Provided herein are low resistance metallization stack structures for logic and memory applications and related methods of fabrication. In some embodiments, thin metal oxynitride or metal nitride nucleation layers are deposited followed by deposition of a pure metal conductor. The nucleation layer is amorphous, which templates large pure metal film grain growth and reduced resistivity. Further, certain embodiments of the methods described below convert most or all of the metal oxynitride nucleation layer to a pure metal layer, further lowering the resistivity.

The method for processing a substrate includes the substrate preparation step of preparing the substrate, the pattern formation step of forming dummy patterns extending in an X-direction on the substrate, the mask arrangement step of arranging a stencil mask having multiple opening patterns on the substrate, the coating formation step of forming a metal film on the substrate through the multiple opening patterns, and the separation step of separating the dummy patterns from the substrate to obtain a submount. The dummy pattern has protrusion formed such that a side surface of the submount is exposed and formed close to the side surface with a clearance.

Methods for the formation of SiCN, SiCO and SiCON films comprising cyclical exposure of a substrate surface to a silicon-containing gas, a carbon-containing gas and a plasma. Some embodiments further comprise the addition of an oxidizing agent prior to at least the plasma exposure.

A method of manufacturing a semiconductor device, includes: forming an oxynitride film on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing supplying a precursor gas to the substrate through a first nozzle, supplying a nitriding gas to the substrate through a second nozzle, and supplying an oxidizing gas to the substrate through a third nozzle, wherein in the act of supplying the nitriding gas, an inert gas is supplied from at least one of the first nozzle and the third nozzle at a first flow rate, and in the act of supplying the oxidizing gas, an inert gas is supplied from the second nozzle at a second flow rate larger than the first flow rate.

A system and a method for forming a film with an annealing step and a deposition step is disclosed. The system performs an annealing step for inducing self-assembly or alignment within a polymer. The system also performs a selective deposition step in order to enable selective deposition on a polymer.

Certain exemplary embodiments can provide a system, which can comprise an ultra-thin polymer ceramic composite separator. The ultra-thin polymer ceramic composite separator can comprise Li-ion conducting ceramic material. The ceramic composite separator has a columnar grained microstructure. The ultra-thin polymer ceramic composite separator can comprise a single or bi-layer combination of LiPON, LATP, garnets, lithium sulfides, or Li.sub.1+2xZr.sub.2−zCa(PO.sub.4).sub.3.

Embodiments of this disclosure pertain to a coating material comprising silicon and/or aluminum, hydrogen and any two or more of oxygen, nitrogen, carbon, and fluorine. The coating material exhibits a hardness of about 17 GPa or greater and an optical band gap of about 3.5 eV or greater. In some embodiments, the coating material includes, in atomic %, silicon and/or aluminum in an amount of about 40 or greater, hydrogen in an amount in the range from about 1 to about 25, nitrogen in an amount of about 30 or greater, oxygen in an amount in the range from about 0 to about 7.5, and carbon in an amount in the range from about 0 to about 10. The coating material may optionally include fluorine and/or boron. Articles including the coating material are also described and exhibit an average transmittance of about 85% or greater over an optical wavelength regime in the range from about 380 nm to about 720 nm and colorlessness.

A coated cutting tool comprising a substrate and a coating layer formed on a surface of the substrate, wherein: the coating layer comprises a lower layer, an intermediate layer, and an upper layer in this order from the substrate side; the lower layer comprises one or two or more Ti compound layers containing a Ti compound of Ti and an element of at least one kind selected from the group consisting of C, N, O and B, the intermediate layer comprises an α-Al.sub.2O.sub.3 layer containing α-Al.sub.2O.sub.3, and the upper layer comprises a TiCNO layer containing TiCNO; an average thickness of the coating layer is 5.0 μm or more and 30.0 μm or less; in a specific first cross section, a misorientation A satisfies a specific condition; and in a specific second cross section, a misorientation B satisfies a specific condition.

A wire grid polarizer and method of making a wire grid polarizer can protect delicate wires of the wire grid polarizer from damage. The wire grid polarizer can include a protective-layer located on an array of wires. The array of wires can further be protected by a chemical coating on an inside surface of the air-filled channels, closed ends of the air-filled channels, damaged wires of the array of wires in a line parallel to an edge of the wire grid polarizer, or combinations thereof. The method can include (i) providing the wire grid polarizer, (ii) applying the protective-layer, by physical vapor deposition or chemical vapor deposition but excluding atomic layer deposition, onto the array of wires, (iii) cutting the wire grid polarizer wafer into multiple wire grid polarizer parts, then (iv) protecting the array of wires.

An object of the present invention is to provide a laminated film which can prevent transmission of the water vapor at the high level, and has good flex resistance, and the present invention provides a laminated film comprising at least a gas barrier layer and an inorganic polymer layer being laminated on a resin substrate, wherein concerning a distance from a surface of the inorganic polymer layer in a film thickness direction of the layer and the ratio of an oxygen atom to a total amount of a silicon atom, an oxygen atom, a carbon atom and a nitrogen atom (oxygen atomic ratio), the ratio of a value of the oxygen atomic ratio O/(total amount of Si, O, C and N) in a region from a surface on a side opposite to the gas barrier layer up to 30% of a film thickness of the inorganic polymer in a depth direction to a value of the oxygen atomic ratio O/(total amount of Si, O, C and N) in a region from 30% of a film thickness of the inorganic polymer layer in a depth direction up to a surface on a side of the gas barrier layer is 1.05 or more.