Embodiments of the present technology include semiconductor processing methods to make boron-and-silicon-containing layers that have a changing atomic ratio of boron-to-silicon. The methods may include flowing a silicon-containing precursor into a substrate processing region of a semiconductor processing chamber, and also flowing a boron-containing precursor and molecular hydrogen (H.sub.2) into the substrate processing region of the semiconductor processing chamber. The boron-containing precursor and the H.sub.2 may be flowed at a boron-to-hydrogen flow rate ratio. The flow rate of the boron-containing precursor and the H.sub.2 may be increased while the boron-to-hydrogen flow rate ratio remains constant during the flow rate increase. The boron-and-silicon-containing layer may be deposited on a substrate, and may be characterized by a continuously increasing ratio of boron-to-silicon from a first surface in contact with the substrate to a second surface of the boron-and-silicon-containing layer furthest from the substrate.

Embodiments of the present technology include semiconductor processing methods to make boron-and-silicon-containing layers that have a changing atomic ratio of boron-to-silicon. The methods may include flowing a silicon-containing precursor into a substrate processing region of a semiconductor processing chamber, and also flowing a boron-containing precursor and molecular hydrogen (H.sub.2) into the substrate processing region of the semiconductor processing chamber. The boron-containing precursor and the H.sub.2 may be flowed at a boron-to-hydrogen flow rate ratio. The flow rate of the boron-containing precursor and the H.sub.2 may be increased while the boron-to-hydrogen flow rate ratio remains constant during the flow rate increase. The boron-and-silicon-containing layer may be deposited on a substrate, and may be characterized by a continuously increasing ratio of boron-to-silicon from a first surface in contact with the substrate to a second surface of the boron-and-silicon-containing layer furthest from the substrate.

Embodiments of the disclosure generally relate to a method for dry stripping a boron carbide layer deposited on a semiconductor substrate. In one embodiment, the method includes loading the substrate with the boron carbide layer into a pressure vessel, exposing the substrate to a processing gas comprising an oxidizer at a pressure between about 500 Torr and 60 bar, heating the pressure vessel to a temperature greater than a condensation point of the processing gas and removing one or more products of a reaction between the processing gas and the boron carbide layer from the pressure vessel.

A method for depositing a metal boride film onto a substrate is disclosed. In particular, the method comprises pulsing a metal halide precursor onto the substrate and pulsing a boron compound precursor onto the substrate. A reaction between the metal halide precursor and the boron compound precursor forms a metal boride film. Specifically, the method discloses forming a tantalum boride (TaB.sub.2) or a niobium boride (NbB.sub.2) film.

A method for depositing a metal boride film onto a substrate is disclosed. In particular, the method comprises pulsing a metal halide precursor onto the substrate and pulsing a boron compound precursor onto the substrate. A reaction between the metal halide precursor and the boron compound precursor forms a metal boride film. Specifically, the method discloses forming a tantalum boride (TaB.sub.2) or a niobium boride (NbB.sub.2) film.

A method for forming a film that includes forming a boron nitride film on a substrate, and forming a boron-containing silicon film on the boron nitride film.

A method for forming a film that includes forming a boron nitride film on a substrate, and forming a boron-containing silicon film on the boron nitride film.

A technique includes forming a film containing a first element, a second element, and carbon on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: forming a first solid layer containing the first element and carbon, and having a thickness of more than one atomic layer and equal to or less than several atomic layers, by supplying a precursor gas having a chemical bond of the first element and carbon to the substrate and confining the precursor gas within the process chamber, under a condition in which the precursor gas is autolyzed and at least a part of the chemical bond of the first element and carbon is maintained without being broken; and forming a second solid layer by supplying a reaction gas containing the second element to the substrate to modify the first solid layer.

A technique includes forming a film containing a first element, a second element, and carbon on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: forming a first solid layer containing the first element and carbon, and having a thickness of more than one atomic layer and equal to or less than several atomic layers, by supplying a precursor gas having a chemical bond of the first element and carbon to the substrate and confining the precursor gas within the process chamber, under a condition in which the precursor gas is autolyzed and at least a part of the chemical bond of the first element and carbon is maintained without being broken; and forming a second solid layer by supplying a reaction gas containing the second element to the substrate to modify the first solid layer.

A low friction top coat over a multilayer metal/ceramic bondcoat provides a conductive substrate, such as a rotary tool, with wear resistance and corrosion resistance. The top coat further provides low friction and anti-stickiness as well as high compressive stress. The high compressive stress provided by the top coat protects against degradation of the tool due to abrasion and torsional and cyclic fatigue. Substrate temperature is strictly controlled during the coating process to preserve the bulk properties of the substrate and the coating. The described coating process is particularly useful when applied to shape memory alloys.