A method of manufacturing a solar cell assembly by providing a substrate; depositing on the substrate a sequence of layers of semiconductor material forming a solar cell; mounting a permanent laminate supporting member with a thickness of 50 microns or less on top of the sequence of layers; utilizing the laminate structure for supporting the epitaxial sequence of layers of semiconductor material forming a solar cell during the processes of removing the substrate and depositing and lithographically patterning a plurality of metal grid lines disposed on the top surface of the first solar subcell, and attaching a cover glass over at least the grid lines of the solar cell.

A method for producing a nitride semiconductor stacked body includes: a first nitride semiconductor layer forming step of forming a first nitride semiconductor layer above a substrate within a reaction furnace; a second nitride semiconductor layer forming step of forming a second nitride semiconductor layer above the first nitride semiconductor layer; and a third nitride semiconductor layer forming step of forming a third nitride semiconductor layer on the upper surface of the second nitride semiconductor layer, the third nitride semiconductor layer having a band gap larger than the band gap of the second nitride semiconductor layer. No interval is provided between the second nitride semiconductor layer forming step and the third nitride semiconductor layer forming step, and the third nitride semiconductor layer forming step is performed continuously after the second nitride semiconductor layer forming step.

A mask material is deposited on a substrate or growth template. The substrate or growth template is compatible with crystalline growth of a crystalline optical material. Patterned portions of the mask material are removed to expose one or more regions of the substrate or growth template. The one or more regions have target shapes of one or more optical components. The crystalline optical material is selectively grown in the one or more regions to form the one or more optical components.

A method of forming a layer includes introducing a Group III precursor in a reactor, introducing a hydride Group V precursor in the reactor, and introducing a metal-organic Group V precursor in the reactor to form the layer. The method can further include mixing the hydride Group V precursor and the metal-organic Group V precursor. Advantageously, the layer and method of forming the layer utilize mixed Group V precursors, improve uniformity, decrease thermal sensitivity of the end material, normalize concentration profiles of precursors, improve yield, increase manufacturing efficiency, improve control of III-V ratios (e.g., pressure, growth rate, flux), and reduce manufacturing costs.

A vapor phase growth device includes a flow channel defining a space through which a source gas for forming an epi layer flows, a susceptor configured to hold a substrate in a state where the substrate faces the space, and a first member disposed vertically above and opposite to the susceptor, the first member having a thermal expansion coefficient not less than 0.7 times and not more than 1.3 times the thermal expansion coefficient of the substrate. The flow channel includes a holding portion configured to hold the first member.

Embodiments related to emissive display device structures having an emissive display element and a metamaterial lens having a plurality of nanoparticles over an emissive surface of the emissive display element to control the angular distribution of light emitted from the emissive display element, displays having such controlled emissive display device structures, systems incorporating such controlled emissive display device structures, and methods for fabricating them are discussed.

Provided are a semiconductor material based on metal nanowires and a porous nitride, and a preparation method thereof. The semiconductor material includes: a substrate; a buffer layer formed on the substrate; and a composite material layer formed on the buffer layer the composite material layer includes: a transverse porous nitride template layer; and a plurality of metal nanowires filled in pores of the transverse porous nitride template layer.

A system and method for generating gas are disclosed. The system may include one or more current sources to generate an electrical current. The system may also include one or more cathode-anode assemblies electrically coupled with the one or more current sources. The one or more cathode-anode assemblies may generate a gas in response to receiving the electrical current from the one or more current sources. Each of the one or more cathode-anode assemblies may include a first electrode and a second electrode forming a concentric cylindrical structure, wherein the second electrode surrounds the first electrode and forms a gap between the second electrode and the first electrode. The system may also include electrolyte provided in the gap.

A novel design for a nitrogen polar high-electron-mobility transistor (HEMT) structure comprising a GaN/InGaN composite channel. As A novel design for a nitrogen polar high-electron-mobility transistor (HEMT) structure comprising a GaN/InGaN composite channel. As illustrated herein, a thin InGaN layer introduced in the channel increases the carrier density, reduces the electric field in the channel, and increases the carrier mobility. The dependence of p on InGaN thickness (.sup.tInGaN) and indium composition (.sup.xIn) was investigated for different channel thicknesses. With optimized .sup.tInGaN and .sup.xIn, significant improvements in electron mobility were observed. For a 6 nm channel HEMT, the electron mobility increased from 606 to 1141 cm.sup.2/(V.Math.s) when the 6 nm thick pure GaN channel was replaced by the 4 nm GaN/2 nm In.sub.0.1Ga.sub.0.9N composite channel.

A cutting tool comprises a substrate and a coating layer provided on the substrate, the coating layer including a multilayer structure layer composed of a first unit layer and a second unit layer, and a lone layer, the lone layer including cubic Ti.sub.zAl.sub.1-zN crystal grains, an atomic ratio z of Ti in the Ti.sub.zAl.sub.1-zN being 0.4 or more and less than 0.55, the lone layer having a thickness with an average value of 2.5 nm or more and 10 nm or less, the multilayer structure layer having a thickness with an average value of 40 nm or more and 95 nm or less, one multilayer structure layer and one lone layer forming a repetitive unit having a thickness with an average value of 50 nm to 100 nm, a maximum value of 90 nm to 110 nm, and a minimum value of 40 nm to 60 nm.