The present disclosure is generally directed to a solid source precursor delivery system. More specifically, the present disclosure is directed to a solid source precursor vessel that can be utilized to vaporize a supply of solid precursor stored within the vessel. The disclosed source vessel utilizes a plurality of individual cavities or pockets within the interior of the vessel. Each individual pocket may be loaded with precursor. In an arrangement, the pockets may be loaded with pre-formed blocks of compressed precursor material that typically have a higher density than was previously achieved when packing solid precursor within a source vessel. The increased density of the solid precursor material increases a capacity of the source vessel resulting in longer intervals between replacement and/or refilling the source vessel.

A method for depositing parylene onto a substrate includes utilizing a vaporization chamber and a pyrolysis chamber to crack a dimer into a monomer gas, directly ionizing the monomer gas by passing the monomer gas through a plasma generation chamber comprising plasma prior to injection of the monomer gas into a deposition chamber, and polymerizing the ionized monomer in the deposition chamber to create a polymer and a protective coating on a substrate.

The present disclosure relates to an apparatus and a method of delivering a liquid to a downstream process. The apparatus can include a vessel configured to retain a liquid, a bellow in fluid communication with the vessel to receive the liquid from the vessel and in fluid communication with the downstream process to deliver the liquid. The bellow can be exposed to a constant external pressure and configured to deliver the liquid under the constant external pressure when the bellow stops receiving the liquid from the vessel. In some embodiments, the constant external pressure is atmospheric pressure. The bellow can include a pressure deformable material. The apparatus can further include a vaporizer configured to receive the liquid and to produce a vapor, one or more chemical vapor deposition chambers configured to receive the vapor and to hold a substrate for deposition of a component of the vapor on a substrate.

A dry powder MOCVD vapor source system is disclosed that utilizes a gravimetric powder feeder, a feed rate measurement and feeder control system, an evaporator and a load lock system for continuous operation for thin film production, particularly of REBCO type high temperature superconductor (HTS) tapes.

Herein disclosed are systems and methods related to solid source chemical sublimator vessels and corresponding deposition modules. The solid source chemical sublimator can include a housing configured to hold solid chemical reactant therein. A lid may be disposed on a proximal portion of the housing. The lid can include a fluid inlet and a fluid outlet and define a serpentine flow path within a distal portion of the lid. The lid can be adapted to allow gas flow within the flow path. The solid source chemical sublimator can include a filter that is disposed between the serpentine flow path and the distal portion of the housing. The filter can have a porosity configured to restrict a passage of a solid chemical reactant therethrough.

Herein disclosed are systems and methods related to solid source chemical sublimator vessels and corresponding deposition modules. The solid source chemical sublimator can include a housing configured to hold solid chemical reactant therein. A lid may be disposed on a proximal portion of the housing. The lid can include a fluid inlet and a fluid outlet and define a serpentine flow path within a distal portion of the lid. The lid can be adapted to allow gas flow within the flow path. The solid source chemical sublimator can include a filter that is disposed between the serpentine flow path and the distal portion of the housing. The filter can have a porosity configured to restrict a passage of a solid chemical reactant therethrough.

Thick, inorganic coatings can be deposited on a polarizer by chemical vapor deposition. In one embodiment, the method can comprise activating a surface of the polarizer with an oxygen plasma in an oven; injecting a solution including tetrakis(dimethylamino)silane dissolved in cyclohexane and water into the oven; and vapor depositing silicon dioxide onto the polarizer. These three steps can be repeated multiple times until desired thickness is attained.

To provide a cobalt complex which is liquid at room temperature, useful for producing a cobalt-containing thin film under conditions without using an oxidizing gas. A cobalt complex represented by the following formula (1): ##STR00001##
wherein L.sup.1 and L.sup.2 represent a unidentate amide ligand of the following formula (A), a bidentate amide ligand of the following formula (B) or a hetero atom-containing ligand of the following formula (C): ##STR00002##
wherein R.sup.1 and R.sup.2 represent a C.sub.1-6 alkyl group or a tri(C.sub.1-6 alkyl)silyl group, and the wave line represents a binding site to the cobalt atom; ##STR00003##
wherein R.sup.3 represents a tri(C.sub.1-6 alkyl)silyl group, R.sup.4 and R.sup.5 represent a C.sub.1-4 alkyl group, and X represents a C.sub.1-6 alkylene group; ##STR00004##
wherein R.sup.6 and R.sup.8 represent a C.sub.1-6 alkyl group, R.sup.7 represents a hydrogen atom or a C.sub.1-4 alkyl group, Y represents an oxygen atom or NR.sup.9, Z represents an oxygen atom or NR.sup.10, and R.sup.9 and R.sup.10 independently represent a C.sub.1-6 alkyl group.

A method of forming a single atomic layer nanoribbon on a substrate by subjecting two or more precursor powders to a moisturized gas flow at a temperature sufficient to deposit the single atomic layer nanoribbon on the substrate via chemical vapor deposition, the single atomic layer nanoribbon having a transition metal dichalcogenide material and the substrate including fluorophlogopite mica, highly oriented pyrolytic graphite, or a combination thereof. Also described are single atomic layer nanoribbons prepared by the method.

A sequential infiltration synthesis apparatus comprising: a reaction chamber constructed and arranged to hold at least a first substrate; a precursor distribution and removal system to provide to and remove from the reaction chamber a vaporized first or second precursor; and, a sequence controller operably connected to the precursor distribution and removal system and comprising a memory provided with a program to execute infiltration of an infiltrateable material provided on the substrate when run on the sequence controller by: activating the precursor distribution and removal system to provide and maintain the first precursor for a first period T1 in the reaction chamber; activating the precursor distribution and removal system to remove a portion of the first precursor from the reaction chamber for a second period T2; and, activating the precursor distribution and removal system to provide and maintain the second precursor for a third period T3 in the reaction chamber. The program in the memory is programmed with the first period T1 longer than the second period T2.