According to one embodiment, a pattern forming material is disclosed. The pattern forming material contains a polymer. The polymer includes a specific first monomer unit. The monomer unit has a structure having ester of a carboxyl group at a terminal of a side chain. In the ester, a carbon atom bonded to an oxygen atom next to a carbonyl group is a primary carbon, a secondary carbon or a tertiary carbon. The pattern forming material is used for manufacturing a composite film as a mask pattern for processing a target film on a substrate. The composite film is formed by a process including, forming an organic film on the target film with the pattern forming material, patterning the organic film, and forming the composite film by infiltering a metal compound into the patterned organic film.

A method of forming a pattern on a substrate, the method including: forming a photoresist underlayer over a surface of the substrate, wherein the photoresist underlayer is formed from a composition comprising a polymer and a solvent, and the photoresist underlayer has a carbon content of greater than 47 at %; subjecting the photoresist underlayer to a a metal precursor, where the metal precursor infiltrates a free volume of the photoresist underlayer; and exposing the metal precursor-treated photoresist underlayer to an oxidizing agent to provide a metallized photoresist underlayer.

A method of forming a pattern on a substrate, the method including: forming a photoresist underlayer over a surface of the substrate, wherein the photoresist underlayer is formed from a composition comprising a polymer and a solvent, and the photoresist underlayer has a carbon content of greater than 47 at %; subjecting the photoresist underlayer to a a metal precursor, where the metal precursor infiltrates a free volume of the photoresist underlayer; and exposing the metal precursor-treated photoresist underlayer to an oxidizing agent to provide a metallized photoresist underlayer.

A method of forming a pattern on a substrate, the method including: forming a photoresist underlayer over a surface of the substrate, the photoresist underlayer formed from a composition including a polymer having a glass transition temperature of less than 110° C. and a solvent; subjecting the photoresist underlayer to a metal precursor, where the metal precursor infiltrates a free volume of the photoresist underlayer; and exposing the metal precursor-treated photoresist underlayer to an oxidizing agent to provide a metallized photoresist underlayer.

A method of forming a pattern on a substrate, the method including: forming a photoresist underlayer over a surface of the substrate, the photoresist underlayer formed from a composition including a polymer having a glass transition temperature of less than 110° C. and a solvent; subjecting the photoresist underlayer to a metal precursor, where the metal precursor infiltrates a free volume of the photoresist underlayer; and exposing the metal precursor-treated photoresist underlayer to an oxidizing agent to provide a metallized photoresist underlayer.

A method of filling a feature in a semiconductor structure includes forming a barrier layer in the feature by one of atomic layer deposition (ALD), chemical vapor deposition (CVD), or physical vapor deposition (PVD); wherein the barrier layer is one of cobalt (Co), molybdenum (Mo), molybdenum nitride (MoN) plus Mo, titanium (Ti), titanium aluminum carbide (TiAlC), or titanium nitride (TiN); and forming a metal layer in the feature and over the barrier layer by one of ALD or CVD; wherein the metal layer is one of aluminum (Al), Co, Mo, ruthenium (Ru), or tungsten (W).

Provided are an aluminum compound and a method for manufacturing a semiconductor device using the same. The aluminum compound may be represented by Formula 1. ##STR00001##

Provided are an aluminum compound and a method for manufacturing a semiconductor device using the same. The aluminum compound may be represented by Formula 1. ##STR00001##

A process including bringing a solid substrate in contact with a compound of general formula (I), (II), (III), or (IV) in the gaseous state ##STR00001##
where A is NR.sub.2 or OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group,
E is NR or O,
n is 0, 1 or 2, m is 0, 1 or 2, and
R′ is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.

A process including bringing a solid substrate in contact with a compound of general formula (I), (II), (III), or (IV) in the gaseous state ##STR00001##
where A is NR.sub.2 or OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group,
E is NR or O,
n is 0, 1 or 2, m is 0, 1 or 2, and
R′ is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.