Disclosed is a thin film stress control-based coating method for large-area coating. The method uses a two-step coating process in which a first coating layer that is a relatively low-hardness layer is primarily formed on a base member and a second coating layer that is a relatively high-hardness layer is secondarily formed on the first coating layer. The method can form a high-density coating structure that is hardly peeled off over a relatively large area compared to conventional coating methods by suppressing internal stress of the coating layers of the coating structure. Further disclosed is a coating structure manufactured by the same method.

Process chambers are cleaned from tin oxide deposits by a method that includes a step of forming a volatile tin-containing compound by exposing the tin oxide to a mixture of hydrogen (H.sub.2) and a hydrocarbon in a plasma, followed by a step that removes a carbon-containing polymer that formed as a result of the hydrocarbon exposure. The carbon-containing polymer can be removed by exposing the carbon-containing polymer to an oxygen-containing reactant (e.g., to O.sub.2 in a plasma), or to H.sub.2 in an absence of a hydrocarbon. These steps are repeated as many times as necessary to clean the process chamber. The method can be used to clean ALD, CVD, and PVD process chambers and is particularly useful for cleaning at a relatively low temperature of less than about 120° C.

A laminate that improves barrier properties of an atomic layer deposition film in spite of use of a substrate made of a polymer material, and provides a gas barrier film and a method of producing the same. The laminate includes: a substrate made a polymer material; an undercoat layer disposed on at least part of a surface of the substrate and made up of an inorganic material containing Ta; and an atomic layer deposition film disposed so as to cover a surface of the undercoat layer.

A laminate that improves barrier properties of an atomic layer deposition film in spite of use of a substrate made of a polymer material, and provides a gas barrier film and a method of producing the same. The laminate includes: a substrate made a polymer material; an undercoat layer disposed on at least part of a surface of the substrate and made up of an inorganic material containing Ta; and an atomic layer deposition film disposed so as to cover a surface of the undercoat layer.

A multilayer structure of the present invention is a multilayer structure including a base substrate and a semiconductor film that is made of α-Ga.sub.2O.sub.3 or an α-Ga.sub.2O.sub.3-based solid solution and has a corundum crystal structure, the semiconductor film being disposed on the base substrate. The semiconductor film has an average film thickness of greater than or equal to 10 μm. The semiconductor film is convexly or concavely warped. An amount of warpage of the semiconductor film is 20 μm or greater and 64 μm or less.

There is provided a technique that includes: a first nozzle arranged to correspond to a first region where a plurality of product substrates are arranged in a substrate arrangement region where a plurality of substrates are arranged in a reaction tube, the first nozzle supplying a hydrogen-containing gas into the reaction tube; a second nozzle arranged to correspond to the first region and supplying an oxygen-containing gas into the reaction tube; a third nozzle arranged closer to the bottom opening than the first region to correspond to a second region where a dummy substrate or a heat insulator or both is arranged, the third nozzle supplying a dilution gas into the reaction tube; and a controller configured to be capable of controlling the hydrogen-containing gas and the dilution gas so that a concentration of the hydrogen-containing gas in the second region is lower than that in the first region.

Methods for depositing silicon oxycarbide (SiOC) thin films on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor that does not comprise nitrogen and a second reactant that does not include oxygen. In some embodiments the methods allow for the deposition of SiOC films having improved acid-based wet etch resistance.

An inorganic coating may be applied to bond optically scattering particles or components. Optically scattering particles bonded via the inorganic coating may form a three dimensional film which can receive a light emission, convert, and emit the light emission with one or more changed properties. The inorganic coating may be deposited using a low-pressure deposition technique such as an atomic layer deposition (ALD) technique. Two or more components, such as an LED and a ceramic phosphor layer may be bonded together by depositing an inorganic coating using the ALD technique.

An inorganic coating may be applied to bond optically scattering particles or components. Optically scattering particles bonded via the inorganic coating may form a three dimensional film which can receive a light emission, convert, and emit the light emission with one or more changed properties. The inorganic coating may be deposited using a low-pressure deposition technique such as an atomic layer deposition (ALD) technique. Two or more components, such as an LED and a ceramic phosphor layer may be bonded together by depositing an inorganic coating using the ALD technique.

A substrate processing method includes supplying processing gas from a plurality of gas holes formed along a longitudinal direction of an injector, which extends in a vertical direction along an inner wall surface of a processing container and is rotatable around a rotational axis extending in the vertical direction, to perform a predetermined process on a substrate accommodated in the processing container. The predetermined process includes a plurality of operations, and a supply direction of the processing gas is changed by rotating the injector in accordance with the operations.