A film deposition method uses a film deposition apparatus including a source gas supply part and a cleaning gas supply part. In the method, a source gas is adsorbed on a substrate by supplying the source gas from the source gas supply part without supplying a purge gas into the cleaning gas supply part. A reaction product is deposited on the substrate by supplying a reaction gas reactable with the source gas to the substrate on which the source gas is adsorbed without supplying the purge gas into the cleaning gas supply part.

The present disclosure provides a technique that includes: loading a substrate into a process chamber in which the substrate is processed; and processing the substrate by supplying a first inert gas to a peripheral portion of the substrate and simultaneously supplying a mixed gas of a second inert gas different from the first inert gas and a process gas to a surface of the substrate.

Disclosed are methods and systems for depositing layers comprising a transition metal and a group 13 element. The layers are formed onto a surface of a substrate. The deposition process may be a cyclical deposition process. Exemplary structures in which the layers may be incorporated include field effect transistors, VNAND cells, metal-insulator-metal (MIM) structures, and DRAM capacitors.

There is provided a technique that includes: (a) lowering a temperature in a process chamber supplied with a cleaning gas containing a halogen element while being heated to a first temperature, from the first temperature to a second temperature equal to or lower than a temperature at which substrate processing is performed in the process chamber, while vacuum-exhausting an inside of the process chamber; and (b) after (a), supplying a gas containing a water vapor into the process chamber while vacuum-exhausting the inside of the process chamber, to cause the halogen element remaining in the process chamber to react with the water vapor.

A purge baffle for a substrate support includes an annular ring configured to surround an outer perimeter around the substrate support in a volume below the substrate support and a first portion. The first portion includes a plenum defined below the first portion and outside of the annular ring in the volume below the substrate support and a plurality of openings that provide respective flow paths from a region above the first portion into the plenum. At least a first opening of the plurality of openings has a first conductance and at least a second opening of the plurality of openings has a second conductance that is different than the first conductance.

A plasma processing apparatus includes: a processing container having a cylindrical shape; a pair of plasma electrodes arranged along the longitudinal direction of the processing container while facing each other; and a radio-frequency power supply configured to supply a radio-frequency power to the pair of plasma electrodes. In the pair of plasma electrodes, an inter-electrode distance at a position distant from a power feed position to which the radio-frequency power is supplied is longer than an inter-electrode distance at the power feed position.

The present application discloses a thin-film deposition method and a semiconductor device. The thin-film deposition method in the present application includes: providing a substrate; performing thin-film deposition on the substrate by using a thin-film deposition technology to form a first deposited layer; introducing a purge gas to perform impurity purge treatment on the first deposited layer to form a purified deposited layer; and forming a thin-film layer by the purified deposited layer. In the thin-film deposition method of the present application, the thin-film deposition technology is adopted to form the deposited layer, and impurity purge treatment is performed on the deposited layer.

Atomic layer deposition (ALD) processes for forming Group VA element containing thin films, such as Sb, Sb—Te, Ge—Sb and Ge—Sb—Te thin films are provided, along with related compositions and structures. Sb precursors of the formula Sb(SiR.sup.1R.sup.2R.sup.3).sub.3 are preferably used, wherein R.sup.1, R.sup.2, and R.sup.3 are alkyl groups. As, Bi and P precursors are also described. Methods are also provided for synthesizing these Sb precursors. Methods are also provided for using the Sb thin films in phase change memory devices.

The present invention relates to an internal chamber processing method, and more particularly, to an internal chamber processing method for performing processing on a chamber and a component inside the chamber. Disclosed is an internal chamber processing method for processing the inside of a chamber in which substrate processing is performed, the method including a pressurizing operation (S100) of raising a pressure inside a chamber to a first pressure (P.sub.1) higher than the atmospheric pressure by using a pressurized gas and a depressurizing operation of lowering the pressure inside the chamber from the first pressure (P.sub.1) to a second pressure (P.sub.2) after the pressurizing operation (S100). The pressurizing operation (S100) and the depressurizing operation (S200) are performed in a state in which a substrate to be processed is removed from the inside of the chamber.

Implementations of the present disclosure generally relate to one or more flow ratio controllers and one or more gas injection inserts in the semiconductor processing chamber. In one implementation, an apparatus includes a first flow ratio controller including a first plurality of flow controllers, a second flow ratio controller including a second plurality of flow controllers, and a gas injection insert including a first portion and a second portion. The first portion includes a first plurality of channels and the second portion includes a second plurality of channels. The apparatus further includes a plurality of gas lines connecting the first and second pluralities of flow controllers to the first and second pluralities of channels. One or more gas lines of the plurality of gas lines are each connected to a channel of the first plurality of channels and a channel of the second plurality of channels.