A source of material for use in a deposition system includes one or more baffles or equivalent structures within the source. The baffles provide for increased concentration of material entrained in a carrier gas that is passed through and emitted by the source.

A bubbler apparatus may include a container, a lid, a sealing member and at least one routing member. As the lid is tightened to the container and the sealing member is compressed, the routing member(s) does not contact the inside bottom surface of the container. Instead, there is a small gap between the routing member and the bottom surface of the container. The routing member may compress the substance in the container that the gas is saturated with or may slice through the substance.

A semiconductor fabrication apparatus can include a plurality of reaction containers that can be coupled together to provide a plurality of sequential respective stages in a process of generating a process gas for semiconductor fabrication, where each reaction container can include a respective semiconductor fabrication solid source material in a respective configuration that is different than in others of the reaction containers.

Static thermal chemical vapor deposition treatment processes and static thermal chemical vapor deposition treatment systems are disclosed. The process includes providing an enclosed chamber configured to produce a material on a surface of an article within the enclosed chamber in response thermal energy being applied to a gaseous precursor, providing a liquid handling system in selective fluid communication with the enclosed chamber, flowing a liquid precursor through the liquid handling system, converting the liquid precursor to the gaseous precursor, and producing the material on the surface of the article in response to the thermal energy being applied to the gaseous precursor within the enclosed chamber. The system includes the enclosed chamber and the liquid handling system.

Certain exemplary embodiments can provide a system, which can comprise an ultra-thin polymer ceramic composite separator. The ultra-thin polymer ceramic composite separator can comprise Li-ion conducting ceramic material. The ceramic composite separator has a columnar grained microstructure. The ultra-thin polymer ceramic composite separator can comprise a single or bi-layer combination of LiPON, LATP, garnets, lithium sulfides, or Li.sub.1+2xZr.sub.2−zCa(PO.sub.4).sub.3.

A method of forming a silicon layer includes introducing a source gas containing a precursor material and a carrier gas into a reactor, controlling a gas flow of the source gas through a first main flow controller unit in response to a change of a concentration of the precursor material in the source gas, introducing an auxiliary gas into the reactor, and controlling a gas flow of the auxiliary gas through a second main flow controller unit such that a total gas flow of the source gas and the auxiliary gas into the reactor is held constant when the gas flow of the source gas changes.

STEP 1 (Pressure increasing step) increases pressure within a raw material container to first pressure by supplying carrier gas to the inside of the raw material container by PCV. STEP 2 (Pressure decreasing step) decreases the pressure within the raw material container to second pressure by operating an exhaust device and discarding the raw material gas from a raw material gas supply pipe via an exhaust bypass pipe. STEP 3 (Stabilization step) stabilizes the vaporization efficiency for vaporizing the raw material inside the raw material container by operating the exhaust device and discarding the raw material gas while introducing the carrier gas into the raw material container. STEP 4 (Film forming step) supplies the raw material gas to the inside of the processing container via the raw material gas supply pipe and deposits a thin film on a wafer by CVD.

A photodetector based on PtSe.sub.2 and a silicon nanopillar array includes a PMMA light-transmitting protective layer, a graphene transparent top electrode, a silicon nanopillar array structure coated with few-layer PtSe.sub.2, and metal electrodes of the graphene transparent top electrode and the silicon nanopillar array structure. A method for preparing the photodetector includes steps of: preparing graphene with a CVD method; preparing a silicon nanopillar array structure through dry etching; coating few-layer PtSe.sub.2 on surfaces of the silicon nano-pillar array structure through laser interference enhanced induction CVD; preparing graphene transparent top electrode; and magnetron-sputtering metal electrodes. The photodetector prepared by the present invention has a detection range from visible light to near-infrared wavebands. The silicon nanopillar array structure enhances light absorption of the detector, so that the detector has high sensitivity, simple structure and strong practicability.

A ruthenium film forming method includes a deposition process of introducing a mixed gas of a ruthenium carbonyl gas and a CO gas into a processing vessel 1 by supplying the CO gas as a carrier gas from a CO gas container 43 configured to contain the CO gas into a film forming source container 41 configured to contain ruthenium carbonyl in a solid state as a film forming source material, and forming ruthenium film by decomposing the ruthenium carbonyl on a wafer W; and a CO gas introduction process of bringing the CO gas into contact with a surface of the wafer W by introducing the CO gas directly into the processing vessel 1 from the CO gas container 43 after stopping the introducing of the mixed gas into the processing vessel 1. The deposition process and the CO gas introduction process are repeated multiple times.

A method for material deposition is described in several embodiments. According to one embodiment, the method includes providing a substrate defining features to receive a deposition of material, initiating a flow of a Ru carbonyl precursor to the substrate, the Ru carbonyl precursor decomposing within the defined features such that a Ru metal film is deposited on surfaces of the defined features and CO gas is released, and stopping the flow of the Ru carbonyl precursor to the substrate. The method further includes flowing additional CO gas to the substrate after stopping the flow of the Ru carbonyl precursor to the substrate, and repeatedly cycling between process steps of flowing the Ru carbonyl precursor to the substrate and flowing the additional CO gas to the substrate. In one embodiment, the Ru carbonyl precursor contains Ru.sub.3(CO).sub.12.