A detoxifying device 100 having an inner wall 104 that forms a flow passage 103 through which treatment gas flows includes a first piping 130 that forms a part of the flow passage 103, a replaceable piping section 170 that forms a part of the flow passage 103 at the position downstream of the first piping 130, and is connected thereto for sprinkling the cleaning water to remove the solid product adhering to the inner wall 104, and a second piping 150 that forms a part of the flow passage 103 at the position downstream of the piping section 170, and is connected thereto.

Forming a protective coating ex situ in an atomic layer deposition process to coat one or more chamber components subsequently installed in a reaction chamber provides a number of benefits over more conventional coating methods such as in situ deposition of an undercoat. In certain cases the protective coating may have a particular composition such as aluminum oxide, aluminum fluoride, aluminum nitride, yttrium oxide, and/or yttrium fluoride. The protective coating may help reduce contamination on wafers processed using the coated chamber component. Further, the protective coating may act to stabilize the processing conditions within the reaction chamber, thereby achieving very stable/uniform processing results over the course of processing many batches of wafers, and minimizing radical loss. Also described are a number of techniques that may be used to restore the protective coating after the coated chamber component is used to process semiconductor wafers.

Methods of cleaning a PVD chamber component, for example, process kit components are disclosed. The method comprises at least one of directing a jet of pressurized fluid at a surface of the PVD chamber component, directing pressurized carbon dioxide at the surface of the PVD chamber component, placing the PVD chamber component in a liquid and producing ultrasonic waves in the liquid to further remove contaminants from the surface of the PVD chamber component, using a plasma to clean the surface of the PVD chamber component, subjecting the PVD chamber component to a thermal cycle by heating up to a peak temperature of at least 50° C. and subsequently cooling down to room, placing the PVD chamber component in a process chamber, reducing the pressure in the process chamber below atmospheric pressure and purging the process chamber with a gas, surface conditioning the surface of the PVD chamber component, and drying the surface of the PVD chamber component by directing a gas on the surface of the PVD chamber component.

Cleaning fixtures for cleaning a showerhead assembly are disclosure. The cleaning fixtures include: a fixture body incorporating three or more cavities, each cavity being separate from an adjacent cavity by a partition, and a number of channels associated with each cavity for fluidly connecting the cavities with an upper surface of the fixture body.

Exemplary methods of removing lithium-containing deposits may include heating a surface of a lithium-containing deposit. The surface may include oxygen or nitrogen, and the lithium-containing deposit may be disposed on a surface of a processing chamber. The methods may include contacting the surface of the lithium-containing deposit with a hydrogen-containing precursor. The contacting may hydrogenate the surface of the lithium-containing deposit. The methods may include contacting the lithium-containing deposit with a nitrogen-containing precursor to form volatile byproducts. The methods may include exhausting the volatile byproducts of the lithium-containing deposit from the processing chamber.

A vacuum system for silicon crystal growth includes a silicon crystal growth chamber, a first vacuum pipe, a second vacuum pipe, and an oxides container. The first vacuum pipe is coupled to the chamber and has within a first brush that is movable in a first direction for removing internal oxides. The second vacuum pipe is coupled to the first vacuum pipe for receiving the internal oxides via the first brush and has within a second brush that is movable in a second direction different from the first direction. The second brush transports the received internal oxides away from the first vacuum pipe. The oxides container is coupled to the second vacuum pipe for receiving the internal oxides via the second brush.

The present disclosure provides a method for cleaning a vacuum system used in the manufacture of OLED devices. The method includes performing pre-cleaning for cleaning at least a portion of the vacuum system, and performing plasma cleaning using a remote plasma source.

A method for cleaning a semiconductor fabrication equipment part having gas holes used in single-wafer type semiconductor fabrication equipment for processing semiconductor wafers, wherein the semiconductor fabrication equipment part having gas holes is formed of aluminum or an aluminum alloy, and has a distribution plate having a plurality of gas holes, the method including: a step (1) of scanning a gas injection surface of the distribution place, which is a surface facing the wafer, with a laser beam; and a step (2) of bringing the gas injection surface and insides of the gas holes into contact with a cleaning liquid containing an inorganic acid.

In accordance with some embodiments, a method for processing semiconductor wafer is provided. The method includes introducing a first processing gas of an atomic layer deposition (ALD) process on the semiconductor substrate in a chamber; introducing a second processing gas of the ALD process on the semiconductor substrate in the chamber; creating an exhaust flow from the chamber; monitoring a concentration of the first processing gas of the ALD process in the exhaust flow; in response to the monitored concentration of the first processing gas of the ALD process in the exhaust flow, introducing a cleaning gas into the chamber.

Exemplary semiconductor processing methods may include forming a seasoning film on a heater of a processing chamber by a first deposition process. The method may include performing a hardmask deposition process in the processing chamber. The method may include cleaning the processing chamber by a first cleaning process. The method may include monitoring a gas produced during the first cleaning process. The method may include cleaning the processing chamber using a second cleaning process different from the first cleaning process. The method may also include monitoring the gas produced during the second cleaning process.