Disclosed are methods for providing a thin film of nanocrystalline diamond grown on 6 nm nanocrystalline diamond powder on the surface of substrates. The thin film of nanocrystalline diamond can be deposited on wide-bandgap semiconducting devices to provide heat dissipation characteristics to the semiconducting devices.

A semiconductor manufacturing apparatus includes a process chamber. A chuck is disposed in the process chamber. The chuck is configured to hold a substrate thereon. A transfer unit is adjacent to the process chamber. The transfer unit includes a transfer hand configured to transfer the substrate. A slow discharge layer is disposed on a first surface of the transfer hand. The slow discharge layer is configured to discharge static electricity charged in the substrate.

A semiconductor manufacturing apparatus includes a process chamber. A chuck is disposed in the process chamber. The chuck is configured to hold a substrate thereon. A transfer unit is adjacent to the process chamber. The transfer unit includes a transfer hand configured to transfer the substrate. A slow discharge layer is disposed on a first surface of the transfer hand. The slow discharge layer is configured to discharge static electricity charged in the substrate.

A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition includes a microwave generator configured to generate microwaves at a frequency f, a plasma chamber that defines a resonance cavity for supporting a microwave resonance mode, a microwave coupling configuration for feeding microwaves from the microwave generator into the plasma chamber, a gas flow system for feeding process gases into the plasma chamber and removing them therefrom, and a substrate holder disposed in the plasma chamber and having a supporting surface for supporting a substrate on which the synthetic diamond material is to be deposited in use. The resonance cavity is configured to have a height that supports a TM.sub.011 resonant mode at the frequency f and is further configured to have a diameter that satisfies the condition that a ratio of the resonance cavity height/the resonance cavity diameter is in the range 0.3 to 1.0.

A method of fabricating a plurality of single crystal CVD diamonds. The method includes mounting a plurality of single crystal diamond substrates on a first carrier substrate. The plurality of single crystal diamond substrates is subjected to a first CVD diamond growth process to form a plurality of single crystal CVD diamonds on the plurality of single crystal diamond substrates. The plurality of single crystal CVD diamonds are mounted in a recessed carrier substrate and subjected to a second CVD diamond growth process.

A method of fabricating a plurality of single crystal CVD diamonds. The method includes mounting a plurality of single crystal diamond substrates on a first carrier substrate. The plurality of single crystal diamond substrates is subjected to a first CVD diamond growth process to form a plurality of single crystal CVD diamonds on the plurality of single crystal diamond substrates. The plurality of single crystal CVD diamonds are mounted in a recessed carrier substrate and subjected to a second CVD diamond growth process.

A cam follower is provided. The cam follower includes a polycrystalline diamond element, including an engagement surface. The engagement surface of the polycrystalline diamond element is positioned on the cam follower for sliding engagement with an opposing engagement surface of a cam. The cam includes at least some of a diamond reactive material.

A method and apparatus for conducting heat away from a semiconductor die are disclosed. A board assembly is disclosed that includes a circuit board, a semiconductor die electrically coupled to the circuit board and a Chemical Vapor Deposition Diamond (CVDD) coated wire. A portion of the CVDD-coated wire extends between a hot-spot on the semiconductor die and the circuit board. The board assembly includes a layer of thermally conductive paste that is disposed between the hot-spot on the semiconductor die and the circuit board. The layer of thermally conductive paste is in direct contact with a portion of the CVDD-coated wire.

A method and apparatus for conducting heat away from a semiconductor die are disclosed. A board assembly is disclosed that includes a circuit board, a semiconductor die electrically coupled to the circuit board and a Chemical Vapor Deposition Diamond (CVDD) coated wire. A portion of the CVDD-coated wire extends between a hot-spot on the semiconductor die and the circuit board. The board assembly includes a layer of thermally conductive paste that is disposed between the hot-spot on the semiconductor die and the circuit board. The layer of thermally conductive paste is in direct contact with a portion of the CVDD-coated wire.

A boron doped diamond electrode and its preparation method and application, the electrode is deposited with a boron or nitrogen doped diamond layer or a boron or nitrogen doped diamond layer composite layer on the surface of the electrode substrate, or after a transition layer is disposed on the surface of the substrate, a boron or nitrogen doped diamond layer or a composite layer of boron or nitrogen doped diamond layer is disposed on the surface of transition layer. The preparation method is depositing or plating a boron or nitrogen doped diamond layer on the surface of the electrode substrate, or providing a transition layer on the surface of the electrode substrate, and then depositing or plating a boron or nitrogen doped diamond layer or a composite layer of boron or nitrogen doped diamond layer on the surface of the transition layer.