Methods for forming an OLED device are described. An encapsulation structure having organic buffer layer sandwiched between barrier layers is deposited over an OLED structure. The buffer layer is formed with a fluorine-containing plasma. The second barrier layer is then deposited over the buffer layer. Additionally, to ensure good adhesion, a buffer adhesion layer is formed between the buffer layer and the first barrier layer. Finally, to ensure good transmittance, a stress reduction layer is deposited between the buffer layer and the second barrier layer.

A method for selectively depositing a metal oxide film is disclosed. In particular, the method comprises pulsing a metal or semi-metal precursor onto the substrate and pulsing an organic reactant onto the substrate. A reaction between the metal or semi-metal precursor and the organic reactant selectively forms a metal oxide film on either a dielectric layer or a metal layer.

Embodiments of the present disclosure provide a reaction gas supply system and a control method. The reaction gas supply system includes a plurality of precursor containers and a plurality of supply regulator devices. The precursor container is connected to at least one of the reaction chambers. The plurality of precursor containers include at least a pair of precursor containers of an arbitrary combination. A supply regulator device is arranged between each pair of precursor containers. The supply regulator device is configured to connect the corresponding pair of precursor containers. With the reaction gas supply system and the control method of the present disclosure, the reaction gas may be ensured to be supplied stably, the utilization rate of the precursor may be increased, and the production efficiency and the product quality may be increased.

Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.

Forming a protective coating ex situ in an atomic layer deposition process to coat one or more chamber components subsequently installed in a reaction chamber provides a number of benefits over more conventional coating methods such as in situ deposition of an undercoat. In certain cases the protective coating may have a particular composition such as aluminum oxide, aluminum fluoride, aluminum nitride, yttrium oxide, and/or yttrium fluoride. The protective coating may help reduce contamination on wafers processed using the coated chamber component. Further, the protective coating may act to stabilize the processing conditions within the reaction chamber, thereby achieving very stable/uniform processing results over the course of processing many batches of wafers, and minimizing radical loss. Also described are a number of techniques that may be used to restore the protective coating after the coated chamber component is used to process semiconductor wafers.

A method for processing a negative electrode plate, a sodium-metal negative electrode plate and related devices. In a vacuum environment, the metal vapor reacts with oxygen, and the metal oxide formed by the reaction is plated on the surface of the sodium-metal negative electrode plate to form a metal oxide protective layer with high mechanical strength and stable chemical properties. The metal oxide protective layer can greatly reduce the phenomenon of low yield and performance deterioration caused by the reaction of sodium metal with air and water during the processing of the sodium-metal negative electrode plate. Since the metal oxide has a nanoscale thickness, it can form a corresponding sodium salt with sodium metal under electrochemical conditions, thereby improving the sodium ion transport rate on the surface of the sodium-metal negative electrode plate and improving the battery’s kinetic performance.

Thermally insulating materials (TIMs) for use in concentrated solar thermal (CST) technologies comprising a mesoporous oxide including a porous oxide matrix comprising a porous oxide and a metal oxide or metal nitride in the form of a conformal layer of the metal oxide or metal nitride on the surface of the porous oxide matrix, wherein the conformal layer completely covers the surface area of the porous oxide matrix, or in the form of metal oxide or metal nitride nanoparticles dispersed throughout the porous oxide matrix, or in the form of a conformal coating or nanoparticles, methods of preparing same, and solar devices comprising same.

Thermally insulating materials (TIMs) for use in concentrated solar thermal (CST) technologies comprising a mesoporous oxide including a porous oxide matrix comprising a porous oxide and a metal oxide or metal nitride in the form of a conformal layer of the metal oxide or metal nitride on the surface of the porous oxide matrix, wherein the conformal layer completely covers the surface area of the porous oxide matrix, or in the form of metal oxide or metal nitride nanoparticles dispersed throughout the porous oxide matrix, or in the form of a conformal coating or nanoparticles, methods of preparing same, and solar devices comprising same.

A coated tool in a non-limiting embodiment of the present disclosure includes a base and a coating layer located on the base. The coated tool includes a first surface, a second surface adjacent to the first surface, and a cutting edge located on at least a part of a ridge part of the first surface and the second surface. The coating layer includes a Ti-based coating layer. If a fracture toughness value of the Ti-based coating layer is measured on a surface of the coating layer parallel to a surface of the base, the Ti-based coating layer includes a first region where the fracture toughness value is 10 MPa.Math.m.sup.0.5 or more.

The present disclosure relates to an apparatus for processing a substrate, and more particularly, to an apparatus for processing a substrate, which deposits a thin-film on a substrate.

The apparatus for processing a substrate in accordance with an exemplary embodiment includes a plurality of source gas supply units configured to respectively supply a plurality of source gases among which at least one contains (3-Dimethylaminopropyl)Dimethylindium (DADI), a gas mixing unit connected to each of the plurality of source gas supply units and having an inner space in which each of the plurality of source gases moves at a passing speed less than a supply speed of each of the plurality of source gases, and a chamber connected with the gas mixing unit and having a reaction space to which the source gases mixed in the inner space are supplied.