Disclosed are a transition metal chalcogenide thin-layer material, a preparation method and an application thereof. The preparation method comprises: uniformly spreading a transition metal source between two substrates to prepare a sandwich structure; performing a heat treatment on the sandwich structure to fuse and bond the two substrates together, and performing a chemical vapor deposition reaction on a chalcogen element source and the fused and bonded sandwich structure under the protection of a protective gas, wherein the transition metal source is heated to dissolve and diffuse at a reaction temperature, separated out from surfaces of the substrates, and reacts with the chalcogen element source. The prepared thin-layer material is uniformly distributed in a centimeter-level substrate.

Described are directional gas diffuser devices and housing components thereof; systems that include the gas diffuser devices; methods of using the gas diffuser devices; and methods of manufacturing gas diffuser devices.

Exemplary semiconductor processing chambers may include a substrate support including a top surface. A peripheral edge region of the top surface may be recessed relative to a medial region of the top surface. The chambers may include a pumping liner disposed about an exterior surface of the substrate support. The chambers may include a liner disposed between the substrate support and the pumping liner. The liner may be spaced apart from the exterior surface to define a purge lumen between the liner and the substrate support. The chambers may include an edge ring seated on the peripheral edge region. The edge ring may extend beyond a peripheral edge of the substrate support and above a portion of the liner. A gap may be formed between a bottom surface of the edge ring and a top surface of the liner. The gap and the purge lumen may be fluidly coupled.

An atomic layer deposition apparatus (1) is equipped with a processing substrate (2) provided in a vacuum container (3), and a shower head (4). The processing substrate (2) is provided in the vacuum container (3), and the shower head (4) is provided to be opposed to a processing surface of the processing substrate (2). A high-concentration ozone gas, an unsaturated hydrocarbon gas, and an ALD source gas are supplied from the shower head (4) to the processing substrate (2). The apparatus (1) repeats four steps of an oxidizing agent supplying step of supplying the high-concentration ozone gas and the unsaturated hydrocarbon gas into the vacuum container (3), an oxidizing agent purging step of discharging the gas supplied in the oxidizing agent supplying step, a source gas supplying step of supplying a source gas to the vacuum container (3), and a source gas purging step of discharging the source gas supplied to the vacuum container (3), to form an oxide film on the surface of the processing substrate (2). In the oxidizing agent purging step and/or the source gas purging step, the unsaturated hydrocarbon or ozone is used as the purging gas.

Embodiments disclosed herein generally relate to a gas distribution assembly for providing improved uniform distribution of processing gases into a semiconductor processing chamber. The gas distribution assembly includes a gas distribution plate, a blocker plate, and a dual zone showerhead. The gas distribution assembly provides for independent center to edge flow zonality, independent two precursor delivery, two precursor mixing via a mixing manifold, and recursive mass flow distribution in the gas distribution plate.

A semiconductor device manufacturing method, including: mounting substrates on a mounting table within a processing chamber along a rotation direction of the table; starting to supply a first-element-containing gas to a first region in the chamber along the rotation direction, while rotating the table and exhausting the processing chamber; starting to supply a second-element-containing gas to a second region in the chamber; starting to generate, by a plasma generating unit in the second region, plasma of the second-element-containing gas in the second region to have a first activity; and forming a thin film containing first and second elements on the substrates by rotating the table to cause the substrates to sequentially pass through the first and second regions in turn so that a first-element-containing layer is formed in the first region and is modified in the second region by generating plasma having a second activity higher than the first activity.

The present invention provides a gas jetting apparatus for a film formation apparatus. The gas jetting apparatus is capable of uniformly jetting, even onto a treatment-target object having a high-aspect-ratio groove, a gas into the groove. The gas jetting apparatus (100) according to the present invention includes a gas jetting cell unit (23) for rectifying a gas and jetting the rectified gas into the film formation apparatus (200). The gas jetting cell unit (23) has a fan shape internally formed with a gap (d0) serving as a gas route. A gas in a gas dispersion supply unit (99) enters from a wider-width side of the fan shape into the gap (d0), and, due to the fan shape, the gas is rectified, accelerated, and output from a narrower-width side of the fan shape into the film formation apparatus (200).

A method of conditioning internal surfaces of a plasma source includes flowing first source gases into a plasma generation cavity of the plasma source that is enclosed at least in part by the internal surfaces. Upon transmitting power into the plasma generation cavity, the first source gases ignite to form a first plasma, producing first plasma products, portions of which adhere to the internal surfaces. The method further includes flowing the first plasma products out of the plasma generation cavity toward a process chamber where a workpiece is processed by the first plasma products, flowing second source gases into the plasma generation cavity. Upon transmitting power into the plasma generation cavity, the second source gases ignite to form a second plasma, producing second plasma products that at least partially remove the portions of the first plasma products from the internal surfaces.

Exemplary semiconductor processing chambers may include a substrate support including a top surface. A peripheral edge region of the top surface may be recessed relative to a medial region of the top surface. The chambers may include a pumping liner disposed about an exterior surface of the substrate support. The chambers may include a liner disposed between the substrate support and the pumping liner. The liner may be spaced apart from the exterior surface to define a purge lumen between the liner and the substrate support. The chambers may include an edge ring seated on the peripheral edge region. The edge ring may extend beyond a peripheral edge of the substrate support and above a portion of the liner. A gap may be formed between a bottom surface of the edge ring and a top surface of the liner. The gap and the purge lumen may be fluidly coupled.

The deposition apparatus includes a chamber including a deposition space, a stage that supports a substrate, a light source, a gas supply, and a heater. The light source includes an emission source that emits an energy ray and is disposed to face the deposition space. The gas supply includes a shower plate and a gas diffusion space. The shower plate includes a first surface that faces the light source, a second surface that faces the stage, and a plurality of through-holes that penetrates the first surface and the second surface, the shower plate allowing the energy ray to transmit therethrough. The gas diffusion space faces the first surface and diffuses raw material gas including an energy ray-curable resin that cures when the energy ray-curable resin is irradiated with the energy ray. The gas supply supplies the raw material gas into the deposition space from the gas diffusion space. The heater heats the first surface of the shower plate.