A deposition apparatus, includes a chamber having at least one first gas inlet therein. A fixed chuck is installed in the chamber and an electrostatic chuck is installed on the fixed chuck. An edge ring is disposed on an edge of the electrostatic chuck. A shower head is disposed above the edge ring. A baffle is disposed above the shower head and an upper electrode is disposed above the baffle. A gas guide member is disposed above the upper electrode so that a flow path provided in the upper electrode and the first gas inlet are connected. The gas guide member has a flow path hole penetrating in upward and downward directions, and a plurality of guide holes are provided on an inner surface of the gas guide member.

A semiconductor processing method for monitor the dose of a precursor from a solid or liquid source that utilize a caner gas and a semiconductor processing system are disclosed. A pressure or mass-flow controller is used to monitor the carrier as flow into the vessel and mass-flow meter is used to measure that total flow out of the vessel. Based on the difference between these two flows, the precursor flow is obtained and a dose of a solid or liquid precursor to a process chamber and a remaining amount in a source vessel is calculated.

A fluid inlet assembly for a substrate processing apparatus includes a fluid inlet pipe configured to pass through a wall of a sealed pressure vessel, a resilient element around the fluid inlet pipe outside the sealed pressure vessel coupling the fluid inlet pipe to the wall, and first and second end parts, the resilient element being coupled therebetween.

An apparatus capable of heating a liquid may provide a valve assembly configured to receive an incoming liquid from a bulk source. The valve assembly may control the flow of the liquid to a source vessel via a pipe system. The pipe system includes a first pipe directly connected to the valve assembly and a second pipe downstream from the first pipe and connected between the first pipe and the source valve. The second pipe is heated with a heating system that surrounds the second pipe, and the second pipe has a larger diameter than that of the first pipe.

A semiconductor manufacturing apparatus according to the present embodiment includes a chamber on which a substrate is placed, a first gas flow path configured to supply a first processing gas into the chamber, a second gas flow path configured to supply a second processing gas into the chamber, a first replacement gas flow path configured to supply a first replacement gas into the chamber, a replacement gas heating unit configured to heat the first replacement gas, a second replacement gas flow path configured to supply a second replacement gas into the chamber, and a replacement gas cooling unit configured to cool the second replacement gas.

A semiconductor manufacturing apparatus includes: a first storage container storing a first raw material and having a first container outlet; a reaction chamber; a first flow rate controller adjusting a flow rate of the first raw material transported from the first container outlet of the first storage container to the reaction chamber and having a first inlet and a first outlet; a first pipe connecting the first container outlet of the first storage container and the first inlet of the first flow rate controller to each other and having a first connection portion; a second pipe connecting the first outlet of the first flow rate controller and the reaction chamber to each other and having a second connection portion having a first flow path switching valve; a third pipe connected to the first pipe at the first connection portion and connected to the second pipe at the second connection portion; a first pump having a first intake port connected to a portion of the third pipe connected to the second connection portion, the first pump having a first exhaust port connected to a portion of the third pipe connected to the first connection portion and the first pump transporting the first raw material from the second pipe to the first pipe; and a second flow rate controller having a second inlet connected to a portion of the third pipe between the first connection portion and the first pump, the second inlet being connected to the first pump, the second flow rate controller having a second outlet connected to a portion of the third pipe between the first connection portion and the first pump, the second outlet being connected to the first connection portion and the second flow rate controller controlling the flow rate of the first raw material supplied from the first pump to the first flow rate controller.

A raw material supply apparatus according to an aspect of the present disclosure includes: a container configured to store a solution of a first solid raw material dissolved in a solvent or a dispersion system of the first solid raw material dispersed in a dispersion medium; a removal part configured to form a second solid raw material by removing the solvent or the dispersion medium from the solution or the dispersion system stored in the container; a detection part configured to detect a completion of a removal of the solvent or the dispersion medium from the solution or the dispersion system; and a heater configured to heat the second solid raw material.

A raw material supply apparatus includes: a container configured to store a solution obtained by dissolving a first solid raw material in a solvent or a dispersion system obtained by dispersing the first solid raw material in a dispersion medium; an injection part configured to spray the solution or the dispersion system to inject the solution or the dispersion system into the container; an exhaust port configured to exhaust an inside of the container; a heating part configured to heat a second solid raw material formed by removing the solvent or the dispersion medium from the solution or the dispersion system; and a deposition part provided between the injection part and the exhaust port in the container and configured to deposit the second solid raw material.

The present disclosure provides a powder-atomic-layer-deposition device with knocker, which mainly includes a vacuum chamber, a shaft seal, a drive unit and a knocker. The drive unit is connected to the rear wall of the vacuum chamber via the shaft seal, for driving the vacuum chamber to rotate. The shaft seal includes an outer tube and an inner tube, wherein the inner tube is disposed within the containing space of the outer tube. The inner tube is disposed with a gas-extracting pipeline and a gas-inlet pipeline therein, wherein the gas-extracting pipeline is for gas extraction of the vacuum chamber, the gas-inlet pipeline is for transferring a precursor gas into the vacuum chamber. The knocker and the vacuum chamber are adjacent to each other, for knocking the vacuum chamber to prevent powders within the reacting space from sticking to the inner surface of the vacuum chamber.

A film forming method for forming a film by heating a mist in a film-forming unit, the method including steps of: atomizing a raw-material solution in an atomizer to generate a mist; conveying the mist with a carrier gas from the atomizer to the film-forming unit through a conveyor that connects the atomizer and the film-forming unit; and heating the mist to form a film on a substrate in the film-forming unit. In this method, a flow rate of the carrier gas and a temperature of the carrier gas are controlled to satisfy 7<T+Q<67, where Q represents the flow rate (L/minute) of the carrier gas, and T represents the temperature (° C.) of the carrier gas. Thus, provided is a film forming method excellent in film forming speed.