There is provided a thin film manufacturing method which allows both a reduction in the carbon impurity concentration and a high film forming speed, as well as allows separate formation of stable crystal structures. There is provided a method for manufacturing an oxide crystal thin film. The method includes carrying raw material fine particles to a film forming chamber by means of a carrier gas, the raw material fine particles being formed from a raw material solution including water and at least one of a gallium compound and an indium compound, and forming an oxide crystal thin film on a sample on which films are to be formed, the sample being placed in the film forming chamber. At least one of the gallium compound and the indium compound is bromide or iodide.

The method comprises: forming an Al layer or Al droplets on a surface of a substrate by flowing an organic metal gas containing Al without flowing an ammonia gas; forming an AlN buffer layer on the Al layer or Al droplets by flowing the organic metal gas containing Al and the ammonia gas, the Al layer or Al droplets remaining as a metal under the AlN buffer layer; forming the Group III nitride semiconductor on the AlN buffer layer; and peeling the Group III nitride semiconductor in a place of the Al layer or Al droplets from the substrate.

There is provided a thin film manufacturing method which allows both a reduction in the carbon impurity concentration and a high film forming speed, as well as allows separate formation of stable crystal structures. There is provided a method for manufacturing an oxide crystal thin film. The method includes carrying raw material fine particles to a film forming chamber by means of a carrier gas, the raw material fine particles being formed from a raw material solution including water and at least one of a gallium compound and an indium compound, and forming an oxide crystal thin film on a sample on which films are to be formed, the sample being placed in the film forming chamber. At least one of the gallium compound and the indium compound is bromide or iodide.

There is provided a thin film manufacturing method which allows both a reduction in the carbon impurity concentration and a high film forming speed, as well as allows separate formation of stable crystal structures. There is provided a method for manufacturing an oxide crystal thin film. The method includes carrying raw material fine particles to a film forming chamber by means of a carrier gas, the raw material fine particles being formed from a raw material solution including water and at least one of a gallium compound and an indium compound, and forming an oxide crystal thin film on a sample on which films are to be formed, the sample being placed in the film forming chamber. At least one of the gallium compound and the indium compound is bromide or iodide.

The disclosed methods and apparatus improve the fabrication of solid fibers and microstructures. In many embodiments, the fabrication is from gaseous, solid, semi-solid, liquid, critical, and supercritical mixtures using one or more low molar mass precursor(s), in combination with one or more high molar mass precursor(s). The methods and systems generally employ the thermal diffusion/Soret effect to concentrate the low molar mass precursor at a reaction zone, where the presence of the high molar mass precursor contributes to this concentration, and may also contribute to the reaction and insulate the reaction zone, thereby achieving higher fiber growth rates and/or reduced energy/heat expenditures together with reduced homogeneous nucleation. In some embodiments, the invention also relates to the permanent or semi-permanent recording and/or reading of information on or within fabricated fibers and microstructures. In some embodiments, the invention also relates to the fabrication of certain functionally-shaped fibers and microstructures. In some embodiments, the invention may also utilize laser beam profiling to enhance fiber and microstructure fabrication.

The disclosed methods and apparatus improve the fabrication of solid fibers and microstructures. In many embodiments, the fabrication is from gaseous, solid, semi-solid, liquid, critical, and supercritical mixtures using one or more low molar mass precursor(s), in combination with one or more high molar mass precursor(s). The methods and systems generally employ the thermal diffusion/Soret effect to concentrate the low molar mass precursor at a reaction zone, where the presence of the high molar mass precursor contributes to this concentration, and may also contribute to the reaction and insulate the reaction zone, thereby achieving higher fiber growth rates and/or reduced energy/heat expenditures together with reduced homogeneous nucleation. In some embodiments, the invention also relates to the permanent or semi-permanent recording and/or reading of information on or within fabricated fibers and microstructures. In some embodiments, the invention also relates to the fabrication of certain functionally-shaped fibers and microstructures. In some embodiments, the invention may also utilize laser beam profiling to enhance fiber and microstructure fabrication.

There is provided a thin film manufacturing method which allows both a reduction in the carbon impurity concentration and a high film forming speed, as well as allows separate formation of stable crystal structures. There is provided a method for manufacturing an oxide crystal thin film. The method includes carrying raw material fine particles to a film forming chamber by means of a carrier gas, the raw material fine particles being formed from a raw material solution including water and at least one of a gallium compound and an indium compound, and forming an oxide crystal thin film on a sample on which films are to be formed, the sample being placed in the film forming chamber. At least one of the gallium compound and the indium compound is bromide or iodide.

There is provided a thin film manufacturing method which allows both a reduction in the carbon impurity concentration and a high film forming speed, as well as allows separate formation of stable crystal structures. There is provided a method for manufacturing an oxide crystal thin film. The method includes carrying raw material fine particles to a film forming chamber by means of a carrier gas, the raw material fine particles being formed from a raw material solution including water and at least one of a gallium compound and an indium compound, and forming an oxide crystal thin film on a sample on which films are to be formed, the sample being placed in the film forming chamber. At least one of the gallium compound and the indium compound is bromide or iodide.

Area selective deposition of aluminum-based films using alkyl aluminum amidinate precursors and methods thereof are provided. Area selective deposition comprises depositing an alkyl aluminum amidinate precursor on a substrate with a first surface portion comprising a metal and a second surface portion comprising a non-metal to form an aluminum-based film on the substrate. The aluminum-based film will be located on the second surface portion of the substrate and when the aluminum-based film is located on the first surface portion, a ratio of an average thickness of the film on the first surface portion to an average thickness of the film on the second surface portion is less than 1.

Area selective deposition of aluminum-based films using alkyl aluminum amidinate precursors and methods thereof are provided. Area selective deposition comprises depositing an alkyl aluminum amidinate precursor on a substrate with a first surface portion comprising a metal and a second surface portion comprising a non-metal to form an aluminum-based film on the substrate. The aluminum-based film will be located on the second surface portion of the substrate and when the aluminum-based film is located on the first surface portion, a ratio of an average thickness of the film on the first surface portion to an average thickness of the film on the second surface portion is less than 1.