System and method of non-line-of-sight coating of a sand screen for use in wellbores during the production of hydrocarbon fluids from subterranean formations. The coatings can have uniformly coated internal and external surfaces.

System and method of non-line-of-sight coating of a sand screen for use in wellbores during the production of hydrocarbon fluids from subterranean formations. The coatings can have uniformly coated internal and external surfaces.

A material deposition system comprises a precursor source and a chemical vapor deposition apparatus in selective fluid communication with the precursor source. The precursor source configured to contain at least one metal-containing precursor material in one or more of a liquid state and a solid state. The chemical vapor deposition apparatus comprises a housing structure, a distribution manifold, and a substrate holder. The housing structure is configured and positioned to receive at least one feed fluid stream comprising the at least one metal-containing precursor material. The distribution manifold is within the housing structure and is in electrical communication with a signal generator. The substrate holder is within the housing structure, is spaced apart from the distribution assembly, and is in electrical communication with an additional signal generator. A microelectronic device and methods of forming a microelectronic device also described.

A material deposition system comprises a precursor source and a chemical vapor deposition apparatus in selective fluid communication with the precursor source. The precursor source configured to contain at least one metal-containing precursor material in one or more of a liquid state and a solid state. The chemical vapor deposition apparatus comprises a housing structure, a distribution manifold, and a substrate holder. The housing structure is configured and positioned to receive at least one feed fluid stream comprising the at least one metal-containing precursor material. The distribution manifold is within the housing structure and is in electrical communication with a signal generator. The substrate holder is within the housing structure, is spaced apart from the distribution assembly, and is in electrical communication with an additional signal generator. A microelectronic device and methods of forming a microelectronic device also described.

Methods and systems for depositing threshold voltage shifting layers onto a surface of a substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process, depositing a threshold voltage shifting layer onto a surface of the substrate.

A method of non-line-of-sight coating of a sand screen for use in wellbores during the production of hydrocarbon fluids from subterranean formations. The coating can have uniformly coated internal and external surfaces.

A method of non-line-of-sight coating of a sand screen for use in wellbores during the production of hydrocarbon fluids from subterranean formations. The coating can have uniformly coated internal and external surfaces.

A method for etching a surface including obtaining a structure comprising a plurality of nanowires on or above a substrate and a dielectric layer on or above the nanowires, wherein the dielectric layer comprises protrusions formed by the underlying nanowires; reacting a surface of the dielectric layer with a reactant, comprising a gas or a plasma, to form a reactive layer on the dielectric layer, wherein the reactive layer comprises a chemical compound including the reactant and elements of the dielectric layer and the reactive layer comprises sidewalls defined by the protrusions; and selectively etching the reactive layer, wherein the etching etches the protrusions laterally through the sidewalls so as to planarize the surface and remove or shrink the protrusions.

ALD and p-CVD methods to generate MgB.sub.2 and MgB.sub.2-containing films in the growth temperature range of 250-300° C. The thermal ALD and p-CVD methods shown herein ensure that the high-temperature-induced roughening, which causes high surface resistances in MgB.sub.2 coatings grown by the mentioned conventional techniques, is avoided. The MgB.sub.2 and MgB.sub.2-containing films exhibit superconductive properties at above 20° K.

ALD and p-CVD methods to generate MgB.sub.2 and MgB.sub.2-containing films in the growth temperature range of 250-300° C. The thermal ALD and p-CVD methods shown herein ensure that the high-temperature-induced roughening, which causes high surface resistances in MgB.sub.2 coatings grown by the mentioned conventional techniques, is avoided. The MgB.sub.2 and MgB.sub.2-containing films exhibit superconductive properties at above 20° K.