A method for creating an enhanced multipaction resistant diamond-like coating (DLC) coating with lower Secondary Electron Emission (SEE) properties is performed on an initial surface by etching a DLC coating deposited on the surface after deposition and optionally creating interlayers to enhance adhesion mechanical properties between the DLC coating and the initial surface.

An apparatus for in-vivo measuring H.sub.2O.sub.2 oxidation within a living tissue. The apparatus includes an electrochemical probe and an electrochemical stimulator-analyzer. The electrochemical probe includes a sensing part and a handle. The sensing part includes a working electrode, a counter electrode, and a reference electrode. The working electrode includes a first biocompatible conductive needle coated with a layer of vertically aligned multi-walled carbon nanotubes. The counter electrode includes a second biocompatible conductive needle. The reference electrode includes a third biocompatible conductive needle. The electrochemical stimulator-analyzer is configured to generate a set of electrical currents in a portion of the living tissue.

A surface treatment agent used for treating a substrate which has a surface having two or more regions made of materials that are different from each other, the agent including a compound (H) represented by Formula (H-1). In the formula, R.sup.1 represents a linear or branched alkyl group having 1 to 30 carbon atoms, a linear or branched fluorinated alkyl group having 1 to 30 carbon atoms, an aromatic hydrocarbon group, or a cycloalkyl group having 3 to 12 carbon atoms, and R.sup.2 represents a hydrogen atom, a linear or branched alkyl group having 1 to 8 carbon atoms, or a cycloalkyl group having 3 to 12 carbon atoms)

##STR00001##

A substrate includes a final silver-plated surface protected against silver tarnishing by a protective coat having a thickness between 1 nm and 200 nm, the protective coat includes a first coat of Al.sub.2O.sub.3 deposited on said final silver-plated surface and having a thickness between 0.5 nm and 100 nm, and on the first coat of Al.sub.2O.sub.3, a second coat of TiO.sub.2 having a thickness between 0.5 nm and 100 nm, the substrate including a coat of a silver and copper alloy comprising between 0.1% and 10% by weight of copper with respect to the total weight of the alloy, forming said final silver-plated surface, said coat of a silver and copper alloy having a thickness between 1000 nm and 3000 nm. Embodiments also relate to a method for manufacturing such a substrate.

The invention discloses equipment and preparation method for open and continuous growth of a carbon nanomaterial. The equipment comprises a metal foil tape feeding system, a CVD system and a collection system. The method includes continuously conveying a metal foil tape pretreated or not into the CVD system via the metal foil tape feeding system, depositing a required carbon nanomaterial on the surface of the metal foil tape by CVD, directly collecting by the collection system or directly post-treating the carbon nanomaterial by a post-treatment system, and even directly producing a end product of the carbon nanomaterial. All the systems in the invention are arranged in the open atmosphere rather than an air-isolated closed space. The invention can realize round-the-clock continuous operation to greatly improve the production efficiency of carbon nanomaterials.

A film formation method includes: providing a substrate including a first region in which a first material is exposed and a second region in which a second material different from the first material is exposed; forming an intermediate film selectively in the second region from the first region and the second region by supplying a processing gas to the substrate; forming a self-assembled monolayer in the first region and the second region after forming the intermediate film; removing the intermediate film and the self-assembled monolayer from the second region by heating the substrate to sublimate the intermediate film; and forming, after sublimation of the intermediate film, a target film selectively in the second region from the first region and the second region in a state in which the self-assembled monolayer is left in the first region.

A method for manufacturing diamond substrate of using source gas containing hydrocarbon gas and hydrogen gas to form diamond crystal on an underlying substrate by CVD method, to form a diamond crystal layer having nitrogen-vacancy centers in at least part of the diamond crystal, nitrogen or nitride gas is mixed in the source gas, wherein the source gas is: 0.005 volume % or more and 6.000 volume % or less of the hydrocarbon gas; 93.500 volume % or more and less than 99.995 volume % of the hydrogen gas; and 5.0×10.sup.−5 volume % or more and 5.0×10.sup.−1 volume % or less of the nitrogen gas or the nitride gas, and the diamond crystal layer having the nitrogen-vacancy centers is formed. A method for manufacturing a diamond substrate to form an underlying substrate, a diamond crystal having a dense nitrogen-vacancy centers (NVCs) with an orientation of NV axis by performing the CVD.

Methods are provided for selective film deposition. One method includes providing a substrate containing a dielectric material and a metal layer, the metal layer having an oxidized metal layer thereon, coating the substrate with a metal-containing catalyst layer, treating the substrate with an alcohol solution that removes the oxidized metal layer from the metal layer along with the metal-containing catalyst layer on the oxidized metal layer, and exposing the substrate to a process gas containing a silanol gas for a time period that selectively deposits a SiO.sub.2 film on the metal-containing catalyst layer on the dielectric material.

Methods for forming tungsten gap fill on a feature. A method for forming tungsten gap fill in a feature can include: treating a first layer on a substrate having a portion of the first layer exposed through the feature; depositing a tungsten liner layer atop the treated portion of the first layer in the feature using a physical vapor deposition (PVD) process; and depositing a tungsten fill layer into the feature and atop the tungsten liner layer using a chemical vapor deposition (CVD) process.

A method of forming a transition metal dichalcogenide thin film on a substrate includes treating the substrate with a metal organic material and providing a transition metal precursor and a chalcogen precursor around the substrate to synthesize transition metal dichalcogenide on the substrate. The transition metal precursor may include a transition metal element and the chalcogen precursor may include a chalcogen element.