The disclosure describes multilayer hard magnetic materials including at least one layer including α″-Fe.sub.16N.sub.2 and at least one layer including α″-Fe.sub.16(N.sub.xZ.sub.1-x).sub.2 or a mixture of α″-Fe.sub.16N.sub.2 and α″-Fe.sub.16Z.sub.2, where Z includes at least one of C, B, or O, and x is a number greater than zero and less than one. The disclosure also describes techniques for forming multilayer hard magnetic materials including at least one layer including α″-Fe.sub.16N.sub.2 and at least one layer including α″-Fe.sub.16(N.sub.xZ.sub.1-x).sub.2 or a mixture of α″-Fe.sub.16N.sub.2 and α″-Fe.sub.16Z.sub.2 using chemical vapor deposition or liquid phase epitaxy.

A controller causes treatment of a substrate with a treating gas by operating an exhaust portion to discharge gas from a treatment space and supplying the treating gas from a treating gas generator to the treatment space. After supplying a dry gas at a treatment flow rate to the treatment space and replacing the gas with the dry gas, the controller carries out a slow leak operation to flow the dry gas from a dry gas supplier in a predetermined direction and to supply the dry gas to a filter in a lower flow rate than the treatment flow rate.

A charge volume configuration for use in delivery of gas to a reactor for processing semiconductor wafers is provided. A charge volume includes a chamber that extends between a proximal end and a distal end. A base connected to the proximal end of the chamber, and the base includes an inlet port and an outlet port. A tube is disposed within the chamber. The tube has a tube diameter that is less than a chamber diameter. The tube has a connection end coupled to the inlet port at the proximal end of the chamber and an output end disposed at the distal end of the chamber.

Gas distribution assemblies are described including an annular body, an upper plate, and a lower plate. The upper plate may define a first plurality of apertures, and the lower plate may define a second and third plurality of apertures. The upper and lower plates may be coupled with one another and the annular body such that the first and second apertures produce channels through the gas distribution assemblies, and a volume is defined between the upper and lower plates.

A vapor phase growth apparatus according to as embodiment includes n reaction chambers, a main gas supply path supplying a process gas to the n reaction chambers, a main mass flow controller controlling a flow rate of the process gas, a branch portion branching the main gas supply path, n sub gas supply paths branched from the main gas supply path at the branch portion, the n sub gas supply paths supplying branched process gases to the n reaction chambers, n first stop valves in the n sub gas supply paths between the branch portion and the n reaction chambers, distances from the n first stop valves to the branch portion are less than distances from the n first stop valves to the n reaction chambers, and n sub mass flow controllers in the n sub gas supply paths between the n first stop valves and the n reaction chambers.

A valve device with a built-in orifice is manufacturable with low-cost. The valve body defines an accommodation recess which opens at the surface of the valve body and contains a valve element therein, a primary flow path and a secondary flow path connected to the accommodation recess, the valve element having a sealing portion for blocking direct communication between the primary flow path and the secondary flow path through the accommodation recess, and a through flow passage for making the primary flow path and the secondary flow path communicate through the valve element, wherein an orifice is formed in the through flow passage.

A line charge volume and methods for use in delivery of gas to a reactor for processing semiconductor wafers is provided. The line charge volume includes a chamber that extends between a first end and a second end, and the first end includes an inlet port and an outlet port. A pressure sensor is integrated with the chamber. The pressure sensor has a measurement side for measuring a deflection of a diaphragm. The diaphragm is directly exposed to an interior of the chamber so that pressure produced by a gas that is provided into the chamber via the inlet port produces a force upon the diaphragm. The measurement side includes electronics for measuring a capacitance value corresponding to the deflection of the diaphragm. The deflection is correlated to a pressure difference, and the pressure difference is equivalent to a pressure volume (Pv) of the chamber.

A gas introduction apparatus according to an embodiment of the present disclosure includes a gas feeding block disposed above a chamber, the gas feeding block comprising a plurality of gas channels disposed therein to supply a gas to the chamber, a valve assembly coupled to one side surface of the gas feeding block, the valve assembly comprising a plurality of valves for selectively opening/closing at least one of the plurality of gas channels, and a gas introduction pipe coupled, at one end thereof, to the valve assembly while communicating with the chamber at the other end thereof. A buffer space is provided at least one of the plurality of gas channels such that the buffer space is disposed adjacent to the gas introduction pipe, to accumulate the gas.

Various embodiments include an apparatus to supply precursor gases to a processing tool. In various examples, the apparatus includes a point-of-use (POU) valve manifold that includes a manifold body to couple to a processing chamber of the processing tool. The manifold body has a multiple precursor-gas outlet ports surrounded by an annulus. A purge-gas outlet port of the manifold body is directed substantially toward interior walls of the annulus. For each of multiple precursor gases, the POU-valve manifold further includes: a first valve coupled to the manifold body and a divert valve coupled to the first valve. The first valve can be coupled to a precursor-gas supply and has a separate precursor-gas flow path internal to the manifold body. The divert valve diverts the precursor gas during a period when the precursor gas is not to be directed into the processing chamber by the first valve. Other examples are disclosed.

A gas supply system for supplying a gas into a processing chamber for processing a substrate to be processed includes: a processing gas supply unit; a processing gas supply line; a first and a second branch line; a branch flow control unit; an additional gas supply unit; an additional gas supply line; and a control unit. The control unit performs, before processing the substrate to be processed, a processing gas supply control and an additional gas supply control by using the processing gas supply unit and the additional gas supply unit, respectively, wherein the additional gas supply control includes a control that supplies the additional gas at an initial flow rate greater than a set flow rate and then at the set flow rate after a lapse of a period of time.