Transition metal dichalcogenide films and methods for depositing transition metal dichalcogenide films on a substrate are described. Methods for converting transition metal oxide films to transition metal dichalcogenide films are also described. The substrate is exposed to a precursor and a chalcogenide reactant to form the transition metal dichalcogenide film. The exposures can be sequential or simultaneous.

A coated tool of the present disclosure is provided with a base member and a coating layer located on a surface of the base member. The coating layer includes a TiCNO layer and an Al.sub.2O.sub.3 layer. The Al.sub.2O.sub.3 layer is located in contact with the TiCNO layer at a position farther from the base member than the TiCNO layer is. The TiCNO layer includes a first composite protrusion including a first protrusion that projects toward the Al.sub.2O.sub.3 layer and a second protrusion that projects from the first protrusion in a direction intersecting a direction in which the first protrusion projects. A cutting tool of the present disclosure is provided with: a holder extending from a first end toward a second end and including a pocket on a side of the first end; and the above-described coated tool located in the pocket.

A coating is deposited on a substrate in a CVD reactor that includes a process chamber and a gas inlet member with a first gas distribution chamber and a second gas distribution chamber separate from the first gas distribution chamber. To deposit heterostructures, in a first step, an inert or a diluent gas is fed into the first gas distribution chamber and a reactive gas containing the elements of a first coating is fed into the second gas distribution chamber. The reactive gas pyrolytically decomposes in the process chamber to form the first coating on the substrate. In a second step, a diluent gas is fed into the second gas distribution chamber and a reactive gas containing the elements of a second coating is fed into the first gas distribution chamber. The reactive gas or gas mixture decomposes in the process chamber to form the second coating on the substrate.

Apparatus for mixing two or more gases prior to entering a reaction chamber, reactor systems including the apparatus, and methods of using the apparatus and systems are disclosed. The systems and methods as described herein can be used to, for example, pulse a mixture of two or more precursors to a reaction chamber.

A process for manufacturing a friction component made of composite material, includes the densification of a fibrous preform of carbon yarns by a matrix including at least pyrocarbon and at least one ZrO.sub.xC.sub.y phase, where 1≤x≤2 and 0≤y≤1, the matrix being formed by chemical vapor infiltration at least from a first gaseous precursor of pyrocarbon and a second gaseous precursor including zirconium, the second precursor being an alcohol or a C.sub.1 to C.sub.6 polyalcohol modified by linking the oxygen atom of at least one alcohol function to a group of formula —Zr—R.sub.3, the substituents R being identical or different, and R being selected from: —H, C.sub.1 to C.sub.5 carbon chains and halogen atoms.

Methods for depositing rhenium-containing thin films on a substrate are described. The substrate is exposed to a rhenium precursor and a reducing agent to form the rhenium-containing film (e.g., metallic rhenium, rhenium nitride, rhenium oxide, rhenium carbide). The exposures can be sequential or simultaneous. The rhenium-precursors are substantially free of halogen.

Described herein is a technique capable of improving a uniformity of the characteristics of a film formed on a surface of a substrate by a rotary type apparatus. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber in which a substrate is processed; a substrate support provided in the process chamber and including a plurality of placement parts on which the substrate is placed; a main nozzle provided so as to face a placement part among the plurality of the placement parts and including a first portion where no hole is provided so as to thermally decompose a process gas; and an auxiliary nozzle provided so as to face the placement part and including a second portion where no hole is provided so as to thermally decompose the process gas.

A cutting tool includes a substrate and a coated film arranged on the substrate. The coated film includes a first layer. The first layer includes a plurality of crystal grains. The crystal grains are composed of Al.sub.xTi.sub.1−xC.sub.yN.sub.1−y, wherein x is more than 0.65 and less than 0.95, and y is not less than 0 and less than 0.1. In a first region, the crystal grains have an average aspect ratio of not more than 3.0. In a second region, the crystal grains have an average aspect ratio of more than 3.0 and not more than 10.0. The crystal grains include crystal grains having a cubic crystal structure. The first layer has a ratio of an area occupied by the crystal grains having a cubic crystal structure of not less than 90%. The first layer has a thickness of not less than 2 m and not more than 20 m.

The present inventive concept relates to a substrate processing apparatus and a spray module of the substrate processing apparatus, the substrate processing apparatus comprising: a chamber for providing a processing space; a lid for covering the upper portion of the chamber; a substrate support portion which supports at least one substrate and rotates about a rotary shaft; a gas spray portion which is above the substrate support portion in a diameter direction from the rotary shaft of the substrate support portion and which sprays a processing gas; and a measuring portion which is arranged to be in parallel with or to be inclined in a direction at a certain angle with respect to the diameter direction on a measurement position that is spaced apart from the diameter direction and which measures the temperature of the substrate supported by the substrate support portion or the temperature of the substrate support portion.

A cleaning method that removes contaminants adhering to a stage in a chamber, includes: setting a pressure in a chamber to a predetermined vacuum pressure; supplying a first gas that forms a shock wave toward the stage; and supplying a second gas that does not form the shock wave toward the stage.