Exemplary semiconductor processing chamber showerheads include an inner core region. The inner core region may define a plurality of apertures. The showerheads may include an outer core region disposed about an outer periphery of the inner core region. The outer core region may define an annular channel. The showerheads may include a heating element disposed within the annular channel. The showerheads may include an annular liner disposed about an outer periphery of the outer core region. The inner core region and the outer core region may include an aluminum alloy. The annular liner may have a lower thermal conductivity than the aluminum alloy.

Provided is a method for seasoning a reactor in which a dry cleaning step and a first seasoning step are carried out at the first temperature, then the temperature is raised to a second temperature. The method also comprises a second seasoning step and a substrate processing step are carried out at the second temperature. The seasoning step of the disclosure suppresses dry cleaning byproducts from evaporating, spreading and re-spreading in a reactor. Thus, deterioration of the film quality deposited on a substrate is prevented, extending the wet etch cycle of the reactor and improving the uptime and the efficiency of the reactor.

A method for particle abatement in a semiconductor apparatus is provided. In a preferred embodiment, the method comprises processing a substrate in a process chamber of the semiconductor processing apparatus. The processing comprises loading the substrate in the process chamber having one or more inner surfaces, providing a reaction gas mixture to the process chamber, thereby forming a substrate film and a chamber wall film, and loading the substrate out of the process chamber. The method further comprises repeating the processing step one or more times until the chamber wall film has reached a pre-determined chamber wall film thickness, upon which exposing the inner surfaces to an ambient, thereby modifying at least an upper portion of the chamber wall film, thus reducing a probability of particle formation in the process chamber.

A semiconductor processing apparatus is disclosed. The apparatus may include, a reaction chamber and a susceptor dispose in the reaction chamber configured for supporting a substrate thereon, the susceptor comprising a plurality of through-holes in an axial direction of the susceptor. The apparatus may also include, a plurality of lift pins, each of the lift pins being disposed within a respective through-hole, and at least one gas transmitting channel comprising one or more gas channel outlets, the one or more gas channel outlets being disposed proximate to the through-holes. Methods for processing a substrate within a reaction chamber are also disclosed.

A ground shield of a processing chamber includes a ceramic body including a ground shield plate, a raised edge extending from an upper surface of the ground shield plate, and a hollow shaft that extends from a lower surface of the ground shield plate. An electrically conductive layer is formed on and conforms to at least the upper surface of the ground shield plate and an interior surface of the hollow shaft. A first protective layer is formed on at least the electrically conductive layer. A heater plate of a heater first within the raised edge and on the ground shield plate such that the heater plate is disposed on top of the first protective layer, the electrically conductive layer, and the upper surface of the ground shield plate.

A method for processing one or more substrates in a plasma processing chamber is provided. A plurality of cycles is provided, wherein each cycle comprises providing a pre-coat process, processing at least one substrate within the plasma processing chamber, and cleaning the plasma processing chamber. The providing the pre-coat process comprises one or more cycles of depositing a silicon containing pre-coat layer and depositing a carbon containing pre-coat layer.

A particle suppression method includes a) supplying a first processing gas containing a halogen element and a metal element into a chamber in which a substrate is accommodated and plasmatizing the first processing gas to form a film containing the metal element on the substrate, b) reducing a surface of a deposit formed on an inner wall of the chamber by supplying a second processing gas including hydrogen gas into the chamber and turning the second processing gas into plasma, and c) nitriding the reduced surface of the deposit by supplying a third processing gas containing a nitrogen element into the chamber.

A semiconductor process system includes a process chamber. The process chamber includes a wafer support configured to support a wafer. The system includes a bell jar configured to be positioned over the wafer during a semiconductor process. The interior surface of the bell jar is coated with a rough coating. The rough coating can include zirconium.

According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: (a) heating a substrate to a first temperature while supporting the substrate on a substrate support, and supplying a process gas into a process vessel accommodating the substrate support; (b) lowering a temperature of a low temperature structure provided in the process vessel to a second temperature lower than the first temperature by supplying an inert gas or air to a coolant flow path provided in the process vessel after (a) for a predetermined time, wherein defects occur when a cleaning gas is supplied to the low temperature structure at the first temperature; and (c) cleaning the low temperature structure by supplying the cleaning gas into the process vessel after (b)

A method can include vapor depositing a corrosion resistant coating to internal and external surfaces of a metallic air data probe. For example, vapor depositing can include using atomic layer deposition (ALD). The method can include placing the metallic air data probe in a vacuum chamber and evacuating the vacuum chamber before using vapor deposition. The corrosion resistant coating can be or include a ceramic coating. In certain embodiments, vapor depositing can include applying a first precursor, then applying a second precursor to the first precursor to form the ceramic coating.