A semiconductor substrate processing apparatus includes a vacuum chamber having a processing zone in which a semiconductor substrate may be processed, a process gas source in fluid communication with the vacuum chamber for supplying a process gas into the vacuum chamber, a showerhead module through which process gas from the process gas source is supplied to the processing zone of the vacuum chamber, and a substrate pedestal module. The substrate pedestal module includes a pedestal made of ceramic material having an upper surface configured to support a semiconductor substrate thereon during processing, a stem made of ceramic material, and a backside gas tube made of metallized ceramic material that is located in an interior of the stem. The metallized ceramic tube can be used to deliver backside gas to the substrate and supply RF power to an embedded electrode in the pedestal.

The present invention includes a mist generator that generates a mist of a raw material of a film to be formed, and a mist jet nozzle that jets the mist generated by the mist generator to a substrate on which a film is to be formed. The mist jet nozzle includes: a main body having a hollow portion; a mist supply port that supplies the mist; a spout that jets the mist to the outside; a carrier gas supply port that supplies a carrier gas; and a shower plate having a plurality of holes formed therein. By the arrangement of the shower plate, the hollow portion is divided into a first space connected to the carrier gas supply port and a second space connected to the spout. The mist supply port is connected to the second space.

A film forming apparatus includes a mist spray head for spraying a raw material. The mist spray head includes a raw material spray nozzle and a raw material ejection part for ejecting an atomized raw material, and the raw material spray nozzle includes a cavity and a raw material discharge part which is drilled in a side surface of the cavity, being away from a bottom surface of the cavity, and is connected to the raw material ejection part.

A titanium aluminum nitride coating having a columnar crystal structure, which is formed on a substrate, comprises high-Al TiAlN having an fcc structure, which has a composition represented by (Tix.sub.1, Aly.sub.1)N, wherein x.sub.1 and y.sub.1 are numbers meeting x.sub.1=0.005-0.1, and y.sub.1=0.995-0.9 by atomic ratio, and network-like, high-Ti TiAlN having an fcc structure, which has a composition represented by (Tix.sub.2, Aly.sub.2)N, wherein x.sub.2 and y.sub.2 are numbers meeting x.sub.2=0.5-0.9, and y.sub.2=0.5-0.1 by atomic ratio; the high-Al TiAlN being surrounded by the network-like, high-Ti TiAlN.

The present invention relates to an apparatus (100) for a thermal evaporation system (200) and to a thermal evaporation system (200), respectively, for coating a coating region (58) on a front surface (56) of a substrate (50) with a source material (40) thermally evaporated and/or sublimated from a source (30) by electromagnetic radiation (80). Further, the present invention relates to a method coating a coating region (58) on a front surface (56) of a substrate (50) with a source material (40) from a source (30) thermally evaporated and/or sublimated by electromagnetic radiation (80).

Apparatus for processing a substrate in a process chamber are provided here. In some embodiments, a gas injector for use in a process chamber includes a first set of outlet ports that provide an angled injection of a first process gas at an angle to a planar surface, and a second set of outlet ports proximate the first set of outlet ports that provide a pressurized laminar flow of a second process gas substantially along the planar surface, the planar surface extending normal to the second set of outlet ports.

In a metal oxide film formation method of the present invention, the following steps are performed. In a solution vessel, a raw-material solution including aluminum as a metallic element is turned into a mist so that a raw-material solution mist is obtained. In a solution vessel provided independently of the solution vessel, a reaction aiding solution including a reaction aiding agent for formation of aluminum oxide is turned into a mist so that an aiding-agent mist is obtained. Then, the raw-material solution mist and the aiding-agent mist are fed to a nozzle provided in a reactor vessel via paths. Thereafter, the raw-material solution mist and the aiding-agent mist are mixed in the nozzle so that a mixed mist is obtained. Then, the mixed mist is fed onto a back surface of a heated P-type silicon substrate.

A gas distribution system is disclosed in order to obtain better film uniformity on a substrate in a cross-flow reactor. The better film uniformity may be achieved by an asymmetric bias on individual injection ports of the gas distribution system. The gas distribution may allow for varied tunability of the film properties.

The method of forming a thin film feeds a raw material gas causing a reversible decomposition reaction toward an upper surface of substrate placed on a placing table in a processing container; decomposes the raw material gas with a predetermined decomposing scheme thereby forming a thin film of the raw material gas on the surface of the substrate; and feeds a decomposition restraint gas having a characteristic of restraining a thermal decomposition of the raw material gas separately from the raw material gas toward a peripheral portion of the substrate when the raw material gas is fed to the substrate, thereby restraining the thermal decomposition of the raw material gas and selectively preventing the thin film from being formed in the peripheral portion of the substrate.

A device for fluidised bed chemical vapour deposition, includes a reactor including a treatment zone in which the fluidised bed chemical vapour deposition is intended to be carried out using at least a first and a second reactive gas and a diffuser under the treatment zone delimiting the reactor, and a heating system configured to heat at least the treatment zone. The device includes a first channel for introducing the first reactive gas and a second channel for introducing the second reactive gas, which second channel is separate from the first channel and opens out under the diffuser, and wherein the first introduction channel is capable of being moved with respect to the heating system.