A vaporization system includes: a vaporization device that is configured to vaporize a liquid material and that includes an inlet port through which the liquid material is introduced and an outlet port through which vaporized gas generated by vaporizing the liquid material is discharged; at least one first fixing screw with which at least one of the inlet port or the outlet port is screwed and fixed onto a base; at least one pipe member that is configured to communicate with the fixed port and through which the vaporized gas or the liquid material flows; and at least one second fixing screw with which the at least one pipe member is screwed and fixed onto the fixed port with a seal member interposed between the at least one pipe member and the fixed port.

Provided are powder atomic layer deposition (ALD) equipment capable of increasing deposition uniformity of powder by using a gas supply sequence with or without an impeller or a vibration generator, and a gas supply method thereof, the powder ALD equipment including a process chamber having an accommodation space therein to accommodate powder, a gas supplier for sequentially supplying a plurality of gases to the powder, and a gas exhauster for exhausting, to outside, the gases discharged from the process chamber, wherein the gas supplier includes a gas supply plate, a first gas supply line, a first valve, edge valves, and a gas supply sequence controller.

A substrate processing apparatus includes: a chamber; first and second nozzle units inside the chamber; a remote plasma generator outside the chamber and converting a cleaning gas into a plasma state; a common pipe outside the chamber and connected to the remote plasma generator through which the cleaning gas in the plasma state flows; a first connection pipe connecting the common pipe and the first nozzle unit; a second connection pipe connecting the common pipe and the second nozzle unit; a source gas supply pipe connected to the first connection pipe outside the chamber, supplying a source gas to the first connection pipe, and in which a first supply valve is installed, and a reaction gas supply pipe connected to the second connecting pipe outside the chamber, supplying a reaction gas to the second connection pipe, and in which a second supply valve is installed.

Apparatus and method for semiconductor substrate processing are presented. For devices such as valves used for semiconductor substrate processing especially a process like ALD, there is a need to monitor and control the exact time taken from the signal to open and close the valves so that delay times may be controlled. In an embodiment, an apparatus comprising a reactor, a valve, a process controller and a valve monitor system is presented. The process controller may be operationally connected to the valve and may be provided with a memory. The sensors may be either electrical or optical sensors.

A gas supply unit is disclosed. Exemplary gas supply unit includes an upper plate provided with a plurality of injection holes, the plurality of injection holes comprising a center injection hole and a plurality of outer injection holes; a divider plate constructed and arranged against the upper plate to guide a flow of gas from the injection holes; a first gas line fluidly coupled to the center injection hole; and a plurality of second gas lines fluidly coupled to the plurality of outer injection holes. The plurality of outer injection holes is arranged concentrically around the center injection hole. The divider plate is provided with a center through hole fluidly communicating with the center injection hole and is provided with a plurality of protrusions extending towards the upper plate thereby creating a plurality of zones, each of the zones fluidly communicating with one of the outer injection holes.

A flow substrate mounting structure comprising a fastener aperture and an alignment feature, wherein the alignment feature comprises at least one of an alignment pin removably coupled with the flow substrate mounting structure, an alignment slot, and an alignment step. A structure for coupling a plurality of flow substrates comprising a flow substrate mounting structure comprising a first fastener aperture, and a second fastener aperture, wherein the first fastener aperture is configured to couple with a first fastener and the second fastener aperture is configured to couple with a second fastener, wherein an alignment fixture is used to align the flow substrate mounting structure with the plurality of flow substrates.

According to embodiments, systems and methods are described herein that facilitate use of a Chemical Vapor Deposition (CVD) system continuously. The systems and methods shown herein include multiple precursor gas sources, and structures for independently connecting or disconnecting those sources for replacement. Furthermore, by providing user inputs for diluting the outputs of these multiple precursor gas sources, mixtures of precursor gas in carrier gas can be generated that have sufficiently low concentrations to be routed to a remove CVD system even at relatively low temperatures. Therefore, in embodiments many precursor gas sources, located remotely from the CVD chamber, can be independently operated and replaced as needed without interrupting a supply of precursor gas to the CVD chamber.

One object of the present invention is to provide a method for producing a metal nitride film that has a high film formation rate and excellent productivity. The present invention provides a method for producing a metal nitride film in which a metal nitride film is formed on at least a part of a surface of a substrate to be processed by chemical vapor deposition using a metal compound raw material and a nitrogen-containing compound raw material, wherein the nitrogen-containing compound raw material contains hydrazine and ammonia.

This description relates to a plasma treatment apparatus including a vapor chamber, a gas supply and an upper electrode assembly. The upper electrode assembly includes a gas distribution plate having a plurality of holes in a bottom surface thereof and an upper electrode having at least one gas nozzle and at least one controllable valve connected to the at least one gas nozzle. The plasma treatment apparatus further includes a controller configured to generate a control signal. The at least one controllable valve is configured to be adjusted based on the control signal. A control system and a method of controlling a controllable valve are also described.

A chamber of a hybrid chemical and physical vapor deposition (HybCPVD) provides high-quality and uniform films on relatively large multiple wafers per growth run at reasonably high deposition rates using a scalable high-throughput process. Transition-metal-alloyed III-N single-crystalline and textured thin films are epitaxially and non-epitaxially deposited on a suitable substrate (of, for example, silicon or a metal such as aluminum or titanium) by providing a mixture of various gases in a deposition/growth chamber. The precursors for the chemical reactions include vapor phase of elements of transition metals, vapor phase of chlorides, and vapor phase of hydride. This growth technique provides high growth rate and high-quality epitaxial materials.