A surface-coated cutting tool according to the present invention includes a tool body and a hard coating layer including a complex carbonitride layer containing a small amount of chlorine and (Ti.sub.(1-x)Zr.sub.xyHf.sub.x(1-y))(N.sub.(1-z)C.sub.z) (0.10≤x≤0.90, 0<y≤1.0, 0.08<z<0.60), a ZrHf and C content ratios in cycles, a cycle distance between a maximum ZrHf content point and an adjacent minimum ZrHf content point and a cycle distance between a maximum C content point and an adjacent minimum C content point are 5 to 100 nm, an average value of content ratio differences Δx and Δz is 0.02 or more, a distance between the maximum ZrHf content point and the maximum C content point is ⅕ or less of the distance between a maximum content point and a minimum content point of adjacent ZrHf components, and a composition fluctuation structure is 10% or more.

A surface-coated cutting tool according to the present invention includes a tool body and a hard coating layer including a complex carbonitride layer containing a small amount of chlorine and (Ti.sub.(1-x)Zr.sub.xyHf.sub.x(1-y))(N.sub.(1-z)C.sub.z) (0.10≤x≤0.90, 0<y≤1.0, 0.08<z<0.60), a ZrHf and C content ratios in cycles, a cycle distance between a maximum ZrHf content point and an adjacent minimum ZrHf content point and a cycle distance between a maximum C content point and an adjacent minimum C content point are 5 to 100 nm, an average value of content ratio differences Δx and Δz is 0.02 or more, a distance between the maximum ZrHf content point and the maximum C content point is ⅕ or less of the distance between a maximum content point and a minimum content point of adjacent ZrHf components, and a composition fluctuation structure is 10% or more.

Provided is a plasma enhanced atomic layer deposition (PEALD) process for depositing etch-resistant SiOCN films. These films provide improved growth rate, improved step coverage and excellent etch resistance to wet etchants and post-deposition plasma treatments containing O.sub.2 and NH.sub.3 co-reactants. This PEALD process relies on one or more precursors reacting in tandem with the plasma exposure to deposit the etch-resistant thin-films of SiOCN. The films display excellent resistance to wet etching with dilute aqueous HF solutions, both after deposition and after post-deposition plasma treatment(s). Accordingly, these films are expected to display excellent stability towards post-deposition fabrication steps utilized during device manufacturing and build.

Provided is a plasma enhanced atomic layer deposition (PEALD) process for depositing etch-resistant SiOCN films. These films provide improved growth rate, improved step coverage and excellent etch resistance to wet etchants and post-deposition plasma treatments containing O.sub.2 and NH.sub.3 co-reactants. This PEALD process relies on one or more precursors reacting in tandem with the plasma exposure to deposit the etch-resistant thin-films of SiOCN. The films display excellent resistance to wet etching with dilute aqueous HF solutions, both after deposition and after post-deposition plasma treatment(s). Accordingly, these films are expected to display excellent stability towards post-deposition fabrication steps utilized during device manufacturing and build.

Provided is a surface-coated cutting tool including a complex carbonitride layer on the tool body, wherein a ratio of crystal grains having a NaCl type face-centered cubic structure is 80 area % or more, x.sub.avg and y.sub.avg satisfy 0.60≤x.sub.avg≤0.90 and 0.000≤y.sub.avg≤0.050, respectively, a composition of the Ti—Al complex carbonitride layer being represented by (Ti.sub.1-xAl.sub.x)(C.sub.yN.sub.1-y), the x.sub.avg being an average of x that is an Al content in a total content of Al and Ti, and the y.sub.avg being an average of y that is a C content in a total content of C and N, the crystal grains having the NaCl type face-centered cubic structure include crystal grains in which the x repeatedly increases and decreases, the crystal grains include 10 to 40 area % of crystal grains G.sub.1 having an average distance of 40 to 160 nm and crystal grains G.sub.s having an average distance of 1 to 7 nm.

Provided is a surface-coated cutting tool including a complex carbonitride layer on the tool body, wherein a ratio of crystal grains having a NaCl type face-centered cubic structure is 80 area % or more, x.sub.avg and y.sub.avg satisfy 0.60≤x.sub.avg≤0.90 and 0.000≤y.sub.avg≤0.050, respectively, a composition of the Ti—Al complex carbonitride layer being represented by (Ti.sub.1-xAl.sub.x)(C.sub.yN.sub.1-y), the x.sub.avg being an average of x that is an Al content in a total content of Al and Ti, and the y.sub.avg being an average of y that is a C content in a total content of C and N, the crystal grains having the NaCl type face-centered cubic structure include crystal grains in which the x repeatedly increases and decreases, the crystal grains include 10 to 40 area % of crystal grains G.sub.1 having an average distance of 40 to 160 nm and crystal grains G.sub.s having an average distance of 1 to 7 nm.

A surface coated cutting tool includes a tool substrate; and a hard coating layer on the tool substrate. The hard coating layer includes, in sequence from the tool substrate toward a surface of the tool, a titanium carbonitride inner layer, a titanium nitride lower intermediate layer, a titanium carbonitride upper intermediate layer, a titanium oxycarbonitride bonding auxiliary layer, and an aluminum oxide outer layer. Titanium nitride grain boundaries in the lower intermediate layer and titanium carbonitride grain boundaries in the upper intermediate layer are continuous from titanium carbonitride grain boundaries in the inner layer. The texture coefficient TC(422) of titanium carbonitride in the inner layer and the upper intermediate layer is 3.0 or more, and the texture coefficient TC(0 0 12) of α-aluminum oxide in the outer layer is 5.0 or more.

A surface coated cutting tool includes a tool substrate; and a hard coating layer on the tool substrate. The hard coating layer includes, in sequence from the tool substrate toward a surface of the tool, a titanium carbonitride inner layer, a titanium nitride lower intermediate layer, a titanium carbonitride upper intermediate layer, a titanium oxycarbonitride bonding auxiliary layer, and an aluminum oxide outer layer. Titanium nitride grain boundaries in the lower intermediate layer and titanium carbonitride grain boundaries in the upper intermediate layer are continuous from titanium carbonitride grain boundaries in the inner layer. The texture coefficient TC(422) of titanium carbonitride in the inner layer and the upper intermediate layer is 3.0 or more, and the texture coefficient TC(0 0 12) of α-aluminum oxide in the outer layer is 5.0 or more.

A cemented carbide may include a hard phase including W and C, and a binder phase including cubic Co. The binder phase may include Zr. The Co may include a lattice constant of more than 3.5575 Å and not more than 3.5600 Å. A coated tool may include a coating layer located on a surface of the cemented carbide. A cutting tool may include a holder that is extended from a first end toward a second end and may include a pocket on a side of the first end, and the coated tool located in the pocket.

A cemented carbide may include a hard phase including W and C, and a binder phase including cubic Co. The binder phase may include Zr. The Co may include a lattice constant of more than 3.5575 Å and not more than 3.5600 Å. A coated tool may include a coating layer located on a surface of the cemented carbide. A cutting tool may include a holder that is extended from a first end toward a second end and may include a pocket on a side of the first end, and the coated tool located in the pocket.