The invention discloses equipment and preparation method for open and continuous growth of a carbon nanomaterial. The equipment comprises a metal foil tape feeding system, a CVD system and a collection system. The method includes continuously conveying a metal foil tape pretreated or not into the CVD system via the metal foil tape feeding system, depositing a required carbon nanomaterial on the surface of the metal foil tape by CVD, directly collecting by the collection system or directly post-treating the carbon nanomaterial by a post-treatment system, and even directly producing a end product of the carbon nanomaterial. All the systems in the invention are arranged in the open atmosphere rather than an air-isolated closed space. The invention can realize round-the-clock continuous operation to greatly improve the production efficiency of carbon nanomaterials.

A method for particle abatement in a semiconductor apparatus is provided. In a preferred embodiment, the method comprises processing a substrate in a process chamber of the semiconductor processing apparatus. The processing comprises loading the substrate in the process chamber having one or more inner surfaces, providing a reaction gas mixture to the process chamber, thereby forming a substrate film and a chamber wall film, and loading the substrate out of the process chamber. The method further comprises repeating the processing step one or more times until the chamber wall film has reached a pre-determined chamber wall film thickness, upon which exposing the inner surfaces to an ambient, thereby modifying at least an upper portion of the chamber wall film, thus reducing a probability of particle formation in the process chamber.

A semiconductor processing apparatus is disclosed. The apparatus may include, a reaction chamber and a susceptor dispose in the reaction chamber configured for supporting a substrate thereon, the susceptor comprising a plurality of through-holes in an axial direction of the susceptor. The apparatus may also include, a plurality of lift pins, each of the lift pins being disposed within a respective through-hole, and at least one gas transmitting channel comprising one or more gas channel outlets, the one or more gas channel outlets being disposed proximate to the through-holes. Methods for processing a substrate within a reaction chamber are also disclosed.

A sealing structure of a gas supply line assembly connected to a processing chamber for processing a substrate in a vacuum atmosphere is provided. The sealing structure includes a first pipe member constituting the gas supply line assembly and having an end surface where an opening communicating with the processing chamber is formed, a second pipe member constituting the gas supply line assembly and having a facing surface facing the end surface of the first pipe member, and a sealing member made of an elastomer disposed between the end surface of the first pipe member and the facing surface of the second pipe member to surround the opening. The sealing structure further includes a sheet-shaped porous member disposed between the end surface of the first pipe member and the facing surface of the second pipe member to surround a vicinity of the sealing member.

Disclosed is a powder atomic layer deposition equipment with a quick release function, comprising a vacuum chamber, a shaft sealing device, and a driving unit connected to the shaft sealing device. The vacuum chamber is connected to the shaft sealing device, and an enclosed space is formed between the vacuum chamber and the shaft sealing device. At least one air extraction line is located in the shaft sealing device and fluidly connected to the enclosed space, the air extraction line being used in pumping gas out from the enclosed space to fix the vacuum chamber to the shaft sealing device so that the drive unit rotates the vacuum chamber via the shaft sealing device to facilitate the formation of a uniform thin film on powder surface. When the pumping stops, the vacuum chamber can be quickly released from the shaft sealing device to improve the process efficiency and convenience of use.

An apparatus for atomic scale processing is provided. The apparatus may include a reactor (100) and an inductively coupled plasma source (10). The reactor may have inner (154) and outer surfaces (152) such that a portion of the inner surfaces define an internal volume (156) of the reactor. The internal volume of the reactor may contain a fixture assembly (158) to support a substrate (118) wherein the partial pressure of each background impurity within the internal volume may be below 10.sup.−6 Torr to reduce the role of said impurities in surface reactions during atomic scale processing.

A reaction chamber may comprise a reaction chamber volume enclosed within the reaction chamber; a susceptor configured to support a substrate disposed in the reaction chamber volume; a reaction space above the susceptor, and a lower chamber space below the susceptor, within the reaction chamber volume; and/or a sealing system causing the reaction space and the lower chamber space to be at least partially fluidly separate. A sealing system may comprise a spacer plate surrounding and coupled to the susceptor; and/or a spring coupled to the spacer plate and the susceptor having a spring bias toward a compressed position or an extended position, such that the spring bias facilitates creation of at least a partial seal between the spacer plate and the susceptor, causing at least partial fluid separation between the reaction space and the lower chamber space as the susceptor moves up and down within the reaction chamber.

The invention relates to a method and an apparatus for the plasma treatment of containers. The essential aspect according to the method according to the invention is that, after the plasma treatment at the plasma station and before the container is filled, at least the container interior of the container is at least partially ventilated with a sterilization medium, i.e. is loaded with a sterilization medium.

The present disclosure relates to a semiconductor processing apparatus having a reaction chamber which can include a baseplate having an opening; a moveable substrate support configured to support a substrate; a movement element configured to move a substrate held on the substrate support towards the opening of the baseplate; a plurality of gas inlets positioned above and configured to direct gas downwardly towards the substrate support; and a sealing element configured to form a seal between the baseplate and the substrate support, the seal positioned at a greater radial distance from a center of the substrate support than an outer edge of the substrate support. In some embodiments, the sealing element can also include a plurality of apertures extend through the sealing element, the apertures configured to provide a flow path between a position below the sealing element to a position above the sealing element.

Methods and systems for forming a structure including multiple carbon layers and structures formed using the methods or systems are disclosed. Exemplary methods include forming a first carbon layer with an initial first flowability and a second carbon layer with an initial second flowability, wherein first flowability is less than second flowability.