A method of forming a silicon carbide-containing film on a substrate, includes: heating the substrate; supplying a carbon precursor gas containing an organic compound having an unsaturated carbon bond to the heated substrate; supplying a silicon precursor gas containing a silicon compound to the heated substrate; laminating, on the substrate, a silicon carbide-containing layer to be turned into the silicon carbide-containing film by allowing the organic compound having the unsaturated carbon bond to thermally react with the silicon compound; and supplying plasma to the silicon carbide-containing layer.

A coating system for parylene deposition may include a chamber, a pumping system having a first and a second pump, where a pumping speed of the first and second pumps is based at least in part on an operating pressure; and a controller, the controller configured by machine-readable instructions to control activation of the first pump to initiate a pump down operation of the chamber, determine a cut-in pressure for switching operation from the first to the second pump, monitor an internal pressure of the chamber, switch operation to the second pump based at least in part on determining that the internal pressure of the chamber is at or below the cut-in pressure; and continue, using the second pump, the pump down operation of the deposition chamber until the internal pressure is at or below a target pressure for parylene deposition.

A method may include providing a set of features in a mask layer, wherein a given feature comprises a first dimension along a first direction, second dimension along a second direction, orthogonal to the first direction, and directing an angled ion beam to a first side region of the set of features in a first exposure, wherein the first side region is etched a first amount along the first direction. The method may include directing an angled deposition beam to a second side region of the set of features in a second exposure, wherein a protective layer is formed on the second side region, the second side region being oriented perpendicularly with respect to the first side region. The method may include directing the angled ion beam to the first side region in a third exposure, wherein the first side region is etched a second amount along the first direction.

A doped or undoped silicon carbide film can be deposited using a remote plasma chemical vapor deposition (CVD) technique. One or more silicon-containing precursors are provided to a reaction chamber. Radical species, such as hydrogen radical species, are provided in a substantially low energy state or ground state and interact with the one or more silicon-containing precursors to deposit the silicon carbide film. A co-reactant may be flowed with the one or more silicon-containing precursors, where the co-reactant can be a depositing additive or a non-depositing additive to increase step coverage of the silicon carbide film.

A doped or undoped silicon carbide film can be deposited using a remote plasma chemical vapor deposition (CVD) technique. One or more silicon-containing precursors are provided to a reaction chamber. Radical species, such as hydrogen radical species, are provided in a substantially low energy state or ground state and interact with the one or more silicon-containing precursors to deposit the silicon carbide film. A co-reactant may be flowed with the one or more silicon-containing precursors, where the co-reactant can be a depositing additive or a non-depositing additive to increase step coverage of the silicon carbide film.

A substrate processing apparatus includes: a chamber; first and second nozzle units inside the chamber; a remote plasma generator outside the chamber and converting a cleaning gas into a plasma state; a common pipe outside the chamber and connected to the remote plasma generator through which the cleaning gas in the plasma state flows; a first connection pipe connecting the common pipe and the first nozzle unit; a second connection pipe connecting the common pipe and the second nozzle unit; a source gas supply pipe connected to the first connection pipe outside the chamber, supplying a source gas to the first connection pipe, and in which a first supply valve is installed, and a reaction gas supply pipe connected to the second connecting pipe outside the chamber, supplying a reaction gas to the second connection pipe, and in which a second supply valve is installed.

The present invention relates to an apparatus and method for forming a silicon nitride film by performing plasma enhanced atomic layer deposition (PE-ALD) employing very high frequency (VHF). An atomic layer deposition apparatus according to an embodiment of the present invention may comprise: a chamber providing a space in which a process is performed; a substrate support unit for supporting a substrate in the chamber; a gas supply unit for supplying gas to the chamber; an exhaust unit for discharging gas in the chamber; a plasma generation unit installed in the chamber to generate plasma in the chamber; and a VHF (very high frequency) power source for applying a VHF band signal to the plasma generation unit.

In one embodiment, a gas distribution assembly includes an injection block having at least one inlet to deliver a precursor gas to a plurality of plenums from at least two gas sources, a perforated plate bounding at least one side of each of the plurality of plenums, at least one radiant energy source positioned within each of the plurality of plenums to provide energy to the precursor gas from one or both of the at least two gas sources and flow an energized gas though openings in the perforated plate and into a chamber, and a variable power source coupled to each of the radiant energy sources positioned within each of the plurality of plenums.

In one embodiment, a gas distribution assembly includes an injection block having at least one inlet to deliver a precursor gas to a plurality of plenums from at least two gas sources, a perforated plate bounding at least one side of each of the plurality of plenums, at least one radiant energy source positioned within each of the plurality of plenums to provide energy to the precursor gas from one or both of the at least two gas sources and flow an energized gas though openings in the perforated plate and into a chamber, and a variable power source coupled to each of the radiant energy sources positioned within each of the plurality of plenums.

Disclosed are methods and systems for providing oxygen doped silicon carbide. A layer of oxygen doped silicon carbide can be provided under process conditions that employ one or more silicon-containing precursors that have one or more silicon-hydrogen bonds and/or silicon-silicon bonds. The silicon-containing precursors may also have one or more silicon-oxygen bonds and/or silicon-carbon bonds. One or more radical species in a substantially low energy state can react with the silicon-containing precursors to form the oxygen doped silicon carbide film. The one or more radical species can be formed in a remote plasma source.