Exemplary semiconductor processing chambers may include a gasbox including a first plate having a first surface and a second surface opposite to the first surface. The first plate of the gasbox may define a central aperture that extends from the first surface to the second surface. The first plate may define an annular recess in the second surface. The first plate may define a plurality of apertures extending from the first surface to the annular recess in the second surface. The gasbox may include a second plate characterized by an annular shape. The second plate may be coupled with the first plate at the annular recess to define a first plenum within the first plate.

Exemplary processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include a mixing manifold coupled between the remote plasma unit and the processing chamber. The mixing manifold may be characterized by a first end and a second end opposite the first end, and may be coupled with the processing chamber at the second end. The mixing manifold may define a central channel through the mixing manifold, and may define a port along an exterior of the mixing manifold. The port may be fluidly coupled with a first trench defined within the first end of the mixing manifold. The first trench may be characterized by an inner radius at a first inner sidewall and an outer radius, and the first trench may provide fluid access to the central channel through the first inner sidewall.

The invention discloses a gas dispensing apparatus for multiple chemical resources, including: a showerhead assembly having at least two layers of board bodies and a gas mixing chamber defined at a center of the at least two layers of board bodies, and the gas mixing chamber having multiple holes defined thereon; and a pipeline assembly mounted to the showerhead assembly and having a stepped body defining at least two pipelines, the stepped body being configured to connect to the at least two layers of the board bodies to define at least two gas cavities, each of the gas cavities communicating with the corresponding one of the pipelines, each of the gas cavities communicating with the holes defined on the gas mixing chamber.

A metal or ceramic layer may be deposited on nuclear materials by chemical vapor deposition using a non-halogenated liquid organometallic metal precursor. The chemical vapor deposition is carried out by a method including steps of introducing nuclear fuel particles into a fluidized bed reactor, and heating the fluidized bed reactor to a desired operating temperature T.sub.1. A flow of a carrier- gas is initiated through a vaporizer, and the non-halogenated liquid organometallic metal precursor is injected into the vaporizer and vaporized. A first mixture of the carrier gas and the vaporized non-halogenated liquid organometallic metal precursor may be mixed with a gaseous carbon source, a gaseous nitrogen source, a gaseous oxygen source, or a mixture thereof to produce a second mixture; and the second mixture flows into the fluidized bed reactor at operating temperature T.sub.1, allowing deposition of a desired ceramic coating on the particles. The non-halogenated liquid organometallic metal precursor may be a compound of Zr, Hf, Nb, Ta, W, V, Ti, or a mixture thereof.

A method of depositing silicon carbide on a preform to form a ceramic matrix composite comprises placing the preform into a reaction vessel, removing air from the reaction vessel and backfilling the reaction vessel with an inert gas to an operating pressure. The reaction vessel and the preform are heated to an operating temperature. A carrier gas and precursor materials are heated to a preheat temperature outside of the reaction vessel. The carrier gas and the precursor materials are introduced to the reaction vessel in a specified ratio. Off gasses, the precursor materials that are unspent, and the carrier gas are removed from the reaction vessel to maintain the specified ratio of the precursor materials in the reaction vessel.

A device for the plasma treatment of containers comprises a process gas producer for producing a process gas mixture and at least one coating station, which comprises at least one plasma chamber having a treatment place, in which plasma chamber at least one container having a container interior can be inserted and positioned on the treatment place, each plasma chamber being at least partially evacuable in order to suck the process gas provided by the process gas producer through the container, the interior thereof thus being provided with an inner coating by means of plasma treatment, and pressure-measuring apparatuses being provided at predefined points of the device in order to ensure the process stability. The pressure-measuring apparatuses at least at some of the predefined points of the device comprise gas-type-dependent pressure transducers.

A coated cutting tool includes a substrate and a hard film on coated on the substrate. The hard film contains a complex nitride of Al and Cr. The hard film includes aggregates of columnar grains grown on the substrate along the thickness of the film. The nitride has an Al content of 60 atom % or more, a Cr content of 10 atom % or more, and a total content of Al and Cr of 90 atom % or more relative to the total amount of metal and metalloid elements. The complex nitride has the highest peak intensity assigned to crystal plane (311) of an fcc structure in X-ray diffractometry. In the hard film, the ratio of an X-ray diffraction intensity of plane (311) to the intensities of the other planes is 1.30 or more. A method and a system are also provided for manufacturing the coated cutting tool by chemical vapor deposition.

In the present invention, a chemical-vapor-deposition silicon carbide (SIC) bulk having an improved etching characteristic includes silicon carbide (SIC) manufactured by a chemical vapor deposition method using MTS (methyltrichlorosilane), hydrogen (H.sub.2), and nitrogen (N.sub.2) gases. The SIC manufactured by the chemical vapor deposition method is β-SiC (3C-SiC), and 6H-SiC is present in the SIC manufactured by the chemical vapor deposition method. Five peaks having a reference code of 03-065-0360 and a peak having a reference code of 00-049-1428 are confirmed to be present from XRD analysis of the silicon carbide bulk, and a nitrogen concentration value is 4.0×10.sup.18 atoms/cm.sup.3 or more at a depth of 1,500 nm or more from the surface of the bulk, which is a metastable layer.

A method of forming a silicon germanium layer on a surface of a substrate and a system for forming a silicon germanium layer are disclosed. Examples of the disclosure provide a method that includes providing a plurality of growth precursors to control and/or promote parasitic gas-phase and surface reactions, such that greater control of the film (e.g., thickness and/or composition) uniformity can be realized.

A deposition apparatus for depositing a material on a substrate is provided. The deposition apparatus has a processing chamber defining a processing space in which the substrate is arranged, an ultraviolet radiation assembly configured to emit ultraviolet radiation and a microwave radiation assembly configured to emit microwave radiation into an excitation space that can be the same as the processing space, and a gas feed assembly configured to feed a precursor gas into the processing space and a reactive gas into the excitation space. The ultraviolet radiation assembly and the microwave radiation assembly are operated in combination to excite the reactive gas in the excitation space. The material is deposited on the substrate from the reaction of the excited reactive gas and the precursor gas. A method for using the deposition apparatus to deposit a material on a substrate is provided.