A raw material gas supply system for supplying a raw material gas generated by vaporizing a solid raw material to a processing apparatus, includes a vaporization device configured to vaporize the solid raw material to generate the raw material gas, a delivery mechanism configured to deliver a dispersion containing the solid raw material dispersed in a liquid from a storage container storing the dispersion to the vaporization device, and a separation mechanism configured to separate the solid raw material from the dispersion in the vaporization device.

Systems and methods related to temperature zone control systems can include a reactant source cabinet that is configured to be at least partially evacuated, a vessel base that is configured to hold solid source chemical reactant therein, and a lid that is coupled to a distal portion of the vessel base. The lid may include one or more lid valves. The system may further include a plurality of gas panel valves that are configured to deliver gas from a gas source to the vessel. The system may include a heating element that is configured to heat the one or more lid valves. The system may include a heat shield, a first portion of which is disposed between the one or more lid valves and the vessel base. A second portion of the heat shield may be disposed between the first heating element and the plurality of gas panel valves.

A processing method is implemented in a substrate processing system. The system includes: a processing container including a stage on which a substrate is placed; an attachment portion to which a raw material container is detachably attached; a heater configured to produce a raw material gas; a carrier gas supplier configured to supply a carrier gas to the raw material container; a supply line configured to supply the raw material gas with the carrier gas; a controller configured to control at least one of the heater and a flow rate of the carrier gas supplied from the carrier gas supplier; and a determination portion configured to determine an initial filling state of the raw material container attached to the attachment portion. The processing method includes determining the initial filling state of the raw material container based on an operation record and a table.

A raw material supply system includes: a first storage part configured to store a solution obtained by dissolving a first solid raw material in a solvent or a dispersion obtained by dispersing the first solid raw material in the solvent; a second storage part configured to store the solution or the dispersion transported from the first storage part; a detection part configured to detect an amount of the solution or the dispersion stored in the first storage part; and a heating part configured to heat a second solid raw material formed by removing the solvent from the solution or the dispersion stored in the second storage part.

A method of making an atomic layer nanoribbon that includes forming a double atomic layer ribbon having a first monolayer and a second monolayer on a surface of the first monolayer, wherein the first monolayer and the second monolayer each contains a transition metal dichalcogenide material, oxidizing at least a portion of the first monolayer to provide an oxidized portion, and removing the oxidized portion to provide an atomic layer nanoribbon of the transition metal dichalcogenide material. Also provided are double atomic layer ribbons, double atomic layer nanoribbons, and single atomic layer nanoribbons prepared according to the method.

A film formation apparatus includes a stage for having a substrate thereon; a mist generation source that generates a mist of a solution containing at least water and in which a material for forming a film on the substrate is dissolved; a supply path that conveys the mist toward the substrate on the stage by a flow of a carrier gas; and a heater that heats at least a part of the supply path. The part of the supply path heated by the heater is provided as a mist heating section in which infrared rays are radiated from an inner surface of the supply path toward the mist. The inner surface of the supply path in the mist heating section is coated with a coating layer containing at least one of an oxide and a hydroxide of an element present in the mist.

One object of the present invention is to provide a method for producing a metal nitride film that has a high film formation rate and excellent productivity. The present invention provides a method for producing a metal nitride film in which a metal nitride film is formed on at least a part of a surface of a substrate to be processed by chemical vapor deposition using a metal compound raw material and a nitrogen-containing compound raw material, wherein the nitrogen-containing compound raw material contains hydrazine and ammonia.

A method comprises transporting a first stream of a carrier gas to a delivery device that contains a liquid precursor compound. The method further comprises transporting a second stream of the carrier gas to a point downstream of the delivery device. The first stream after emanating from the delivery device and the second stream are combined to form a third stream, such that the dew point of the vapor of the liquid precursor compound in the third stream is lower than the temperature of the plumbing that transports the vapor to a CVD reactor or a plurality of CVD reactors. The flow direction of the first stream, the flow direction of the second stream and the flow direction of the third stream are unidirectional and are not opposed to each other.

A semiconductor film, a sheet like object, and a semiconductor device are provided that have inhibited semiconductor properties, particularly leakage current, and excellent withstand voltage and heat dissipation. A crystalline semiconductor film or a sheet like object includes a corundum structured oxide semiconductor as a major component, wherein the film has a film thickness of 1 μm or more. Particularly, the semiconductor film or the object includes a semiconductor component of oxide of one or more selected from gallium, indium, and aluminum as a major component. A semiconductor device has a semiconductor structure including the semiconductor film or the object.

A flow through valve can satisfy the manufacturing constraints encountered when handling materials at high temperatures and low pressures, for example during semiconductor thin-film manufacturing using techniques such as vapor transport deposition.