Provided are a hydrogen recycle system and a hydrogen recycle method, whereby hydrogen can be purified to high purity at high yield from a gas, said gas being exhausted from a nitride compound production device, and recycled. The hydrogen recycle system comprises an exhaust gas supply path supplying a gas exhausted from a nitride compound production device, a hydrogen recycle means and a hydrogen supply path. The hydrogen recycle means of the hydrogen recycle system is characterized by comprising: a plasma reaction vessel that defines at least a part of a discharge space; a hydrogen separation membrane that divides the discharge space from a hydrogen flow path communicated with the hydrogen supply path, defines at least a part of the discharge space by one surface thereof and also defines at least a part of the hydrogen flow path by the other surface thereof; an electrode that is disposed outside the discharge space; and an adsorbent that is filled in the discharge space and adsorbs the supplied exhaust gas.

Provided are a hydrogen recycle system and a hydrogen recycle method, whereby hydrogen can be purified to high purity at high yield from a gas, said gas being exhausted from a nitride compound production device, and recycled. The hydrogen recycle system 1 comprises an exhaust gas supply path 11 supplying a gas exhausted from a nitride compound production device 2, a hydrogen recycle means 10 and a hydrogen supply path 12. The hydrogen recycle means 10 of the hydrogen recycle system 1 is characterized by comprising: a plasma reaction vessel 31 that defines at least a part of a discharge space 32; a hydrogen separation membrane 34 that divides the discharge space 32 from a hydrogen flow path 33 communicated with the hydrogen supply path 12, defines at least a part of the discharge space 32 by one surface thereof and also defines at least a part of the hydrogen flow path 33 by the other surface thereof; an electrode 35 that is disposed outside the discharge space 32; and an adsorbent 36 that is filled in the discharge space 32 and adsorbs the supplied exhaust gas.

The present invention relates to a process for producing of polycrystalline silicon, and the method includes (1) preparing a silicon-containing gas; (2) storing the silicon-containing gas in a storage tank; (3) depositing polycrystalline silicon by injecting the silicon-containing gas stored in the storage tank to a CVD reactor; (4) treating an off-gas emitted in the depositing step; and (5) injecting the gas treated in the treating step to the storage tank.

This facility comprises a support (1) for the substrate, a pressing roll (2), capable of pressing the substrate against said support, a treatment unit positioned downstream of the pressing roll, with reference to the direction of travel of the substrate, said unit comprising injection means (37) for injecting a treatment gas towards said support and means (8) for transforming the surface of the moving substrate. According to the invention, this facility further comprises a containment cover (4) open in the direction of the support, this cover and this support defining an inner volume in which said treatment unit is received, this cover comprising a front wall called the upstream wall (42), facing towards said pressing roll, wherein the smallest distance (d2) between the end edge (42) of said upstream front wall and the pressing roll, the smallest distance (d3) between said upstream front wall (42) and the treatment unit and the smallest distance (d1) between the upstream end (39) of the treatment unit and the support (1), are such that they define a recirculation volume (VR) for the treatment gas, defined by the end edge of said upstream front wall, the pressing roll, the support and the upstream end of the treatment unit.

The present invention relates to a coating apparatus (also called coating tunnel or coating hood) for applying a protective coating to hollow glass containers. In particular, it relates to a coating apparatus with the re-use of the coating material containing exhaust from the end of the coating tunnel for applying the protective coatings to glass containers. More particularly, the present invention relates to a coating apparatus with a specific partial separation of the carrier gas flow of one loop into two respective loops.

A novel new method for rapidly and efficiently depositing carbon on and within or densifying carbon fiber preforms, porous substrates and close packed particulates by pyrolitic carbon in the structures of isotropic, anisotropic, graphitic, amorphous, lonsdaleite, and diamond.

Semiconductor manufacturing processing chambers with recycling capability and methods of recycling a chemical precursor are described. The processing chamber comprises a chamber body with a substrate support. The substrate support is spaced form the chamber lid to create a process region. A gas inlet provides a flow of gas to the process region and a recirculation plenum is in fluid communication with the process region. At least one fast-acting valve is connected to the recirculation plenum with a recirculation inlet line. A recirculation housing is in fluid communication with the recirculation inlet line and a recirculation outlet line. A recirculation piston valve allows a gas within the process chamber to be recycled into the original precursor container or into a different container for reuse.

A system for chemical vapor infiltration and densification may comprise a reaction chamber and a plurality of conduits fluidly coupled to an exhaust outlet of the reaction chamber. A first set of conduits of the plurality of conduits may define a first flow path and a second set of conduits of the plurality of conduits may define a second flow path. The second flow path may be fluidly coupled to an inlet of the reaction chamber. A hydrogen extraction component may be in fluid communication with a least one of the first set of conduits or the second set of conduits.

A method and system is provided to improve precursor utilization in pulsed atomic layer processes. The system integrates a chiller with a precursor ampoule to lower the temperature of the precursor ampoule, and thereby reduce the precursor vapor pressure. By lowering the ampoule temperature, the loss of excess unreacted precursor molecules is reduced, in order to improve precursor utilization efficiency in atomic layer processes.

A substrate processing apparatus including a vertical reaction container; an insulating wall formed of an insulating material and including a reaction container accommodation chamber for accommodating the reaction container therein; a heater installed in an inner wall of the reception container reception chamber on the insulating wall; an air circulation channel installed vertically in a sidewall of the insulating wall; a blower for distributing air upward or downward in the air circulation channel; intake valves for communicating the air circulation channel with the air; and exhaust valves for communicating the air circulation channel with an equipment exhaust system. In a temperature elevating process and a temperature lowering process, the intake valves and the exhaust valves are switched.