Provided herein are methods and apparatuses for controlling uniformity of processing at an edge region of a semiconductor wafer. In some embodiments, the methods include providing a backside inhibition gas as part of a deposition-inhibition-deposition (DID) sequence.

The present invention relates to a susceptor including a substrate including a carbon material and having one main surface on which a silicon water is to be placed, and another main surface facing the one main surface, in which an entire surface of the substrate is covered with a thin film including silicon carbide, the one main surface has an emissivity variation of 3% or less, and a ratio of an average emissivity between the one main surface and the another main surface facing the one main surface is from 1:1 to 1:0.8.

A manufacturing method of a ring-shaped element for an etcher, comprises a granulation operation comprising i) a slurry manufacturing process of preparing a slurry by mixing a raw material including boron carbide, a sinterability enhancer with a solvent; and ii) a granulation process of drying the slurry to prepare granulated raw material; a molding operation of manufacturing a green body by molding the granulated raw material; a sintering operation of carbonizing and sintering the green body to manufacture a sintered body; a shape operation of shaping the sintered body to a ring-shaped element for an etcher. The sinterability enhancer comprises one selected from the group consisting of carbon, boron oxide and combinations thereof.

A silicon carbide epitaxial substrate includes a silicon carbide single crystal substrate and a silicon carbide layer. In a direction parallel to a central region, a ratio of a standard deviation of a carrier concentration of the silicon carbide layer to an average value of the carrier concentration of the silicon carbide layer is less than 5%. The average value of the carrier concentration is more than or equal to 1×10.sup.14 cm.sup.−3 and less than or equal to 5×10.sup.16 cm.sup.−3. In the direction parallel to the central region, a ratio of a standard deviation of a thickness of the silicon carbide layer to an average value of the thickness of the silicon carbide layer is less than 5%. The central region has an arithmetic mean roughness (Sa) of less than or equal to 1 nm. The central region has a haze of less than or equal to 50.

A process for manufacturing a friction component made of composite material, includes the densification of a fibrous preform of carbon yarns by a matrix including at least pyrocarbon and at least one ZrO.sub.xC.sub.y phase, where 1≤x≤2 and 0≤y≤1, the matrix being formed by chemical vapor infiltration at least from a first gaseous precursor of pyrocarbon and a second gaseous precursor including zirconium, the second precursor being an alcohol or a C.sub.1 to C.sub.6 polyalcohol modified by linking the oxygen atom of at least one alcohol function to a group of formula —Zr—R.sub.3, the substituents R being identical or different, and R being selected from: —H, C.sub.1 to C.sub.5 carbon chains and halogen atoms.

A process for manufacturing a friction component made of composite material, includes the densification of a fibrous preform of carbon yarns by a matrix including at least pyrocarbon and at least one ZrO.sub.xC.sub.y phase, where 1≤x≤2 and 0≤y≤1, the matrix being formed by chemical vapor infiltration at least from a first gaseous precursor of pyrocarbon and a second gaseous precursor including zirconium, the second precursor being an alcohol or a C.sub.1 to C.sub.6 polyalcohol modified by linking the oxygen atom of at least one alcohol function to a group of formula —Zr—R.sub.3, the substituents R being identical or different, and R being selected from: —H, C.sub.1 to C.sub.5 carbon chains and halogen atoms.

A laminate including a base material and a resin layer provided on at least one surface of the base material. The resin layer is formed of a heat- or active energy ray-curable resin composition, and an outermost surface of the laminate on the one surface side of the base material has an unevenness containing a wrinkle structure.

A method for processing a substrate includes performing a cyclic plasma process including a plurality of cycles, each cycle of the plurality of cycles including purging a plasma processing chamber including the substrate with a first deposition gas including carbon. The substrate includes a first layer including silicon and a second layer including a metal oxide. The method further includes exposing the substrate to a first plasma generated from the first deposition gas to selectively deposit a first polymeric film over the first layer relative to the second layer; purging the plasma processing chamber with an etch gas including fluorine; and exposing the substrate to a second plasma generated from the etch gas to etch the second layer.

A method for processing a substrate includes performing a cyclic plasma process including a plurality of cycles, each cycle of the plurality of cycles including purging a plasma processing chamber including the substrate with a first deposition gas including carbon. The substrate includes a first layer including silicon and a second layer including a metal oxide. The method further includes exposing the substrate to a first plasma generated from the first deposition gas to selectively deposit a first polymeric film over the first layer relative to the second layer; purging the plasma processing chamber with an etch gas including fluorine; and exposing the substrate to a second plasma generated from the etch gas to etch the second layer.

A pedestal 103 of the present invention is a pedestal 103 for a seed 102 for crystal growth, in which one main surface 103a to which the seed 102 adheres is flat, and the pedestal has a gas-permeable region 106 which a thickness from the one main surface 103a that is formed to be locally thin.