Provided are an apparatus and method for forming a thin film. The apparatus for forming a thin film include a chamber configured to define a substrate processing space therein, a substrate support part connected to the chamber to support a substrate inside the chamber, a heat source part connected to the chamber to face the substrate support part, and a plasma generation part connected to the chamber to supply radicals between the substrate support part and the heat source part at at least two points.

A substrate processing apparatus unit is disclosed. Exemplary substrate processing apparatus includes a reaction chamber; a susceptor disposed in the reaction chamber and configured to support a substrate; a shower plate provided above the susceptor; a gas transport tube positioned above the shower plate and in fluid communication with the reaction chamber; and a gas supply tube connected to the gas transport tube through a gas diffusion nozzle, wherein the gas diffusion nozzle comprises a plurality of holes, and wherein at least one of the holes is angled.

Introduced here is a plasma polymerization apparatus and process. Example embodiments include a vacuum chamber in a substantially symmetrical shape relative to a central axis. A primary rotation shaft may be operable to rotate about the central axis of the vacuum chamber and a secondary rotation shaft may be operable to rotate about a secondary axis distal to the central axis. The primary and secondary rotation shafts may be mechanically connected, and one or more devices may be secured on a platform that rotates along both shafts. Additionally, reactive species discharge mechanisms positioned around a perimeter of the vacuum chamber may be configured to disperse reactive species into the vacuum chamber. The reactive species may form a uniform polymeric multi-layer coating on the surface of the one or more devices.

A device for depositing at least one radical chalcogenide thin film on an element to be treated including an intake area and a diffusion area receiving the element to be treated, the intake area and the diffusion area extending along a longitudinal axis, a radical hydrogen source connected to the intake area, pumping means, means for injecting a reagent reacting with the radical hydrogen to form H.sub.2S, and means for supplying a precursor to the diffusion area. The injection means inject the reagent into a central area of the intake area in the longitudinal direction within the radical hydrogen flow. The pumping means are controlled so as to operate during the reagent injection, and generate a flow of H.sub.2S along the element to be treated in order to activate said element so as to absorb the precursor.

A method for manufacturing a display substrate, a display substrate, a display panel and a display device are provided. The method includes: disposing a mask plate including an occlusion area above a base substrate, an orthographic projection of occlusion area on the base substrate partially overlapping a folding area of the base substrate; forming an inorganic layer pattern with an opening on the base substrate by using mask plate, an orthographic projection of opening on the base substrate partially overlapping the folding area of base substrate. An orthographic projection of opening on the base substrate partially overlaps the folding area of base substrate. The folding area of base substrate is occluded by mask plate. The inorganic layer is formed on the base substrate by using mask plate. Effect of conveniently and quickly removing a portion the inorganic layer located in the folding area can be achieved without removing the portion.

A sealing device is installed in heating treatment equipment through which a steel strip passes, the device including a rotary damper which is placed above the steel strip so as to be in contact with the steel strip, and a roll which is placed below the steel strip so that the roll opposes the rotary damper to form a pair consisting of the rotary damper and the roll opposing each other, the steel strip passing through a gap, which is formed between the rotary damper and the roll opposing each other, in which two pairs each of which is the pair consisting of the rotary damper and the roll opposing each other are arranged in tandem in a moving direction of the steel strip in the heating treatment equipment, and an inert gas is fed into a space defined by the two pairs arranged in tandem.

An atomic layer deposition apparatus (1) is equipped with a processing substrate (2) provided in a vacuum container (3), and a shower head (4). The processing substrate (2) is provided in the vacuum container (3), and the shower head (4) is provided to be opposed to a processing surface of the processing substrate (2). A high-concentration ozone gas, an unsaturated hydrocarbon gas, and an ALD source gas are supplied from the shower head (4) to the processing substrate (2). The apparatus (1) repeats four steps of an oxidizing agent supplying step of supplying the high-concentration ozone gas and the unsaturated hydrocarbon gas into the vacuum container (3), an oxidizing agent purging step of discharging the gas supplied in the oxidizing agent supplying step, a source gas supplying step of supplying a source gas to the vacuum container (3), and a source gas purging step of discharging the source gas supplied to the vacuum container (3), to form an oxide film on the surface of the processing substrate (2). In the oxidizing agent purging step and/or the source gas purging step, the unsaturated hydrocarbon or ozone is used as the purging gas.

To create constant partial pressures of the by-products and residence time of the gas molecules across the wafer, a dual showerhead reactor can be used. A dual showerhead structure can achieve spatially uniform partial pressures, residence times and temperatures for the etchant and for the by-products, thus leading to uniform etch rates across the wafer. The system can include differential pumping to the reactor.

Introduced here is a plasma polymerization apparatus and process. Example embodiments include a vacuum chamber in a substantially symmetrical shape relative to a central axis. A primary rotation shaft may be operable to rotate about the central axis of the vacuum chamber and a secondary rotation shaft may be operable to rotate about a secondary axis distal to the central axis. The primary and secondary rotation shafts may be mechanically connected, and one or more devices may be secured on a platform that rotates along both shafts. Additionally, reactive species discharge mechanisms positioned around a perimeter of the vacuum chamber may be configured to disperse reactive species into the vacuum chamber. The reactive species may form a uniform polymeric multi-layer coating on the surface of the one or more devices.

An atomic layer deposition apparatus (1) is equipped with a processing substrate (2) provided in a vacuum container (3), and a shower head (4). The processing substrate (2) is provided in the vacuum container (3), and the shower head (4) is provided to be opposed to a processing surface of the processing substrate (2). A high-concentration ozone gas, an unsaturated hydrocarbon gas, and an ALD source gas are supplied from the shower head (4) to the processing substrate (2). The apparatus (1) repeats four steps of an oxidizing agent supplying step of supplying the high-concentration ozone gas and the unsaturated hydrocarbon gas into the vacuum container (3), an oxidizing agent purging step of discharging the gas supplied in the oxidizing agent supplying step, a source gas supplying step of supplying a source gas to the vacuum container (3), and a source gas purging step of discharging the source gas supplied to the vacuum container (3), to form an oxide film on the surface of the processing substrate (2). In the oxidizing agent purging step and/or the source gas purging step, the unsaturated hydrocarbon or ozone is used as the purging gas.