C23C16/34

COATED TOOL AND CUTTING TOOL
20230234142 · 2023-07-27 ·

A coated tool in a non-limiting embodiment of the present disclosure includes a base and a coating layer located on the base. The coated tool includes a first surface, a second surface adjacent to the first surface, and a cutting edge located on at least a part of a ridge part of the first surface and the second surface. The coating layer includes a Ti-based coating layer. If a fracture toughness value of the Ti-based coating layer is measured on a surface of the coating layer parallel to a surface of the base, the Ti-based coating layer includes a first region where the fracture toughness value is 10 MPa.Math.m.sup.0.5 or more.

METHOD FOR THE SURFACE TREATMENT OF A JEWEL, IN PARTICULAR FOR THE WATCHMAKING INDUSTRY
20230002882 · 2023-01-05 · ·

A method for treating a jewel of the monocrystalline or polycrystalline type (20), in particular for the watchmaking industry, the jewel (20) including a body (23) defining the shape thereof. The method includes a step of ion implantation on the surface (24) of at least a part of the body (23) to modify the roughness of the surface (24).

METHOD FOR THE SURFACE TREATMENT OF A JEWEL, IN PARTICULAR FOR THE WATCHMAKING INDUSTRY
20230002882 · 2023-01-05 · ·

A method for treating a jewel of the monocrystalline or polycrystalline type (20), in particular for the watchmaking industry, the jewel (20) including a body (23) defining the shape thereof. The method includes a step of ion implantation on the surface (24) of at least a part of the body (23) to modify the roughness of the surface (24).

SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM THEREFOR
20230002892 · 2023-01-05 ·

Described herein is a technique capable of suppressing generation of particles by removing by-products in a groove of a high aspect ratio. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber in which a substrate is processed; and a substrate support provided in the process chamber and including a plurality of supports where the substrate is placed, wherein the process chamber includes a process region where a process gas is supplied to the substrate and a purge region where the process gas above the substrate is purged, and the purge region includes a first pressure purge region to be purged at a first pressure and a second pressure purge region to be purged at a second pressure higher than the first pressure.

SUBSTRATE PROCESSING APPARATUS, INNER TUBE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

According to one aspect of a technique the present disclosure, there is provided a processing apparatus including: an inner tube provided with a substrate accommodating region in which substrates are accommodated along an arrangement direction; an outer tube provided outside the inner tube; gas supply ports provided on a side wall of the inner tube along the arrangement direction; first exhaust ports provided on the side wall of the inner tube along the arrangement direction; a second exhaust port provided at a lower end portion of the outer tube; and a gas guide for controlling a flow of gas in an annular space between the inner tube and the outer tube and including a first fin near a lowermost first exhaust port among the first exhaust ports that is closest to the second exhaust port in a space between the lowermost first exhaust port and the second exhaust port.

IGNITION CONTROL METHOD, FILM FORMING METHOD, AND FILM FORMING APPARATUS
20230235460 · 2023-07-27 ·

An ignition control method is performed in a film forming apparatus including: a processing container that accommodates a substrate; a plasma box; a pair of electrodes disposed in the processing container to sandwich the plasma box; and a radio-frequency (RF) power supply connected to the pair of electrodes via a matching box. The ignition control method includes: (a) setting a process type that specifies a processing condition of the substrate; (b) measuring first information indicating a voltage between the pair of electrodes for each of a plurality of adjustment positions of the variable capacitor; (c) determining a preset value of the variable capacitor based on the first information measured in (b); and (d) setting an initial position of each of the plurality of adjustment positions of the variable capacitor to the preset value determined in (c).

IGNITION CONTROL METHOD, FILM FORMING METHOD, AND FILM FORMING APPARATUS
20230235460 · 2023-07-27 ·

An ignition control method is performed in a film forming apparatus including: a processing container that accommodates a substrate; a plasma box; a pair of electrodes disposed in the processing container to sandwich the plasma box; and a radio-frequency (RF) power supply connected to the pair of electrodes via a matching box. The ignition control method includes: (a) setting a process type that specifies a processing condition of the substrate; (b) measuring first information indicating a voltage between the pair of electrodes for each of a plurality of adjustment positions of the variable capacitor; (c) determining a preset value of the variable capacitor based on the first information measured in (b); and (d) setting an initial position of each of the plurality of adjustment positions of the variable capacitor to the preset value determined in (c).

Conditioning treatment for ALD productivity
11566324 · 2023-01-31 · ·

Deposition methods and apparatus for conditioning a process kit to increase process kit lifetime are described. A nitride film formed on a process kit is exposed to conditioning process comprising nitrogen and hydrogen radicals to condition the nitride film to decrease particulate contamination from the process kit.

Conditioning treatment for ALD productivity
11566324 · 2023-01-31 · ·

Deposition methods and apparatus for conditioning a process kit to increase process kit lifetime are described. A nitride film formed on a process kit is exposed to conditioning process comprising nitrogen and hydrogen radicals to condition the nitride film to decrease particulate contamination from the process kit.

METHOD FOR COATING FIBERS IN A FLUIDIZED BED

A method for coating fibers, includes desizing sized short fibers having an average length less than or equal to 5 mm, the short fibers being made of ceramic material or carbon, sieving the desized short fibers in order to separate them from any agglomerates of sized short fibers still present, introducing the desized and sieved short fibers into a reactor, and coating the short fibers in the reactor by chemical vapor deposition in a fluidized bed.