The invention relates to a device for depositing at least one radical chalcogenide thin film on an element to be treated including an intake area (4) and a diffusion area (6) receiving the element (P) to be treated, the intake area (4) and the diffusion area (6) extending along a longitudinal axis (Z), a radical hydrogen source (8) connected to the intake area (4), pumping means (19), means for injecting a reagent reacting with the radical hydrogen to form H2S, and means for supplying a precursor to the diffusion area. The injection means inject the reagent into a central area of the intake area (4) in the longitudinal direction within the radical hydrogen flow. The pumping means (19) are controlled so as to operate during the reagent injection, and generate a flow of H2S along the element to be treated (P) in order to activate said element so as to absorb the precursor.

Embodiments of the present disclosure generally relate to a processing chamber for conformal oxidation of high aspect ratio structures. The processing chamber includes a chamber body with a first side and a second side opposite the first side, and a flow assembly disposed in the first side. The flow assembly includes a flow divider to direct fluid flow away from a center of a substrate disposed in a processing region of the processing chamber. The flow divider includes a crescent shaped first side, a top, and a bottom. The processing chamber also includes a distributed pumping structure located adjacent to the second side. The flow assembly is designed to reduce flow constriction of the radicals, leading to increased radical concentration and flux.

Embodiments described herein relate to apparatus and methods for processing a substrate. In one embodiment, a cluster tool apparatus is provided having a transfer chamber and a pre-clean chamber, a self-assembled monolayer (SAM) deposition chamber, an atomic layer deposition (ALD) chamber, and a post-processing chamber disposed about the transfer chamber. A substrate may be processed by the cluster tool and transferred between the pre-clean chamber, the SAM deposition chamber, the ALD chamber, and the post-processing chamber. Transfer of the substrate between each of the chambers may be facilitated by the transfer chamber which houses a transfer robot.

Gas distribution assemblies are described including an annular body, an upper plate, and a lower plate. The upper plate may define a first plurality of apertures, and the lower plate may define a second and third plurality of apertures. The upper and lower plates may be coupled with one another and the annular body such that the first and second apertures produce channels through the gas distribution assemblies, and a volume is defined between the upper and lower plates.

A reactor system including a gas distribution assembly and method of using the reactor system are disclosed. The gas distribution assembly includes a gas distribution device, a gas expansion area, and a showerhead plate downstream of the gas distribution device and the expansion area.

Embodiments of the device relate to a modular injector (100) for injecting a gas into a processing chamber (42), comprising at least two adjacent injectors (1), each injector comprising an inlet for receiving a gas wave or a gas flow, a flow shaping section (2) having left and right sidewalls that diverge according to a divergence angle relative to a propagation axis of the gas, for expanding the gas in a direction perpendicular to the propagation axis, and an outlet for expelling the gas. The modular injector forms an equivalent large injector having an equivalent large outlet which includes the outlets of the adjacent injectors and expands the gas over the equivalent large outlet.

A method for coating a turbine engine component, said method includes the steps of: placing the component into a chamber; injecting a non-reactive carrier gas containing a coating material into the chamber; and forming a coating on a desired portion of the component by locally heating the desired portion of the component by redirecting a directed energy beam onto the desired portion of the component.

A method for cleaning a chamber of a substrate processing system includes maintaining the chamber at a first predetermined pressure and, without a substrate present within the chamber, providing, from a fluid source via a nozzle assembly, a fluid, and injecting the fluid into the chamber via the nozzle assembly. The fluid source is maintained at a second predetermined pressure that is greater than the first predetermined pressure. Injecting the fluid into the chamber maintained at the first predetermined pressure causes the fluid to aerosolize into a mixture of gas and solid particles.

The present disclosure relates to methods and apparatus for a thin film encapsulation (TFE). In one embodiment a process kit for use in an atomic layer deposition (ALD) chamber is disclosed and includes a dielectric window, a sealing frame, and a mask frame connected with the sealing frame, wherein the mask frame has a gas inlet channel and a gas outlet channel formed therein on opposing sides thereof.

Gas distribution assemblies are described including an annular body, an upper plate, and a lower plate. The upper plate may define a first plurality of apertures, and the lower plate may define a second and third plurality of apertures. The upper and lower plates may be coupled with one another and the annular body such that the first and second apertures produce channels through the gas distribution assemblies, and a volume is defined between the upper and lower plates.