Provided is a method of evaluating cleanliness of a member having a silicon carbide surface, the method including bringing the silicon carbide surface into contact with a mixed acid of hydrofluoric acid, hydrochloric acid and nitric acid; concentrating the mixed acid brought into contact with the silicon carbide surface by heating; subjecting a sample solution obtained by diluting a concentrated liquid obtained by the concentration to quantitative analysis of metal components by Inductively Coupled Plasma-Mass Spectrometry; and evaluating cleanliness of the member having a silicon carbide surface on the basis of a quantitative result of metal components obtained by the quantitative analysis.

A plasma deposition method in which a cover layer is deposited onto the internal walls of an empty plasma chamber by plasma deposition of a precursor mixture comprising (i) one or more hydrocarbon compounds of formula (A), or (ii) one or more C.sub.1-C.sub.3 alkane, C.sub.2-C.sub.3 alkene or C.sub.2-C.sub.3 alkyne compounds: (Formula (A)) wherein: Z.sub.1 represents C.sub.1-C.sub.3 alkyl or C.sub.2-C.sub.3 alkenyl; Z.sub.2 represents hydrogen, C.sub.1-C.sub.3 alkyl or C.sub.2-C.sub.3 alkenyl; Z.sub.3 represents hydrogen, C.sub.1-C.sub.3 alkyl or C.sub.2-C.sub.3 alkenyl; Z.sub.4 represents hydrogen, C.sub.1-C.sub.3 alkyl or C.sub.2-C.sub.3 alkenyl; Z.sub.5 represents hydrogen, C.sub.1-C.sub.3 alkyl or C.sub.2-C.sub.3 alkenyl; and Z.sub.6 represents hydrogen, C.sub.1-C.sub.3 alkyl or C.sub.2-C.sub.3 alkenyl.

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A chemical vapor deposition apparatus includes: a reaction chamber, a reaction area in the upper portion of the reaction chamber, an exhaust area in the bottom portion of the reaction chamber and a pumping apparatus connected to the outside of the reaction chamber. The exhaust area includes an isolating device dividing the exhaust area into an exhaust chamber and a storage chamber. The isolating device has a sidewall with gas openings connecting the exhaust chamber and the storage chamber. The exhaust area further includes a scraping component that can move up and down between the upper end and the lower end of the gas openings.

Embodiments of the present disclosure relate to apparatus and methods for cleaning an exhaust path of a semiconductor process tool. One embodiment provides an exhaust pipe section and a pipe cleaning assembly connected between a semiconductor process tool and a factory exhaust. The pipe cleaning assembly includes a residue remover disposed in the exhaust pipe section. The residue remover is operable to move in the exhaust pipe section to dislodge accumulated materials from an inner surface of the exhaust pipe section.

A method includes identifying deposition thickness property data associated with an amount of material deposited via one or more substrate processing operations of a process recipe performed in a processing chamber. The method further includes determining, based on the deposition thickness property data and a variable clean time relationship of the process recipe, cleaning operation parameters. The method further includes causing, based on the cleaning operation parameters, a cleaning operation in the processing chamber.

A device for removing particles in a gas stream includes a first cylindrical portion configured to receive the gas stream containing a target gas and the particles, a rotatable device disposed within the first cylindrical portion and configured to generate a centrifugal force when in a rotational action to divert the particles away from the rotatable device, a second cylindrical portion coupled to the first cylindrical portion and configured to receive the target gas, and a third cylindrical portion coupled to the first cylindrical portion and surrounding the second cylindrical portion, the third cylindrical portion being configured to receive the diverted particles.

Disclosed herein is an apparatus for cleaning a process kit comprising a body, a cleaning source, and a control system. The body is formed from multiple modules configured to couple to, and receive therein, a process kit part. A plurality of cleaning agents may be sequentially delivered to the body in order to remove the particles disposed on the process part.

The invention relates to an apparatus for subjecting a surface of a substrate to surface reactions of at least a first precursor and a second precursor according to the principles of atomic layer deposition. The apparatus comprises a reaction chamber (1) forming a reaction space (2) for receiving precursor gases reacting on the surface of the substrate. The apparatus further comprises a substrate support (3) for holding the substrate; a dielectric plate (4); and an electrode (7) coupled to a voltage source (8) to induce voltage to the electrode (7) for generating electric discharge to the reaction space (2). The dielectric plate (4) is arranged between the substrate support (3) and the electrode (7) and such that the reaction space (2) is arranged between the substrate support (3) and the dielectric plate (4).

According to one embodiment, a processing system includes a first vessel, a destination part to be transported, and a liquid sending part. The first vessel gathers a product being liquid temporarily. The destination part to be transported includes a second vessel to gather the product transported from the first vessel. The liquid sending part includes a first portion. The first portion includes a nozzle and a first mechanism. The nozzle discharges the product provided between the first vessel and the destination part to be transported. The first mechanism is purged by an inactive gas.

Embodiments of the present disclosure relate to apparatus and methods for cleaning an exhaust path of a semiconductor process tool. One embodiment provides an exhaust pipe section and a pipe cleaning assembly connected between a semiconductor process tool and a factory exhaust. The pipe cleaning assembly includes a residue remover disposed in the exhaust pipe section. The residue remover is operable to move in the exhaust pipe section to dislodge accumulated materials from an inner surface of the exhaust pipe section.