A method of depositing silicon carbide on a preform to form a ceramic matrix composite comprises placing the preform into a reaction vessel, removing air from the reaction vessel and backfilling the reaction vessel with an inert gas to an operating pressure. The reaction vessel and the preform are heated to an operating temperature. A carrier gas and precursor materials are heated to a preheat temperature outside of the reaction vessel. The carrier gas and the precursor materials are introduced to the reaction vessel in a specified ratio. Off gasses, the precursor materials that are unspent, and the carrier gas are removed from the reaction vessel to maintain the specified ratio of the precursor materials in the reaction vessel.

A thin film deposition system is disclosed in order to form a thin film on a substrate. The thin film deposition system comprises a hydrogen peroxide source. The hydrogen peroxide source comprises an electrochemical cell that converts a hydrogen gas to a hydrogen ion gas. The electrochemical cell converts an oxygen gas and water into a liquid phase complex. The liquid phase complex reacts with the hydrogen ion gas to form hydrogen peroxide.

A coated cutting tool includes a substrate and a hard film on coated on the substrate. The hard film contains a complex nitride of Al and Cr. The hard film includes aggregates of columnar grains grown on the substrate along the thickness of the film. The nitride has an Al content of 60 atom % or more, a Cr content of 10 atom % or more, and a total content of Al and Cr of 90 atom % or more relative to the total amount of metal and metalloid elements. The complex nitride has the highest peak intensity assigned to crystal plane (311) of an fcc structure in X-ray diffractometry. In the hard film, the ratio of an X-ray diffraction intensity of plane (311) to the intensities of the other planes is 1.30 or more. A method and a system are also provided for manufacturing the coated cutting tool by chemical vapor deposition.

Provided is a hot filament CVD device capable of easily disposing multiple base materials in a chamber. A hot filament CVD device includes a chamber, multiple filaments, multiple base material supports supporting respective multiple base materials, and a table. The multiple base material supports can be inserted into the chamber in a predetermined insertion direction through an opening, and support the corresponding multiple base materials so that the multiple base materials are disposed at intervals in the insertion direction. The table has a mounting surface on which the multiple base material supports are allowed to be mounted allowing the multiple base materials to be disposed facing the corresponding multiple filaments, and supports the multiple base material supports inside the chamber while allowing the multiple base material supports to be disposed adjacent to each other in a chamber width direction.

The disclosure describes techniques for forming hard magnetic materials including α″-Fe.sub.16N.sub.2 using chemical vapor deposition or liquid phase epitaxy and hard materials formed according to these techniques. A method comprises heating an iron source to form a vapor comprising an iron-containing compound; depositing iron from the vapor comprising the iron-containing compound and nitrogen from a vapor comprising a nitrogen-containing compound on a substrate to form a layer comprising iron and nitrogen; and annealing the layer comprising iron and nitrogen to form at least some crystals comprising α″-Fe.sub.16N.sub.2.

The invention relates to a device (1) and method for applying a carbon layer, in particular a diamond layer, to a substrate (2, 2a) by means of chemical vapour deposition, comprising a deposition chamber (3) into which a process gas, in particular molecular hydrogen and/or a mixture of molecular hydrogen and a carbon-containing gas, such as methane can be supplied, wherein a gas inlet and gas activation element (7) is provided in the form of a hollow body with a flow channel (7b) for the process gas, a wall (7a) surrounding the flow channel (7b), and an outlet opening (16) feeding from the flow channel (7b) into the deposition chamber (3), and a heating device (8) is provided for heating the wall (7a) of the gas inlet and gas activation element (7).

A device for depositing at least one radical chalcogenide thin film on an element to be treated including an intake area and a diffusion area receiving the element to be treated, the intake area and the diffusion area extending along a longitudinal axis, a radical hydrogen source connected to the intake area, pumping means, means for injecting a reagent reacting with the radical hydrogen to form H.sub.2S, and means for supplying a precursor to the diffusion area. The injection means inject the reagent into a central area of the intake area in the longitudinal direction within the radical hydrogen flow. The pumping means are controlled so as to operate during the reagent injection, and generate a flow of H.sub.2S along the element to be treated in order to activate said element so as to absorb the precursor.

A chemical dispensing apparatus for providing a chlorine vapor to a reaction chamber is disclosed. The chemical dispensing apparatus may include: a chemical storage vessel configured for storing a chlorine-containing chemical species, a reservoir vessel in fluid communication with the chemical storage vessel, the reservoir vessel configured for converting the chlorine-containing chemical species to the chlorine vapor, and a reaction chamber in fluid communication with the reservoir vessel. Methods for dispensing a chlorine vapor to a reaction chamber are also disclosed.

An apparatus for manufacturing hexagonal Si crystal includes: a reaction tube; a mixed source part placed on one side in the reaction tube, for receiving mixed source of silicon, aluminum, and gallium which are in a solid state; a halogenation reaction gas supply pipe for supplying a halogenation reaction gas to the mixed source part; a substrate mounting part placed on the other side in the reaction tube, for mounting a first substrate, wherein the first substrate is disposed such that a crystal growth surface of the first substrate faces downwards; a nitrification reaction gas supply pipe for supplying a nitrification reaction gas to the substrate mounting part; and a heater for heating the reaction tube. The heater heats the reaction tube in a temperature range of 1100-1300° C.

Systems having one or more features that are advantageous for depositing fluorinated polymeric coatings on substrates, and methods of employing such systems to deposit such coatings, are generally provided.