A process for making low resistivity CVC silicon carbide. Applicants have developed a better process for adding nitrogen to silicon carbide which has the safety economic advantages of doping with N.sub.2 with the ease of N.sub.2 release advantages of using NH.sub.3. Preferred embodiments of the present invention include a NH.sub.3 generator with a source of H.sub.2 and a source of N.sub.2 and an arc discharge apparatus adapted to produce NH.sub.3 gas from a combination of the H.sub.2 and N.sub.2 sources.

A processing system for producing a product material from a liquid mixture includes an array of one or more power jet modules adapted to jet the liquid mixture into one or more streams of droplets and force the one or more streams of droplets into the processing system adapted to process the one or more streams of droplets into the product material. A method for producing a product material, from a liquid mixture on a processing system includes moving each of the one or more power jet modules and be connected to an opening of a dispersion chamber, opening one or more doors of the one or more power jet modules, processing the one or more streams of droplets inside a reaction chamber, closing the one or more doors of the power jets modules and moving each of the one or more power jet modules in a second direction.

A reactor for coating particles includes a stationary vacuum chamber to hold a bed of particles to be coated, a chemical delivery system, and a paddle assembly. The paddle assembly includes a rotatable drive shaft and a first plurality of paddles and a second plurality of paddles that extend radially from the drive shaft. The spacing, cross-sections, and oblique angles of the paddles are such that orbiting of the paddles causes the first plurality of paddles and the second plurality of paddles to displace substantially equal volumes in opposite directions in the lower portion of the stationary vacuum chamber.

An apparatus and method for generating a vapor with a compact vaporizer design and exposing the gas and liquid mixture for vaporization to a reduced maximum temperature. A gas and liquid droplet flow through a metal housing configured to heat the gas and liquid droplet mixture flow for vaporization includes directing the gas and liquid droplet mixture through an inlet of the metal housing and flowing the gas through a tortious flow path defined by a plurality of tubular flow passageways arranged around a central axis for vaporization. Residual liquid droplets may be further vaporized by flowing through a second metal housing configured to heat the gas and liquid droplet mixture for vaporization and having a similar construction to the first metal housing and providing a second tortious flow path.

Apparatus and methods for supplying a vapor to a processing chamber such as a film deposition chamber are described. The vapor delivery apparatus comprises an inlet conduit and an outlet conduit, in fluid communication with an ampoule. A needle valve device restricts flow through the outlet conduit.

A method and composition for depositing a silicon oxide film in an atomic layer deposition process at one or more temperatures of 600° C. or greater are provided. In one aspect, there is provided a method to deposit a silicon oxide film or material on a substrate in a reactor at one or more temperatures ranging from about 600° C. to 1000° C.; comprising the steps of: introducing into the reactor at least one halidocarbosilane precursor selected from the group of compounds having Formulae I and II described herein; purging the reactor with a purge gas; introducing an oxygen-containing source into the reactor; and purging the reactor with a purge gas; and wherein the steps are repeated until a desired thickness of silicon oxide is deposited.

A material deposition system comprises a precursor source and a chemical vapor deposition apparatus in selective fluid communication with the precursor source. The precursor source configured to contain at least one metal-containing precursor material in one or more of a liquid state and a solid state. The chemical vapor deposition apparatus comprises a housing structure, a distribution manifold, and a substrate holder. The housing structure is configured and positioned to receive at least one feed fluid stream comprising the at least one metal-containing precursor material. The distribution manifold is within the housing structure and is in electrical communication with a signal generator. The substrate holder is within the housing structure, is spaced apart from the distribution assembly, and is in electrical communication with an additional signal generator. A microelectronic device and methods of forming a microelectronic device also described.

Direct liquid injection systems and vapor deposition systems including direct liquid injection systems are disclosed. Exemplary direct liquid injection systems and related vapor deposition systems can be configured for forming vanadium containing layer on a substrate by cyclical deposition processes.

A method for producing a product including an oxide film of a second metal that is doped with a first metal includes generating a mist from a raw material solution in which both the first metal and the second metal are dissolved, and supplying the mist to a surface of a substrate to form the oxide film on the surface of the substrate. A pH of the raw material solution is less than 7.

The present specification provides an organic group 4 metal precursor compound and a method for forming a thin film using the same.