A flow rate control device 100 includes a flow rate control valve 8 having a valve element 8a and a piezoelectric element 8b for moving the valve element, and a control circuit 9 for controlling an operation of the flow rate control valve 8, wherein, in order to perform a pulsed fluid supply, the control circuit 9 is configured so as to open-loop control an applied voltage to the piezoelectric element so that it approaches the target voltage after once applying a voltage V1 exceeding a target voltage V0 corresponding to a target displacement of the piezoelectric element, when a pulsed flow rate setting signal is given.

Disclosed are an apparatus and method of manufacturing an oxide film having a uniform composition and thickness. The apparatus includes a lower chamber including a reaction space, a susceptor to support a substrate, a chamber lid including gas injection ports, a gas distribution module between the chamber lid and the susceptor and connected to the gas injection ports, a first source container module comprising a first source gas having a first vapor pressure, a first carrier gas supply module supplying a first carrier gas to the first source container module, a second source container module comprising a second source gas having a second vapor pressure, a force gas supply module supplying a force gas, and a reactant gas supply module supplying a reactant gas.

According to one aspect of the technique of the present disclosure, there is provided a method of manufacturing a semiconductor device, including: (A) creating a recipe by setting opening/closing states of a plurality of valves on a gas pattern screen; and (B) processing a substrate by performing the recipe created in (A), wherein (A) includes: (a) selecting a gas pipe on the gas pattern screen when an opening/closing state of any valve among the plurality of valves changes on the gas pattern screen; and (b) confirming opening/closing states of one or more valves connected to the gas pipe selected in (a).

In a method for evaporating a non-gaseous starting material, the starting material is introduced into an evaporation chamber; an evaporation element heats the starting material to create a vapor; a conveying gas flow transports the vapor through a conveying channel and past a sensor, which measures the concentration or partial pressure of the vapor in the gas flow flowing through the conveying channel; and the mass flow of the vapor through the conveying channel is controlled by varying the conveying gas flow with respect to a setpoint value. To keep the vapor flow largely constant over time, a compensating gas flow is fed into the conveying channel at a mixing point disposed between the evaporator and the sensor. A second mass flow controller controls the mass flow of the compensating gas flow such that, when the conveying gas flow varies, the gas flow flowing past the sensor remains constant.

Provided is processing of a substrate including: forming film on substrate by performing cycle, multiple times, including non-simultaneously performing: (a) supplying precursor gas and inert gas to the substrate; and (b) supplying reaction gas to the substrate. In (a), at least one of the precursor and inert gas stored in first tank is supplied to the substrate, and at least one of the precursor and inert gas stored in second tank is supplied to the substrate. A concentration of the precursor gas in the first tank differs from that in the second tank. Further, in (a), the at least one of the precursor and inert gas is supplied from the first tank to the substrate, and the at least one of the precursor and inert gas is supplied from the second tank to the substrate to suppress multiple adsorption of molecules constituting the precursor gas on the substrate's surface.

A gas supply system includes a first flow channel connected to a first gas source of a first gas, formed inside a ceiling or a sidewall of the treatment container, and communicating with the treatment space through a plurality of first gas discharge holes, a second flow channel connected to a second gas source of a second gas, formed inside the ceiling or the sidewall of the treatment container, and communicating with the treatment space through a plurality of second gas discharge holes, and a plurality of first diaphragm valves, wherein each of the first diaphragm valves is provided between the first flow channel and the first gas discharge hole to correspond to the first gas discharge hole.

A chemical vapor deposition furnace for depositing silicon nitride films is disclosed. The furnace having a process chamber elongated in a substantially vertical direction and a wafer boat for supporting a plurality of wafers in the process chamber. A process gas injector inside the process chamber is provided with a plurality of vertically spaced gas injection holes to provide gas introduced at a feed end in an interior of the process gas injector to the process chamber. A valve system connected to the feed end of the process gas injector is being constructed and arranged to connect a source of a silicon precursor and a nitrogen precursor to the feed end for depositing silicon nitride layers. The valve system may connect the feed end of the process gas injector to a cleaning gas system to provide a cleaning gas to remove silicon nitride from the process gas injector and/or the processing chamber.

An apparatus for forming semiconductor films can include a horizontal flow reactor including an upper portion and a lower portion that are moveably coupled to one another so as to separate from one another in an open position and so as to mate together in a closed position to form a reactor chamber. A central injector column can penetrate through the upper portion of the horizontal flow reactor into the reactor chamber, the central injector column configured to allow metalorganic precursors into the reactor chamber in the closed position. A heated metalorganic precursor line can be coupled to the central injector column and configured to heat a low vapor pressure metalorganic precursor vapor contained in the heated metalorganic precursor line upstream of the central injector column to a temperature range between about 70° C. and 200° C.

A method for depositing protective layers on a surface of a substrate includes conducting a plurality of ALD cycles in a first reaction chamber to deposit a first protective layer on the substrate. Each ALD cycle of the plurality of ALD cycles is conducted at a deposition temperature below about 100° C. and includes delivering a first precursor gas into the first reaction chamber containing the substrate. A reacting portion of the first precursor gas is absorbed onto a surface of the substrate to form a first sub-layer of the protective layer. A second precursor gas is delivered into the first reaction chamber containing the substrate, a reacting portion of the second precursor gas being absorbed onto the surface of the substrate to form a second sub-layer of the protective layer. Metrology analysis is performed on the substrate within a second reaction chamber.

A shower plate that includes a plate-like member provided at a top of a processing chamber is provided. The shower plate has first holes communicating with a first flow path in the shower plate. The shower plate includes first chamber valves provided with the respective first holes. The shower plate has second holes communicating with a second flow path in the shower plate. The shower plate includes second chamber valves provided with the respective second holes. The shower plate has third holes provided in the plate-like member to correspond to the first holes and the second holes. The shower plate includes third chamber valves provided with the respective third holes. The first chamber valves, the second chamber valves, and the third chamber valves are piezoelectric elements.