The present invention discloses methods for extracting and recycling hydrogen in an MOCVD process by FTrPSA. Through pretreatment, fine deamination, PSA hydrogen extraction, deep dehydration and hydrogen purification procedures, ammonia-containing waste hydrogen from an MOCVD process is purified to meet the electronic-level hydrogen (the purity is greater than or equal to 99.99999% v/v) standard required by the MOCVD process, to implement resource reuse of exhaust gases, where the hydrogen yield is greater than or equal to 75-86%. The present invention solves the technical problem that atmospheric-pressure or low-pressure waste hydrogen from MOCVD processes cannot be returned to the MOCVD processes for use after being recycled, and fills the gap in green and circular economy development of the LED industry.

The present invention discloses methods for extracting and recycling ammonia in MOCVD processes by FTrPSA. Through pretreatment, medium-shallow temperature PSA concentration, condensation and freezing, liquid ammonia vaporization, PSA ammonia extraction, and ammonia gas purification procedures, ammonia-containing exhaust gases from MOCVD processes are purified to meet the electronic-level ammonia gas standard required by the MOCVD processes, so as to implement recycling and reuse of the exhaust gases, where the ammonia gas yield is greater than or equal to 70-85%. The present invention solves the technical problem that atmospheric-pressure or low-pressure ammonia-containing exhaust gases in MOCVD processes cannot be returned to the MOCVD processes for use after being recycled, and fills the gap in green and circular economy development of the LED industry.

Embodiments include a processing tool for processing substrates in a low processing pressure and a high processing pressure. In an embodiment, the processing tool comprises a chamber body and a pedestal in the chamber body. In an embodiment, the pedestal is displaceable, and the pedestal has a first surface and a second surface opposite the first surface. In an embodiment, the processing tool further comprises a first gas port for supplying gasses into the chamber body and a first exhaust positioned above the first surface of the pedestal. In an embodiment, the embodiment further comprises a second gas port for supplying gasses into the chamber body and a second exhaust positioned below the second surface of the pedestal.

The present invention relates to a process for producing of polycrystalline silicon, and the method includes (1) preparing a silicon-containing gas; (2) storing the silicon-containing gas in a storage tank; (3) depositing polycrystalline silicon by injecting the silicon-containing gas stored in the storage tank to a CVD reactor; (4) treating an off-gas emitted in the depositing step; and (5) injecting the gas treated in the treating step to the storage tank.

A raw material supply apparatus according to an aspect of the present disclosure includes: a container configured to store a solution of a first solid raw material dissolved in a solvent or a dispersion system of the first solid raw material dispersed in a dispersion medium; a removal part configured to form a second solid raw material by removing the solvent or the dispersion medium from the solution or the dispersion system stored in the container; a detection part configured to detect a completion of a removal of the solvent or the dispersion medium from the solution or the dispersion system; and a heater configured to heat the second solid raw material.

Treatment chamber (C) for a chemical vapor deposition (CVD) reactor, comprising, within a body (B) defining an enclosure (E) under partial vacuum, a system (3) for injecting reactive species with a view to being deposited on a substrate (8) placed on a support element (5), and a thermal control system (2) for regulating the temperature of the injection system (3) or keeping it substantially constant, this thermal control system (2) having an interface zone (ZI) with the injection system (3). The treatment chamber (C) further comprises, in the interface zone (ZI), at least one thermal transfer zone (ZT) that is (i) insulated from the enclosure under partial vacuum (E) by an insulating barrier to the pressure and to the diffusion of contaminating species and (ii) filled with a thermal interface material (10). Application for carrying out CVD depositions, especially pulsed CVD depositions.

Systems and methods for supplying a precursor material for an atomic layer deposition (ALD) process are provided. A gas supply provides one or more precursor materials to a deposition chamber. The deposition chamber receives the one or more precursor materials via an input line. A gas circulation system is coupled to an output line of the deposition chamber. The gas circulation system includes a gas composition detection system configured to produce an output signal indicating a composition of a gas exiting the deposition chamber through the output line. The gas circulation system also includes a circulation line configured to transport the gas exiting the deposition chamber to the input line. A controller is coupled to the gas supply. The controller controls the providing of the one or more precursor materials by the gas supply based on the output signal of the gas composition detection system.

A vaporizer according to one embodiment includes: a charging unit in which solid feedstock that generates a vaporized gas can be charged; and a vaporized gas extraction unit that is provided at a bottom portion of the charging unit in a manner communicable with the charging unit and extracts the vaporized gas generated by heating the solid feedstock.

Systems, reagent support trays, particle suppression devices, and methods are disclosed. In one aspect, a system includes a vaporizer vessel having one or more interior walls enclosing an interior volume and a plurality of reagent support trays configured to be vertically stackable within the interior volume. Each of the plurality of reagent support trays is configured to be vertically stackable within the interior volume to form a stack of reagent support trays. One or more of the plurality of reagent support trays is configured to redirect a flow of a gas passing between adjacent reagent support trays in the stack of reagent support trays to cause the flow of gas to interact with the source reagent material in a particular reagent support tray before passing into a next of the plurality of reagent support trays in the stack of reagent support trays.

A method of making an atomic layer nanoribbon that includes forming a double atomic layer ribbon having a first monolayer and a second monolayer on a surface of the first monolayer, wherein the first monolayer and the second monolayer each contains a transition metal dichalcogenide material, oxidizing at least a portion of the first monolayer to provide an oxidized portion, and removing the oxidized portion to provide an atomic layer nanoribbon of the transition metal dichalcogenide material. Also provided are double atomic layer ribbons, double atomic layer nanoribbons, and single atomic layer nanoribbons prepared according to the method.