relates to a method for producing graphene on a face-centered cubic metal catalyst having a plane oriented in one direction, and more particularly to a method of producing graphene on a metal catalyst having the (100) or (111) crystal structure and a method of producing graphene using a catalyst metal foil having a single orientation, obtained by electroplating a metal catalyst by a pulse wave current and annealing the metal catalyst. The invention also relates to a method of producing graphene using a metal catalyst, and more particularly to a method of producing graphene, comprising the steps of: alloying a metal catalyst with an alloying element; forming step structures on the metal catalyst substrate in an atmosphere of a gas having a molecular weight of carbon; and supplying hydrocarbon and hydrogen gases to the substrate. On unidirectionally oriented metal catalyst prepared according to the present invention, graphene can be grown uniformly and epitaxially. Moreover, a method for producing graphene according to the present invention can form monolayer graphene by epitaxially growing graphene while increasing the growth rate of graphene.

Aspects of the methods and apparatus described herein relate to deposition of tungsten nucleation layers and other tungsten-containing films. Various embodiments of the methods involve exposing a substrate to alternating pulses of a tungsten precursor and a reducing agent at low chamber pressure to thereby deposit a tungsten-containing layer on the surface of the substrate. According to various embodiments, chamber pressure may be maintained at or below 10 Torr. In some embodiments, chamber pressure may be maintained at or below 7 Torr, or even lower, such as at or below 5 Torr. The methods may be implemented with a fluorine-containing tungsten precursor, but result in very low or undetectable amounts of fluorine in the deposited layer.

The invention relates to a process for preparing a composite layer, by applying an oligomeric organic compound layer on a substrate with a metal or metal oxide layer by vapour deposition, comprising the steps of (a) providing a substrate layer, (b) applying a metal or metal oxide layer under reduced pressure on said substrate, and (c) vapour depositing the oligomeric organic compound on the metal or metal oxide layer while the film remains at reduced pressure, wherein the oligomeric compound is evaporated from an oligomeric or polymeric compound comprising a stabiliser, or wherein the oligomeric compound is amorphous, or has a high solubility in certain solvents.