Provided are a silylamine compound, a composition for depositing a silicon-containing thin film containing the same, and a method for manufacturing a silicon-containing thin film using the composition, and more particularly, to a silylamine compound capable of being usefully used as a precursor of a silicon-containing thin film, a composition for depositing a silicon-containing thin film containing the same, and a method for manufacturing a silicon-containing thin film using the composition.

Methods of selectively forming SiCON films are described. In some embodiments, the methods comprise sequential exposure to a silicon halide, a mixture of alkanolamine and amine reactants and a deposition plasma. In some embodiments, the method further comprises pre-cleaning the target substrate to improve selectivity.

A composition and method for using the composition in the fabrication of an electronic device are disclosed. Compounds, compositions and methods for depositing a low dielectric constant (<4.0) and high oxygen ash resistance silicon-containing film such as, without limitation, a carbon doped silicon oxide, are disclosed.

An ALD apparatus includes a first process chamber configured to supply a first source gas and induce adsorption of a first material film. A second process chamber is configured to supply a second source gas and induce adsorption of a second material film. A third process chamber is configured to supply a third source gas and induce absorption of a third material film. A surface treatment chamber is configured to perform a surface treatment process on each of the first to third material films and remove a reaction by-product. A heat treatment chamber is configured to perform a heat treatment process on the substrate on which the first to third material films are adsorbed in a predetermined order and transform the first to third material films into a single compound thin film.

Methods for atomic layer deposition (ALD) of plasma enhanced atomic layer deposition (PEALD) of low-K films are described. A method of depositing a film comprises exposing a substrate to a silicon precursor having the general formulae (Ia), (Ib), (Ic), (Id), (IX), or (X)

##STR00001##

wherein R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.5, R.sup.6, R.sup.7, and R.sup.8 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, and substituted or unsubstituted vinyl, X is silicon (Si) or carbon (C), Y is carbon (C) or oxygen (O), R.sup.9, R.sup.10, R.sup.11, R.sup.12 R.sup.13, R.sup.14, R.sup.15, and R.sup.16 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, substituted or unsubstituted vinyl, silane, substituted or unsubstituted amine, or halide; and exposing the substrate to an oxidant to react with the silicon-containing film to form one or more of a silicon oxycarbide (SiOC) film or a silicon oxycarbonitride (SiOCN) film on the substrate, the oxidant comprising one or more of a carboxylic acid, an aldehyde, a ketone, an ethenediol, an oxalic acid, a glyoxylic acid, a peroxide, an alcohol, and a glyoxal.

Exemplary methods of forming a silicon-oxygen-and-nitrogen-containing barrier layer are described. The methods include flowing deposition gases into a substrate processing region of a processing chamber, where the deposition gases include a silicon-containing gas and a nitrogen-containing gas. A deposition plasma is generated from the deposition gases in the substrate processing region. A silicon-oxygen-and-nitrogen-containing layer is deposited on a substrate from the deposition plasma, where the silicon-oxygen-and-nitrogen-containing layer is characterized by thickness of less than or about 2000 Å. The methods further include exposing a surface of the silicon-oxygen-and-nitrogen-containing layer to a treatment plasma to form a treated silicon-oxygen-and-nitrogen-containing layer, where the treatment plasma is formed from a nitrogen-containing gas and is silicon free.

There is provided a technique which includes: forming a first film containing silicon, oxygen, carbon and nitrogen on a substrate by performing a first cycle a predetermined number of times, the first cycle including non-simultaneously performing: forming a first layer containing silicon, oxygen, carbon and nitrogen by simultaneously supplying first aminosilane and an oxidant to the substrate; and performing a first modifying process to the first layer under a first temperature; and performing a second modifying process to the first film under a second temperature that is higher than the first temperature.

A method for manufacturing a coated item 10 in a chemical deposition reactor and a coated item produced by said method are provided. The method comprises deposition of a first coating on a first surface of the item 10, and/or deposition of a second coating on a second surface of said item.

Provided are a composition for depositing a silicon-containing thin film containing a bis(aminosilyl)alkylamine compound and a method for manufacturing a silicon-containing thin film using the same, and more particularly, a composition for depositing a silicon-containing thin film, containing the bis(aminosilyl)alkylamine compound capable of being usefully used as a precursor of the silicon-containing thin film, and a method for manufacturing a silicon-containing thin film using the same.

An insert of the present disclosure includes a base. The base includes a first surface, a second surface connecting to the first surface, and a cutting edge located on at least a part of a ridgeline of the first surface and the second surface. A region within 2.0 mm from the cutting edge in the first surface is a surface region A. A region within 0.5 mm from the surface region A is a region A1. A region within 1.2 mm from the surface region A and the second surface to 2.0 mm from the surface region A and the second surface is a region A2. An area ratio of vacancies in the region A1 is 0.005-0.04 area %, and an area ratio of vacancies in the region A2 is 0.05-0.2 area %. A cutting tool includes a holder including a pocket and the insert located in the pocket.