Embodiments of the present disclosure generally relate to a processing chamber for conformal oxidation of high aspect ratio structures. The processing chamber includes a chamber body with a first side and a second side opposite the first side, and a flow assembly disposed in the first side. The flow assembly includes a flow divider to direct fluid flow away from a center of a substrate disposed in a processing region of the processing chamber. The flow divider includes a crescent shaped first side, a top, and a bottom. The processing chamber also includes a distributed pumping structure located adjacent to the second side. The flow assembly is designed to reduce flow constriction of the radicals, leading to increased radical concentration and flux.

Embodiments described herein generally relate to a processing chamber having one or more gas inlet ports located at a bottom of the processing chamber. Gas flowing into the processing chamber via the one or more gas inlet ports is directed along a lower side wall of the processing chamber by a plate located over each of the one or more gas inlet ports or by an angled opening of each of the one or more gas inlet ports. The one or more gas inlet ports and the plates may be located at one end of the processing chamber, and the gas flow is directed towards an exhaust port located at the opposite end of the processing chamber by the plates or the angled openings. Thus, more gas can be flowed into the processing chamber without dislodging particles from a lid of the processing chamber.

A gas inlet system for a wafer processing reactor includes a tubular gas manifold conduit adapted to be connected to a gas inlet port of the wafer processing reactor; and gas feeds including a first feed for feeding a first gas into the tubular gas manifold conduit and a second feed for feeding a second gas into the tubular gas manifold conduit. Each feed has two or more injection ports connected to the tubular gas manifold conduit at a first axial position of the tubular gas manifold conduit, and the injection ports of each of the gas feeds are evenly distributed along a circumference of the tubular gas manifold conduit at the first axial position.

The gas jetting apparatus according to the present invention includes a gas jetting cell unit for rectifying a gas and jetting the rectified gas into the film formation apparatus. The gas jetting cell unit has a fan shape internally formed with a gap serving as a gas route. A gas in a gas dispersion supply unit enters from a wider-width side of the fan shape into the gap, and, due to the fan shape, the gas is rectified, accelerated, and output from a narrower-width side of the fan shape into the film formation apparatus.

The present disclosure relates to methods and apparatus for a thin film encapsulation (TFE). In one embodiment a process kit for use in an atomic layer deposition (ALD) chamber is disclosed and includes a dielectric window, a sealing frame, and a mask frame connected with the sealing frame, wherein the mask frame has a gas inlet channel and a gas outlet channel formed therein on opposing sides thereof.

An atomic layer deposition apparatus having a reaction chamber arranged inside a vacuum chamber and a fixed gas manifold assembly fixedly provided to the atomic layer deposition apparatus and arranged to supply gases from outside the vacuum chamber to the reaction chamber. The reaction chamber is a movable reaction chamber which is arranged movable relative to the vacuum chamber and relative to the fixed gas manifold assembly. The atomic layer deposition apparatus further includes a connection arrangement coupling the movable reaction chamber to the fixed gas manifold assembly. The connection arrangement includes a flexible outer flange assembly surrounding the fixed gas manifold assembly, and a first connection surface connecting to a second connection surface of the reaction chamber.

Embodiments of the present disclosure generally relate to a processing chamber for conformal oxidation of high aspect ratio structures. The processing chamber includes a chamber body with a first side and a second side opposite the first side, and a flow assembly disposed in the first side. The flow assembly includes a flow divider to direct fluid flow away from a center of a substrate disposed in a processing region of the processing chamber. The flow divider includes a crescent shaped first side, a top, and a bottom. The processing chamber also includes a distributed pumping structure located adjacent to the second side. The flow assembly is designed to reduce flow constriction of the radicals, leading to increased radical concentration and flux.

Embodiments described herein generally relate to a processing chamber having one or more gas inlet ports located at a bottom of the processing chamber. Gas flowing into the processing chamber via the one or more gas inlet ports is directed along a lower side wall of the processing chamber by a plate located over each of the one or more gas inlet ports or by an angled opening of each of the one or more gas inlet ports. The one or more gas inlet ports and the plates may be located at one end of the processing chamber, and the gas flow is directed towards an exhaust port located at the opposite end of the processing chamber by the plates or the angled openings. Thus, more gas can be flowed into the processing chamber without dislodging particles from a lid of the processing chamber.

A chamber lid assembly includes: a central channel having an upper portion and a lower portion and extending along a central axis; a housing at least partially defining a first and a second annular channel, each fluidly coupled to the central channel; a first plurality of apertures disposed along a horizontal plane through the housing to provide a multi-aperture inlet between the first annular channel and the central channel; a second plurality of apertures disposed along a horizontal plane through the housing to provide a multi-aperture inlet between the second annular channel and the central channel, wherein the first and the second plurality of apertures are angled differently with respect to the central axis so as to induce opposing rotational flow of gases about the central axis; and a tapered bottom surface extending from the lower portion of the central channel to a peripheral portion of the chamber lid assembly.

Embodiments disclosed herein generally relate to a gas distribution assembly for providing improved uniform distribution of processing gases into a semiconductor processing chamber. The gas distribution assembly includes a gas distribution plate, a blocker plate, and a dual zone showerhead. The gas distribution assembly provides for independent center to edge flow zonality, independent two precursor delivery, two precursor mixing via a mixing manifold, and recursive mass flow distribution in the gas distribution plate.