Treatment chamber (C) for a chemical vapor deposition (CVD) reactor, comprising, within a body (B) defining an enclosure (E) under partial vacuum, a system (3) for injecting reactive species with a view to being deposited on a substrate (8) placed on a support element (5), and a thermal control system (2) for regulating the temperature of the injection system (3) or keeping it substantially constant, this thermal control system (2) having an interface zone (ZI) with the injection system (3). The treatment chamber (C) further comprises, in the interface zone (ZI), at least one thermal transfer zone (ZT) that is (i) insulated from the enclosure under partial vacuum (E) by an insulating barrier to the pressure and to the diffusion of contaminating species and (ii) filled with a thermal interface material (10). Application for carrying out CVD depositions, especially pulsed CVD depositions.

The present invention discloses a coating device including: a first shell, having a top portion and a side portion; and a second shell, accommodated in the first shell and at least partially divergently extending downwards from the top portion of the first shell. The first shell and the second shell define a first space in between, the second shell defines a second space, and the first space surrounds the second space and the two are not in communication.

Embodiments of the present disclosure disclose a plasma process apparatus with low particle contamination and a method of operating the same, wherein the plasma process apparatus comprises a chamber body and a liner, wherein a dielectric window is provided above the liner; the chamber body, the liner, and the dielectric window enclose a reaction space; a base for placing a wafer is provided at a bottom portion inside the reaction space; a vacuum pump device for pumping a gas out of the reaction space and maintaining a low pressure therein is provided below the base; a shutter for shuttering between an opening on a chamber body sidewall and an opening on a liner sidewall is provided inside the chamber body, for blocking contamination particles in the gas from flowing from a transfer module to the reaction space; a groove is provided at a lower portion of the liner, wherein a flowing space enclosed by a liner outer wall below the shutter and a chamber body inner wall is in communication with an inner space of the liner via the groove to form a gas flow path, such that the contamination particles entering the flowing space are pumped away by the vacuum pump device via the gas flow path. The present disclosure may not only keep the current wafer free from being contaminated, but also may reduce contamination for a next wafer transfer; besides, it enables introduction of clean air to make the contamination particles carried out of the reaction space with a more significant effect and a higher efficiency.

Homogeneous and transparent protective coatings for precious metals and copper alloys and techniques for forming the coatings on precious metals and copper alloys are provided. In an embodiment, ionic oxide film is deposited onto a surface of a substrate including a metal, such as a precious metal and/or a copper alloy, using pulsed chemical vapor deposition (PCVD). A homogenous and transparent solid film based on ionic oxide is formed on the surface of the substrate in response to the depositing.

The present disclosure relates to an apparatus for processing substrate including a supporting unit for supporting a substrate, a lid disposed apart from the supporting unit in an upward direction, a first gas injection unit coupled to the lid to inject a first gas into a first region, a second gas injection unit coupled to the lid to inject a second gas into a second region, a purge gas unit coupled to the lid to inject a purge gas into a third region disposed between the first region and the second region, and a rotation unit for rotating the supporting unit.

A thin film deposition apparatus mounted with a Raman analysis system is discussed. The thin film deposition apparatus includes a reaction chamber providing an inner space for forming a thin film. An opening is formed on the thin film deposition apparatus to be connected to the reaction chamber, and the opening is closed by a window through which light can be transmitted.

An apparatus and method for protecting a gas container interior, where an inlet and exhaust manifold include a port assembly attachable to a port of the gas container is provided, the gas container interior is exposed to sequential self-saturating surface reactions by sequential inlet of reactive gases via the port assembly and the port into the gas container interior, and reaction residue is pumped via the port and the port assembly out from the gas container.

Embodiments described herein relate to apparatus and techniques for mechanical isolation and thermal insulation in a process chamber. In one embodiment, an insulating layer is disposed between a dome assembly and a gas ring. The insulating layer is configured to maintain a temperature of the dome assembly and prevent thermal energy transfer from the dome assembly to the gas ring. The insulating layer provides mechanical isolation of the dome assembly from the gas ring. The insulating layer also provides thermal insulation between the dome assembly and the gas ring. The insulating layer may be fabricated from a polyimide containing material, which substantially reduces an occurrence of deformation of the insulating layer.

A substrate processing apparatus includes a vacuum container, a placing part provided inside the vacuum container and having a placing surface on which a substrate is placed, and a ceiling member provided above the placing part. The ceiling member includes a fixed member fixed to the vacuum container, a movable member attached to the fixed member and having a first facing surface facing the placing surface, a spacer sandwiched between the fixed member and the movable member, a first seal member provided between the fixed member and the spacer, a second seal member provided between the movable member and the spacer, and a plurality of adjustment bolts screwed into the fixed member through the movable member.

A deposition or cleaning apparatus including an outer vacuum chamber and a reaction chamber inside the outer chamber forming a double chamber structure. The reaction chamber is configured to move between a processing position and a lowered position inside the outer vacuum chamber, the lowered position being for loading one or more substrates into the reaction chamber