A semiconductor device and a method and tool for film deposition are provided. The method of film deposition includes holding a semiconductor device in a chamber by a holding component, wherein the chamber is defined by a showerhead and a pedestal, providing reacting gases by the showerhead from a bottom side of the chamber, and forming a first dielectric layer on a backside surface of the semiconductor device.

Provided herein are methods and apparatuses for controlling uniformity of processing at an edge region of a semiconductor wafer. In some embodiments, the methods include providing a backside inhibition gas as part of a deposition-inhibition-deposition (DID) sequence.

A method and a tool for film deposition are provided. The method of film deposition includes holding a semiconductor device in a chamber by a holding component, wherein the chamber is defined by a showerhead and a pedestal, providing reacting gases by the showerhead from a bottom side of the chamber, and forming a first dielectric layer on a backside surface of the semiconductor device.

An electronic chip including a semiconductor substrate in and on which an integrated circuit is formed at least one connection metallization of the integrated circuit formed on the side of a front face of the semiconductor substrate and a first passivation layer covering the front face of the semiconductor substrate, the first passivation layer including openings in line with the connection metallization of the integrated circuit The chip having a second passivation layer covering the side flanks of the semiconductor substrate, the second passivation layer being made of a parylene, and the first passivation layer and the second passivation layer being in contact with each other on the side of the front face of the semiconductor substrate. Methods of making a device are also provided.

A substrate processing apparatus may include: a first showerhead that includes a first area, a second area, and a boundary area; a first gas supply configured to provide a first gas through the first area to the substrate, wherein the first gas is configured to form a tensile stress film; a second gas supply configured to provide a second gas through the second area to the substrate, wherein the second gas is configured to form a compressive stress film; a first purge gas supply configured to provide a first purge gas through the boundary area to the substrate; an exhaust configured to exhaust the first gas, the second gas, and the first purge gas through the boundary area; and a controller configured to perform control such that a supply of and the exhaust of the first gas, the second gas, and the first purge gas are simultaneously performed.