An article or vessel is described including a vessel surface and a coating set comprising at least one tie coating, at least one barrier coating, and at least one pH protective coating. For example, the coating set can comprise a tie coating, a barrier coating, a pH protective coating and a second barrier coating; and in the presence of a fluid composition, the fluid contacting surface is the barrier coating or layer. The respective coatings can be applied by PECVD of a polysiloxane precursor. Such vessels can have a coated interior portion containing a fluid with a pH of 4 to 8. The barrier coating prevents oxygen from penetrating into the thermoplastic vessel, and the tie coating and pH protective coating together protect the barrier layer from the contents of the vessel. The second barrier coating is comparable to glass surface if needed.

In the surface-coated cutting tool, a Ti compound layer containing at least nitrogen and carbon is formed on a surface of cutting tool substrate, a nitrogen concentration in the Ti compound layer, in a case of being measured in a direction perpendicular to the surface of the cutting tool substrate in a vicinity of a cutting edge, gradually increases as a distance from cutting tool substrate increases within a range of 0.20 μm from the surface of the cutting tool substrate toward the Ti compound layer, an average concentration gradient of the nitrogen concentration is 20 at %/μm or more and 300 at %/μm or less, and an average nitrogen concentration in the Ti compound layer in the vicinity of the cutting edge is lower than an average nitrogen concentration in the Ti compound layer at a position of a flank face away from the cutting edge by 3 at % or more.

The disclosed technology generally relates to forming a titanium nitride layer, and more particularly to forming by atomic layer deposition a titanium nitride layer on a seed layer. In one aspect, a semiconductor structure comprises a semiconductor substrate comprising a non-metallic surface. The semiconductor structure additionally comprises a seed layer comprising silicon (Si) and nitrogen (N) conformally coating the non-metallic surface and a TiN layer conformally coating the seed layer. Aspects are also directed to methods of forming the semiconductor structures.

An article or vessel is described including a vessel surface and a coating set comprising at least one tie coating, at least one barrier coating, and at least one pH protective coating. For example, the coating set can comprise a tie coating, a barrier coating, a pH protective coating and a second barrier coating; and in the presence of a fluid composition, the fluid contacting surface is the barrier coating or layer. The respective coatings can be applied by PECVD of a polysiloxane precursor. Such vessels can have a coated interior portion containing a fluid with a pH of 4 to 8. The barrier coating prevents oxygen from penetrating into the thermoplastic vessel, and the tie coating and pH protective coating together protect the barrier layer from the contents of the vessel. The second barrier coating is comparable to glass surface if needed.

The present disclosure generally relates to processing chamber seasoning layers having a graded composition. In one example, the seasoning layer is a boron-carbon-nitride (BCN) film. The BCN film may have a greater composition of boron at the base of the film. As the BCN film is deposited, the boron concentration may approach zero, while the relative carbon and nitrogen concentration increases. The BCN film may be deposited by initially co-flowing a boron precursor, a carbon precursor, and a nitrogen precursor. After a first period of time, the flow rate of the boron precursor may be reduced. As the flow rate of boron precursor is reduced, RF power may be applied to generate a plasma during deposition of the seasoning layer.

A coated cutting tool, comprising: a substrate; and a coating layer formed on the substrate, wherein the coating layer includes a lower part layer and an upper part layer formed on the lower part layer, the lower part layer has an average thickness of 2.0 m or more and 15.0 m or less, and is formed of a Ti oxycarbonitride layer including a compound having a composition represented by formula (1) below:
Ti(C.sub.1-x-yN.sub.xO.sub.y)(1)
(where, x denotes an atomic ratio of an N element based on a total of a C element, the N element, and an O element, y denotes an atomic ratio of the O element based on a total of the C element, the N element, and the O element, and 0.35x0.60 and 0.01y0.10 are satisfied),
a FWHM of a rocking curve of a plane (4,2,2) of the lower part layer, which is obtained through X-ray diffraction, is 20 or less, the upper part layer is formed of an -aluminum oxide layer having an average thickness of 1.0 m or more and 15.0 m or less, and a FWHM of a rocking curve of a plane (0,0,12) of the upper part layer, which is obtained through X-ray diffraction, is 20 or less.

A material for water droplet erosion- and corrosion-resistant coatings, comprising metallic tungsten alloyed with carbon in a substantially uniform nano-structure that is substantially free of oxygen, other than at surface portions exposed to air or moisture. The coatings disclosed may be particularly resistant to water droplet erosion when coated onto gas or steam turbine blades.

An epitaxial silicon carbide single crystal wafer having a small depth of shallow pits and having a high quality silicon carbide single crystal thin film and a method for producing the same are provided. The epitaxial silicon carbide single crystal wafer according to the present invention is produced by forming a buffer layer made of a silicon carbide epitaxial film having a thickness of 1 m or more and 10 m or less by adjusting the ratio of the number of carbon to that of silicon (C/Si ratio) contained in a silicon-based and carbon-based material gas to 0.5 or more and 1.0 or less, and then by forming a drift layer made of a silicon carbide epitaxial film at a growth rate of 15 m or more and 100 m or less per hour. According to the present invention, the depth of the shallow pits observed on the surface of the drift layer can be set at 30 nm or less.

In an intermediate layer formed between a base material and a DLC layer, a Ti layer and a TiC layer formed on a surface of the Ti layer are provided, and a carbon content of the entire layer containing the Ti layer and the TiC layer is 53 at % or more and 77 at % or less.

An epitaxial silicon carbide single crystal wafer and a method for producing the same, wherein the epitaxial silicon carbide single crystal wafer is produced by forming a buffer layer made of a silicon carbide epitaxial film having a thickness of 1 m or more and 10 m or less by adjusting the ratio of the number of carbon to that of silicon (C/Si ratio) contained in a silicon-based and carbon-based material gas to 0.5 or more and 1.0 or less, and then by forming a drift layer made of a silicon carbide epitaxial film at a growth rate of 15 m or more and 100 m or less per hour, thereby bringing a depth of shallow pits observed on the surface of the drift layer to 30 nm or less.