A film having filling capability of a patterned recess on a surface of a substrate is deposited by forming a viscous material in a gas phase by striking a plasma in a chamber filled with a volatile precursor that can be polymerized within certain parameter ranges which include a partial pressure of the precursor during a plasma strike and substrate temperature.

This invention relates to a substrate processing technique for performing a pressure increasing step, a pressure keeping step and a pressure reducing step in this order in a processing container. A flow rate of a processing fluid in a processing space is suppressed to a second flow rate lower than a first flow rate while maintaining the processing space at a first pressure between the pressure increasing step and the pressure keeping step or in an initial stage of the pressure keeping step. In this way, the mutual diffusion between the processing fluid and a liquid in the processing space is promoted. After this diffusion proceeds, the substrate is dried by the discharge of the processing fluid from the processing space.

A substrate processing system for treating a substrate includes a manifold, a plurality of injector assemblies located in a processing chamber, and a dose controller. Each of the plurality of injector assemblies is in fluid communication with the manifold and includes a valve including an inlet and an outlet. The dose controller is configured to communicate with the valve in each of the plurality of injector assemblies. The dose controller is configured to adjust a pulse width supplied to the valve in each of the plurality of injector assemblies to provide spatial dosing and at least one of compensate for upstream skew caused by a prior process and pre-compensate for downstream skew expected from a subsequent process.

There is provided a processing apparatus for forming a film with a plasma. The processing apparatus comprises: a processing container, having a ceramic sprayed coating on an inner wall on which an antenna that radiates microwaves is arranged, configured to accommodate a substrate; a mounting table configured to mount the substrate in the processing container; and a controller configured to perform a precoating process of coating a surface of the ceramic sprayed coating with a first carbon film with a plasma of a first carbon-containing gas at a first pressure and a film forming process of forming a second carbon film on the substrate with a plasma of a second carbon-containing gas at a second pressure.

A method of forming a silicon carbide-containing film on a substrate in a processing container. The method includes: accommodating the substrate in the processing container; adsorbing an organic compound on the substrate by supplying a carbon precursor gas to the processing container; and reacting the organic compound adsorbed on the substrate with a silicon compound by supplying a silicon precursor gas including the silicon compound to the processing container. The adsorbing the organic compound on the substrate and the reacting the organic compound are alternately repeated multiple times. In the adsorbing the organic compound, the vacuum exhaust is restricted, and then the restriction of the vacuum exhaust is released. The supply of the silicon precursor gas is stopped during the reacting the organic compound with the silicon compound, and the vacuum exhaust is not restricted after the supply of the silicon precursor gas is stopped.

A substrate processing apparatus for processing a substrate includes: a processing container in which the substrate is accommodated; a stage provided in an interior of the processing container and configured to place the substrate thereon; a partition wall provided in the interior of the processing container and surrounding an outer circumference of the stage; an inner gas supplier configured to supply a first gas to an inner side of the partition wall; and an outer gas supplier configured to supply a second gas to an outer side of the partition wall in the interior of the processing container.

A vapor phase growth method of embodiments includes: forming a first silicon carbide layer having a first doping concentration on a silicon carbide substrate at a first growth rate by supplying a first process gas under a first gas condition; forming a second silicon carbide layer having a second doping concentration at a second growth rate higher than the first growth rate by supplying a second process gas under a second gas condition; and forming a third silicon carbide layer having a third doping concentration lower than the first doping concentration and the second doping concentration at a third growth rate higher than the second growth rate by supplying a third process gas under a third gas condition.

The present application discloses a method for fabricating the semiconductor device including providing a substrate in a reaction chamber, forming an untreated silicon nitride film on the substrate, and forming a treated silicon nitride film on the untreated silicon nitride film. Forming the untreated silicon nitride film includes the steps of: (a) supplying a first silicon precursor into the reaction chamber, thereby allowing chemical species from the first silicon precursor to be adsorbed on the substrate, and (b) supplying a first nitrogen precursor into the reaction chamber, thereby nitriding the chemical species to deposit resultant silicon nitride. The step (a) and the step (b) are sequentially and repeatedly performed to form the untreated silicon nitride film. Forming the treated silicon nitride film includes the steps of: (c) supplying a second silicon precursor into the reaction chamber, thereby allowing chemical species from the second silicon precursor to be adsorbed on the untreated silicon nitride film, (d) performing a first hydrogen radical purging by supplying hydrogen radicals into the reaction chamber to reduce impurities in the chemical species from the second silicon precursor, and (e) supplying a second nitrogen precursor into the reaction chamber, thereby nitriding the chemical species from the second silicon precursor to deposit resultant silicon nitride. The step (c), the step (d), and the step (e) are sequentially and repeatedly performed to form the treated silicon nitride film. The untreated silicon nitride film and the treated silicon nitride film together form a silicon nitride layer.

Coated articles and methods and systems for coating the articles are described herein. The methods and systems described herein include, but are not limited to, steps for actively or passively controlling the temperature during the coating process, steps for providing intimate contact between the substrate and the support holding the substrate in order to maximize energy transfer, and/or steps for preparing gradient coatings. Methods for depositing high molecular weight polymeric coatings, end-capped polymer coatings, coatings covalently bonded to the substrate or one another, metallic coatings, and/or multilayer coatings are also disclosed. Deposition of coatings can be accelerated and/or improved by applying an electrical potential and/or through the use of inert gases.

A method and a system for preparing a substrate with three dimensional features for immersion based inspection. The method may include (a) receiving, by a secondary chamber, an article that includes the substrate, a housing, and a transparent element; wherein the transparent element is sealingly coupled to the housing to provide a sealed inner space; wherein the sealed inner space may include a gap between a first surface of the substrate to a second surface of the transparent element; wherein the gap is filled with gas during the receiving of the article; (b) evacuating the gas from the gap while reducing a pressure within the secondary chamber and maintaining an integrity of the transparent element; (c) filling the gap with fluid while increasing the pressure within a secondary chamber inner space and maintaining an integrity of the transparent element; and (d) outputting the article from the secondary chamber.