A lithium boron coating and a method of producing the same. Atomic layer deposition deposits lithium and boron to form a lithium borate layer. The lithium borate maybe deposited as a solid electrolyte.

A method of forming a film on a substrate having silicon surfaces and dielectric surfaces includes precleaning the substrate; applying an inhibitor species to the dielectric surfaces; and exposing the substrate to a precursor while maintaining a temperature of less than about 600 degrees Celsius.

A method of forming a film on a substrate having silicon surfaces and dielectric surfaces includes precleaning the substrate; applying an inhibitor species to the dielectric surfaces; and exposing the substrate to a precursor while maintaining a temperature of less than about 600 degrees Celsius.

A heating element for in-flight de-icing of aircraft is disclosed. The heating element includes a carbon fiber material that is designed to be arranged on a component of an aircraft. The carbon fiber material includes at least two electrical contacts for connecting to an electrical wiring system, and at least one insulation layer for electrical insulation.

A heating element for in-flight de-icing of aircraft is disclosed. The heating element includes a carbon fiber material that is designed to be arranged on a component of an aircraft. The carbon fiber material includes at least two electrical contacts for connecting to an electrical wiring system, and at least one insulation layer for electrical insulation.

Embodiments of the present technology include semiconductor processing methods to make boron-and-silicon-containing layers that have a changing atomic ratio of boron-to-silicon. The methods may include flowing a silicon-containing precursor into a substrate processing region of a semiconductor processing chamber, and also flowing a boron-containing precursor and molecular hydrogen (H.sub.2) into the substrate processing region of the semiconductor processing chamber. The boron-containing precursor and the H.sub.2 may be flowed at a boron-to-hydrogen flow rate ratio. The flow rate of the boron-containing precursor and the H.sub.2 may be increased while the boron-to-hydrogen flow rate ratio remains constant during the flow rate increase. The boron-and-silicon-containing layer may be deposited on a substrate, and may be characterized by a continuously increasing ratio of boron-to-silicon from a first surface in contact with the substrate to a second surface of the boron-and-silicon-containing layer furthest from the substrate.

Embodiments of the present technology include semiconductor processing methods to make boron-and-silicon-containing layers that have a changing atomic ratio of boron-to-silicon. The methods may include flowing a silicon-containing precursor into a substrate processing region of a semiconductor processing chamber, and also flowing a boron-containing precursor and molecular hydrogen (H.sub.2) into the substrate processing region of the semiconductor processing chamber. The boron-containing precursor and the H.sub.2 may be flowed at a boron-to-hydrogen flow rate ratio. The flow rate of the boron-containing precursor and the H.sub.2 may be increased while the boron-to-hydrogen flow rate ratio remains constant during the flow rate increase. The boron-and-silicon-containing layer may be deposited on a substrate, and may be characterized by a continuously increasing ratio of boron-to-silicon from a first surface in contact with the substrate to a second surface of the boron-and-silicon-containing layer furthest from the substrate.

A component formed of a refractory metal has a surface that is at least partially coated with a layer of titanium diboride. There is also described a method of manufacturing the component and the application of TiB.sub.2 as a release agent in high-temperature applications.

A component formed of a refractory metal has a surface that is at least partially coated with a layer of titanium diboride. There is also described a method of manufacturing the component and the application of TiB.sub.2 as a release agent in high-temperature applications.

Embodiments disclosed herein relate to methods for forming memory devices, and more specifically to improved methods for forming a dielectric encapsulation layer over a memory material in a memory device. In one embodiment, the method includes thermally depositing a first material over a memory material at a temperature less than the temperature of the thermal budget of the memory material, exposing the first material to nitrogen plasma to incorporate nitrogen in the first material, and repeating the thermal deposition and nitrogen plasma operations to form a hermetic, conformal dielectric encapsulation layer over the memory material. Thus, a memory device having a hermetic, conformal dielectric encapsulation layer over the memory material is formed.