A vaporizer system is provided that allows for rapid shifts in the flow rate of a vaporized reactant while maintaining a constant overall flow rate of vaporized reactant and carrier gas.

A method of depositing silicon carbide on a preform to form a ceramic matrix composite comprises placing the preform into a reaction vessel, removing air from the reaction vessel and backfilling the reaction vessel with an inert gas to an operating pressure. The reaction vessel and the preform are heated to an operating temperature. A carrier gas and precursor materials are heated to a preheat temperature outside of the reaction vessel. The carrier gas and the precursor materials are introduced to the reaction vessel in a specified ratio. Off gasses, the precursor materials that are unspent, and the carrier gas are removed from the reaction vessel to maintain the specified ratio of the precursor materials in the reaction vessel.

A gas feedthrough assembly and processing apparatus using the same are disclosed herein. In some embodiments, the gas feedthrough assembly, includes a dielectric body; at least one channel extending through the dielectric body; and a dielectric tube disposed within the at least one channel, wherein an inner diameter of the at least one channel is greater than an outer diameter of the dielectric tube such that a gap is formed between an outer wall of the dielectric tube and an inner wall of the at least one channel.

A semiconductor device manufacturing method includes: vertically arranging and storing a plurality of substrates in a processing container and forming a condition where at least an upper region or a lower region relative to a substrate disposing region where the plurality of substrates are arranged is blocked off by an adaptor; and while maintaining the condition, forming films on the plurality of substrates by performing a cycle including the following steps a predetermined number of times in a non-simultaneous manner: supplying source gas to the plurality of substrates in the processing container from the side of the substrate disposing region; discharging the source gas from the interior of the processing container via exhaust piping; supplying reaction gas to the plurality of substrates in the processing container from the side of the substrate disposing region; and discharging the reaction gas from the interior of the processing container via the exhaust piping.

STEP 1 (Pressure increasing step) increases pressure within a raw material container to first pressure by supplying carrier gas to the inside of the raw material container by PCV. STEP 2 (Pressure decreasing step) decreases the pressure within the raw material container to second pressure by operating an exhaust device and discarding the raw material gas from a raw material gas supply pipe via an exhaust bypass pipe. STEP 3 (Stabilization step) stabilizes the vaporization efficiency for vaporizing the raw material inside the raw material container by operating the exhaust device and discarding the raw material gas while introducing the carrier gas into the raw material container. STEP 4 (Film forming step) supplies the raw material gas to the inside of the processing container via the raw material gas supply pipe and deposits a thin film on a wafer by CVD.

The present invention discloses single-walled carbon nanotubes horizontal arrays with ultra-high density and the preparation method. The method comprises the following steps: loading a catalyst on a single crystal growth substrate; after annealing, introducing hydrogen into a chemical vapor deposition system to conduct a reduction reaction of the catalyst; and maintaining the introduction of the hydrogen to conduct the orientated growth of a single-walled carbon nanotube. The density of the ultra-high density single-walled carbon nanotube horizontal array obtained by this method exceeds 130 tubes/micrometer, and an electrical performance test is performed on the prepared ultra-high density single-walled carbon nanotube horizontal array shows a high on-current density of 380 μA/μm, and the transconductance of 102.5 μS/μm.

A fluoro-organosiloxane composition, coating and process for depositing the coating. Substituted tetramethylenedisiloxane precursor at a flow rate (Q.sub.sTMDSO) and perfluorinated propylene oxide precursor at a flow rate (Q.sub.PFPO) are introduced into a process chamber at a flow rate ratio (Q.sub.sTMDSO/Q.sub.PFPO) in the range of 0.1 to 2.0 (g/(hr.Math.sccm)). A pulsed DC voltage is applied to a substrate and a fluoro-organosiloxane coating is deposited on the substrate, wherein the coating exhibits a water contact angle in oil (WCA/O) of greater than 155°.

A substrate processing apparatus including a reaction chamber with an inlet opening, an in-feed line to provide a reactive chemical into the reaction chamber via the inlet opening, incoming gas flow control means in the in-feed line, the in-feed line extending from the flow control means to the reaction chamber, the in-feed line in this portion between the flow control means and the reaction chamber having the form of an inlet pipe with a gas-permeable wall, the inlet pipe with the gas-permeable wall extending towards the inlet opening through a volume at least partly surrounding the inlet pipe, and the apparatus (100, 800) being configured to provide fluid to surround and enter the inlet pipe in said portion.

Embodiments described herein generally relate to methods for controlling a processing system. Particularly, subfab components of the processing system may be controlled based on the flow of materials into the processing system. In some embodiments, the flow of an inert gas used to dilute the effluent gases may be controlled in accordance with the flow of one or more precursor gases. Thus, the cost of running the processing system is reduced while mitigating critical EHS concerns.

Methods and apparatuses are provided herein for independently adjusting flowpath conductance. One multi-station processing apparatus may include a processing chamber, a plurality of process stations in the processing chamber that each include a showerhead having a gas inlet, and a gas delivery system including a junction point and a plurality of flowpaths, in which each flowpath includes a flow element, includes a temperature control unit that is thermally connected with the flow element and that is controllable to change the temperature of that flow element, and fluidically connects one corresponding gas inlet of a process station to the junction point such that each process station of the plurality of process stations is fluidically connected to the junction point by a different flowpath.