A process including bringing a solid substrate in contact with a compound of general formula (I), (II), (III), or (IV) in the gaseous state

##STR00001##

where A is NR.sub.2 or OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group,
E is NR or O,
n is 0, 1 or 2, m is 0, 1 or 2, and
R′ is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.

A process including bringing a solid substrate in contact with a compound of general formula (I), (II), (III), or (IV) in the gaseous state

##STR00001##

where A is NR.sub.2 or OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group,
E is NR or O,
n is 0, 1 or 2, m is 0, 1 or 2, and
R′ is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.

The present disclosure is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. Described herein is a process for preparing metal-containing films including: (a) depositing a metal-containing compound from the gaseous state onto a solid substrate, and (b) bringing the solid substrate with the deposited metal-containing compound in contact with a compound of general formula (I) ##STR00001## wherein Z is a C.sub.2-C.sub.4 alkylene group, and R is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.

Solid preforms include a solid sublimation material surrounding a support phase. The preforms combine a solid to be sublimated for use in vapor deposition with a compatible support phase allowing the preform to maintain a shape as the solid sublimates. The preforms may be included in ampules for use in vapor deposition systems. The ampules may include one or more of the preforms, and the preforms may be oriented with respect to one another to control flow within the ampule. The preforms may be made via pressing a powder of the solid sublimation material onto the support phase, or by removing a solvent from a solution of the solid sublimation material.

Described herein is a process for preparing inorganic metal-containing films including bringing a solid substrate in contact with a compound of general formula (I) or (II) in the gaseous state

##STR00001##

where A is NR.sub.2 or OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group, E is NR or O, n is 1, 2 or 3, and R is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group, wherein if n is 2 and E is NR or A is OR, at least one R in NR or OR bears no hydrogen atom in the 1-position.

Described herein is a process including bringing a solid substrate in contact with a compound of general formula (I), (II), (III), or (IV) in the gaseous state

##STR00001##

where A is NR.sub.2 or OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group, E is NR or O, n is 0, 1 or 2, m is 0, 1 or 2, and R is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.

Described herein is a process including bringing a solid substrate in contact with a compound of general formula (I), (II), (III), or (IV) in the gaseous state

##STR00001##

where A is NR.sub.2 or OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group, E is NR or O, n is 0, 1 or 2, m is 0, 1 or 2, and R is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.

The present disclosure is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. Described herein is a process for preparing metal-containing films including: (a) depositing a metal-containing compound from the gaseous state onto a solid substrate, and (b) bringing the solid substrate with the deposited metal-containing compound in contact with a compound of general formula (I)

##STR00001## wherein Z is a C.sub.2-C.sub.4 alkylene group, and R is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.

An encapsulation structure, an encapsulation method and an electronic device are provided. The encapsulation structure includes an inorganic layer, an aluminum carbon layer and an organic layer. The aluminum carbon layer is on the inorganic layer and contacts with the inorganic layer; the organic layer is on the aluminum carbon layer and contacts with the aluminum carbon layer.

An encapsulation structure, an encapsulation method and an electronic device are provided. The encapsulation structure includes an inorganic layer, an aluminum carbon layer and an organic layer. The aluminum carbon layer is on the inorganic layer and contacts with the inorganic layer; the organic layer is on the aluminum carbon layer and contacts with the aluminum carbon layer.