The present invention discloses methods for extracting and recycling hydrogen in an MOCVD process by FTrPSA. Through pretreatment, fine deamination, PSA hydrogen extraction, deep dehydration and hydrogen purification procedures, ammonia-containing waste hydrogen from an MOCVD process is purified to meet the electronic-level hydrogen (the purity is greater than or equal to 99.99999% v/v) standard required by the MOCVD process, to implement resource reuse of exhaust gases, where the hydrogen yield is greater than or equal to 75-86%. The present invention solves the technical problem that atmospheric-pressure or low-pressure waste hydrogen from MOCVD processes cannot be returned to the MOCVD processes for use after being recycled, and fills the gap in green and circular economy development of the LED industry.

The present invention discloses methods for extracting and recycling ammonia in MOCVD processes by FTrPSA. Through pretreatment, medium-shallow temperature PSA concentration, condensation and freezing, liquid ammonia vaporization, PSA ammonia extraction, and ammonia gas purification procedures, ammonia-containing exhaust gases from MOCVD processes are purified to meet the electronic-level ammonia gas standard required by the MOCVD processes, so as to implement recycling and reuse of the exhaust gases, where the ammonia gas yield is greater than or equal to 70-85%. The present invention solves the technical problem that atmospheric-pressure or low-pressure ammonia-containing exhaust gases in MOCVD processes cannot be returned to the MOCVD processes for use after being recycled, and fills the gap in green and circular economy development of the LED industry.

Internally cooled multi-hole injectors to deliver process chemicals are provided. An internal channel in an injector for the delivery system delivers process chemicals, such as a gas precursor, to a reaction space or substrate within a process chamber through multiple holes formed by outlets. A cooling delivery path and a cooling return path for cooling chemicals are positioned adjacent the supply channel to cool the process chemicals internally within the injector. The cooling process can be controlled to achieve a target cooling level for the process chemicals within the channel. In operation, undesired deposits are reduced thereby extending the time between product maintenance cycles. Further, the delivery and return flow of the cooling chemicals helps to stimulate a more evenly distributed temperature for the supply channel. Still further, the disclosed embodiments can be used in high-temperature environments, such as above about 400 degrees Celsius.

Embodiments of the disclosed subject matter provide a device that may have a first depositor that includes one or more delivery apertures surrounded by one or more exhaust apertures, where the one or more delivery apertures and the one or more exhaust apertures are enclosed within a perimeter of a boss that protrudes from a substrate-facing side of the one or more delivery apertures. The delivery channels for the one or more delivery apertures and exhaust channels for the one or more exhaust apertures may be routed orthogonally to each other. The one or more delivery apertures may be configured to permit jets of delivery gas pass through a lower surface of the first depositor. The lower surface of the first depositor may include the one or more exhaust apertures to remove surplus vapor from a delivery zone. Embodiments may also provide a method of forming a print head.

Systems and methods for supplying a precursor material for an atomic layer deposition (ALD) process are provided. A gas supply provides one or more precursor materials to a deposition chamber. The deposition chamber receives the one or more precursor materials via an input line. A gas circulation system is coupled to an output line of the deposition chamber. The gas circulation system includes a gas composition detection system configured to produce an output signal indicating a composition of a gas exiting the deposition chamber through the output line. The gas circulation system also includes a circulation line configured to transport the gas exiting the deposition chamber to the input line. A controller is coupled to the gas supply. The controller controls the providing of the one or more precursor materials by the gas supply based on the output signal of the gas composition detection system.

Provided are a hydrogen recycle system and a hydrogen recycle method, whereby hydrogen can be purified to high purity at high yield from a gas, said gas being exhausted from a nitride compound production device, and recycled. The hydrogen recycle system comprises an exhaust gas supply path supplying a gas exhausted from a nitride compound production device, a hydrogen recycle means and a hydrogen supply path. The hydrogen recycle means of the hydrogen recycle system is characterized by comprising: a plasma reaction vessel that defines at least a part of a discharge space; a hydrogen separation membrane that divides the discharge space from a hydrogen flow path communicated with the hydrogen supply path, defines at least a part of the discharge space by one surface thereof and also defines at least a part of the hydrogen flow path by the other surface thereof; an electrode that is disposed outside the discharge space; and an adsorbent that is filled in the discharge space and adsorbs the supplied exhaust gas.

A method for the continuous vapour deposition of silicon on substrates, including the following steps: a) introducing at least one substrate into a reaction chamber; b) introducing a process gas and at least one gaseous silicon precursor compound into the reaction chamber; c) forming a gaseous mixture of at least one silicon-based intermediate product coexisting with the gaseous silicon precursor compound and the process gas; d) forming a silicon layer by vapour deposition of silicon from the gaseous silicon precursor compound and/or the silicon-based intermediate product on the substrate; e) discharging an excess of the gaseous mixture from the reaction chamber; f) returning at least one of the constituents of the excess of the gaseous mixture, selected from the silicon precursor compound, the silicon-based intermediate product and/or the process gas into the reaction chamber, wherein introducing the gaseous silicon precursor compound into the reaction chamber is regulated such that the molar ratio of the silicon-based intermediate product to the silicon precursor compound has a value of 0.2:0.8 to 0.5:0.5.

Embodiments of the disclosed subject matter provide a device that may have a first depositor that includes one or more delivery apertures surrounded by one or more exhaust apertures, where the one or more delivery apertures and the one or more exhaust apertures are enclosed within a perimeter of a boss that protrudes from a substrate-facing side of the one or more delivery apertures. The delivery channels for the one or more delivery apertures and exhaust channels for the one or more exhaust apertures may be routed orthogonally to each other. The one or more delivery apertures may be configured to permit jets of delivery gas pass through a lower surface of the first depositor. The lower surface of the first depositor may include the one or more exhaust apertures to remove surplus vapor from a delivery zone. Embodiments may also provide a method of forming a print head.

A method and an apparatus including a nozzle head having an output face and including at least one precursor nozzle including a supply channel and at least one discharge nozzle including a discharge channel. The apparatus further including a supply line in a fluid communication with the supply channel of the precursor nozzle; and a discharge line in a fluid communication with the discharge channel of the discharge nozzle. The discharge line is connected to the supply line for circulating precursor in the nozzle head by returning at least part of the discharge flow from the output face of the nozzle head via the discharge channel of the discharge nozzle to the supply channel of the precursor nozzle.

Embodiments are described for internally cooled multi-hole injectors to deliver process chemicals. An internal channel in an injector for the delivery system delivers process chemicals, such as a gas precursor, to a reaction space or substrate within a process chamber through multiple holes formed by outlets. A cooling delivery path and a cooling return path for cooling chemicals are positioned adjacent the supply channel to cool the process chemicals internally within the injector. The cooling process can be controlled to achieve a target cooling level for the process chemicals within the channel. In operation, undesired deposits are reduced thereby extending the time between product maintenance cycles. Further, the delivery and return flow of the cooling chemicals helps to stimulate a more evenly distributed temperature for the supply channel. Still further, the disclosed embodiments can be used in high-temperature environments, such as above about 400 degrees Celsius.