An atomic layer deposition apparatus having a vacuum chamber, a deposition chamber within the vacuum chamber, an inlet channel extending from outside of the vacuum chamber to the deposition chamber such that the inlet channel is connected to the deposition chamber for supplying gases to the deposition chamber, a discharge channel extending from the deposition chamber to outside of the vacuum chamber for discharging gases from the deposition chamber, one or more first precursor supply sources connected to the inlet channel, and one or more second precursor supply sources connected to the inlet channel. The vacuum chamber is arranged between the one or more first precursor supply sources and the one or more second precursor supply sources.

A sealing structure of a gas supply line assembly connected to a processing chamber for processing a substrate in a vacuum atmosphere is provided. The sealing structure includes a first pipe member constituting the gas supply line assembly and having an end surface where an opening communicating with the processing chamber is formed, a second pipe member constituting the gas supply line assembly and having a facing surface facing the end surface of the first pipe member, and a sealing member made of an elastomer disposed between the end surface of the first pipe member and the facing surface of the second pipe member to surround the opening. The sealing structure further includes a sheet-shaped porous member disposed between the end surface of the first pipe member and the facing surface of the second pipe member to surround a vicinity of the sealing member.

The disclosure provides an apparatus for depositing poly(p-xylylene) onto a component. The apparatus comprises a deposition chamber configured to receive a component to be coated therein; an electrical power supply; a platen, disposed inside the deposition chamber and comprising an electrically conductive material, wherein the platen is electrically connected to the electrical power supply and configured to support the component; a monomer reservoir, configured to receive a monomer of poly(p-xylylene) therein; a monomer conduit extending between the monomer reservoir and the deposition chamber; and a heating means configured to heat the monomer reservoir and the monomer conduit to a temperature of between 25 and 250° C.

A substrate processing apparatus includes an inner chamber formed by an upper portion and a lower portion, a substrate support to support a substrate within the upper portion of the inner chamber, a plasma system to provide the inner chamber with plasma species from the top side of the inner chamber, and an outer chamber surrounding the upper portion of the inner chamber. The lower portion of the inner chamber extends to the outside of the outer chamber and remains uncovered by the outer chamber.

A fluid supply system includes: a support body having: a base plate; a side plate provided on one side of the base plate in the longitudinal direction so as to be orthogonal to the base plate; and a top plate provided on one end of the base plate in the height direction so as to be orthogonal to the base plate and the side plate; a process-gas supply unit provided on an outer surface of the top plate; a liquid supply unit provided on an inner surface of the side plate so as to communicate with the process-gas supply unit via a communication-flow-channel forming block; and a purge-gas supply unit provided on an inner surface of base plate so as to communicate with the process-gas supply unit via a communication pipe.

Embodiments include a gas distribution assembly for a semiconductor processing chamber. In an embodiment, the gas distribution assembly comprises a flow ratio controller (FRC). In an embodiment, a first line from the FRC goes to an ampoule, and a second line from the FRC goes to a main line. In an embodiment, a third line from the ampoule goes to the main line. In an embodiment, a mass flow meter is coupled to the main line.

There is provided a technique including: at least one pipe heater configured to heat at least one gas pipe configured to supply a gas to a process chamber in which a substrate is processed; at least one temperature detector configured to detect a temperature of the at least one gas pipe; at least one temperature controller configured to be capable of, based on the temperature detected by the at least one temperature detector, outputting a manipulated variable indicating electric power to be supplied to the at least one pipe heater, and controlling the temperature of the at least one gas pipe to approach at least one desired setpoint; and a host controller configured to be capable of controlling start and stop of heating of the at least one gas pipe performed under the control of the at least one temperature controller.

An apparatus for atomic scale processing is provided. The apparatus may include a reactor (100) and an inductively coupled plasma source (10). The reactor may have inner (154) and outer surfaces (152) such that a portion of the inner surfaces define an internal volume (156) of the reactor. The internal volume of the reactor may contain a fixture assembly (158) to support a substrate (118) wherein the partial pressure of each background impurity within the internal volume may be below 10.sup.−6 Torr to reduce the role of said impurities in surface reactions during atomic scale processing.

Herein disclosed are systems and methods related to semiconductor processing device including a manifold including a bore configured to deliver a gas to a reaction chamber, the manifold including a first block mounted to a second block, the first and second mounted blocks cooperating to at least partially define the bore. The manifold may further comprise an insulator cap disposed about the first block or the second block. The semiconductor processing device may comprise at least three valve blocks mounted to the second block so that a precursor backflow is prevented. Heater rod(s) can extend through the second block to a location adjacent the first block.

Methods and apparatus for processing a substrate are provided herein. For example, a gas supply configured for use with a processing chamber includes an ampoule that stores a precursor and comprises an input to receive a carrier gas and an output to provide a mixture of the carrier gas and the precursor to the processing chamber and a sensor assembly comprising a detector and an infrared source operably connected to an outside of an enclosure, through which the mixture flows, and a gas measurement volume disposed within the enclosure and along an inner wall thereof so that a concentration of the precursor in the mixture can be measured by the detector and transmitted to a controller.